Patents by Inventor Chung-Han Wu

Chung-Han Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240385463
    Abstract: An optical engine module including a display panel, a transflective layer, a polarizing reflective layer, a first bifocal lens, a first and second electrically controlled half waveplate is provided. The transflective layer is disposed between the display panel and the polarizing reflective layer. The polarizing reflective layer is configured to allow the light beam having a first polarization state to pass through, and reflect the light beam having a second polarization state. The first and second electrically controlled half waveplate are disposed between the transflective layer and the polarizing reflective layer. The first bifocal lens disposed between the first and second electrically controlled half waveplate has a first focal length for the light beam with the first polarization state, and has a second focal length for the light beam with the second polarization state.
    Type: Application
    Filed: May 15, 2024
    Publication date: November 21, 2024
    Applicant: Coretronic Corporation
    Inventors: Tzu-Hung Lin, Chung-Yang Fang, Wen-Chun Wang, Ching-Chuan Wei, Bo-Han Cheng, Wei-Ting Wu
  • Publication number: 20240379437
    Abstract: A semiconductor structure includes a first metallization feature, a first dielectric structure over the first metallization feature, a second metallization feature embedded in the first dielectric structure, a via structure between the first metallization feature and the second metallization feature, and a first insulating layer between the first dielectric structure and the first metallization feature, and between the first dielectric structure and the via structure. The first metallization feature extends along a first direction, and the second metallization feature extends along a second direction different from the first direction. The first insulating layer covers first sidewalls of the via structure along the second direction.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 14, 2024
    Inventors: HWEI-JAY CHU, CHIEH-HAN WU, CHENG-HSIUNG TSAI, CHUNG-JU LEE
  • Publication number: 20240374944
    Abstract: A battery module capable of suppressing spread of battery fire including a case, a plurality of battery packs, a plurality of temperature sensors, an energy consumption module and a controller. The case forms an accommodation space, and the battery packs is accommodated in the accommodation space. The temperature sensors are dispersedly configured to the accommodation space, and the temperature sensors respectively detect an ambient temperature around configure locations. The controller is coupled to the temperature sensors, and when the ambient temperature detected by one of the temperature sensors is greater than or equal to a first specific temperature range, the controller controls the energy consumption module to consume a battery capacity of at least one battery pack around the one of the temperature sensors.
    Type: Application
    Filed: May 12, 2023
    Publication date: November 14, 2024
    Inventors: Chung-Hsing CHANG, Wen-Yi CHEN, Way-Lung WU, Teng-Chi HUANG, Shi-Cheng TONG, Yong-Han CHEN, Yu-Chun WANG
  • Publication number: 20240379448
    Abstract: A method includes forming a gate dielectric on a semiconductor region, depositing a work-function layer over the gate dielectric, depositing a silicon layer over the work-function layer, and depositing a glue layer over the silicon layer. The work-function layer, the silicon layer, and the glue layer are in-situ deposited. The method further includes depositing a filling-metal over the glue layer; and performing a planarization process, wherein remaining portions of the glue layer, the silicon layer, and the work-function layer form portions of a gate electrode.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 14, 2024
    Inventors: Hsin-Han Tsai, Chung-Chiang Wu, Cheng-Lung Hung, Weng Chang, Chi On Chui
  • Publication number: 20240367002
    Abstract: The present invention discloses a sports and health cloud analysis system including a cloud server with an intelligent analysis module, a big data database is coupled to the cloud server, a wearable sensing module is coupled to a mobile device for collecting at least heart sound, ECG, lung sounds, blood pressure, blood glucose level and blood oxygen saturation level information; an insole-type sensing module is used to collect at least foot information, which is connected to the mobile device. The sensing module performs at least one of exercise sensing, foot, exercise, ankle exercise, knee exercise, hand exercise. The collected information is analyzed by an intelligent analysis module to obtain data for evaluating the health status and exercise intensity.
    Type: Application
    Filed: June 16, 2023
    Publication date: November 7, 2024
    Inventors: Yao-Sheng CHOU, Chung-Yuan WU, Yen-Han CHOU
  • Publication number: 20240363424
    Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.
    Type: Application
    Filed: July 11, 2024
    Publication date: October 31, 2024
    Inventors: Chung-Chiang Wu, Hsin-Han Tsai, Wei-Chin Lee, Chia-Ching Lee, Hung-Chin Chung, Cheng-Lung Hung, Da-Yuan Lee
  • Publication number: 20240339396
    Abstract: Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewall of the conductive etch stop layer, and a sidewall of the contact via.
    Type: Application
    Filed: June 17, 2024
    Publication date: October 10, 2024
    Inventors: Chieh-Han Wu, Cheng-Hsiung Tsai, Chih Wei Lu, Chung-Ju Lee
  • Patent number: 12094554
    Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.
    Type: Grant
    Filed: October 5, 2022
    Date of Patent: September 17, 2024
    Assignee: MACRONIX International Co., Ltds.
    Inventors: Chung-Han Wu, Che-Wei Liang, Chih-He Chiang, Shang-Chi Yang
  • Patent number: 12087637
    Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: September 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Chiang Wu, Hsin-Han Tsai, Wei-Chin Lee, Chia-Ching Lee, Hung-Chin Chung, Cheng-Lung Hung, Da-Yuan Lee
  • Patent number: 12046551
    Abstract: Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewall of the conductive etch stop layer, and a sidewall of the contact via.
    Type: Grant
    Filed: April 17, 2023
    Date of Patent: July 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh-Han Wu, Cheng-Hsiung Tsai, Chih Wei Lu, Chung-Ju Lee
  • Publication number: 20240237953
    Abstract: Disclosed is a method for collecting and presenting physiological signal data and location information, comprising: receiving physiological signal data; providing a first user interface to receive a first user input, the first user interface including a first representation of human body or a part thereof, and the first user input including a first location of the first representation; converting the first location to a first location information according to a predetermined first mapping relationship; storing the physiological signal data in association with an identification of the first location information; and in response to a request, providing a second user interface, the second user interface including a selection function, which provides a second representation corresponding to the first representation, wherein when a second location in the second representation corresponding to the first location information is selected, the second user interface presents the physiological signal data.
    Type: Application
    Filed: October 12, 2022
    Publication date: July 18, 2024
    Applicant: SyncVision Technology Corporation
    Inventors: Kuan Hsien CHEN, Chia Hung WU, Chung Han LIU
  • Patent number: 12040235
    Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ching Lee, Hsin-Han Tsai, Shih-Hang Chiu, Tsung-Ta Tang, Chung-Chiang Wu, Hung-Chin Chung, Hsien-Ming Lee, Da-Yuan Lee, Jian-Hao Chen, Chien-Hao Chen, Kuo-Feng Yu, Chia-Wei Chen, Chih-Yu Hsu
  • Publication number: 20240120018
    Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 11, 2024
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Chung-Han Wu, Che-Wei Liang, Chih-He Chiang, Shang-Chi Yang
  • Patent number: 11711980
    Abstract: A fluid actuator includes an actuating portion, a piezoelectric unit, a conduction unit, and a levelness regulating portion. The actuating portion includes a first actuating area, a second actuating area, and at least one connecting section between the two actuating areas. The piezoelectric unit includes a first signal area and a second signal area. The two signal areas are provided in the same plane and are isolated from each other by an isolating portion. The piezoelectric unit corresponds in position to the first actuating area of the actuating portion. The conduction unit includes a first electrode and a second electrode. The first signal area of the piezoelectric unit is electrically connected to the first electrode, and the second signal area of the piezoelectric unit to the second electrode. The levelness regulating portion, the piezoelectric unit, and the conduction unit are located on the same side of the actuating portion.
    Type: Grant
    Filed: November 4, 2020
    Date of Patent: July 25, 2023
    Assignee: KOGE MICRO TECH CO., LTD.
    Inventors: Chung-Han Wu, Hsin-Cheng Wang
  • Patent number: 11585337
    Abstract: A fluid driving device includes a vibration unit, a signal transmission layer, a piezoelectric element, and a plane unit. The signal transmission layer includes a first conductive zone and a second conductive zone. The piezoelectric element includes a first electrode and a second electrode electrically isolated from each other. The first electrode of the piezoelectric element is electrically connected to the first conductive zone of the signal transmission layer, and the second electrode of the piezoelectric element is electrically connected to the second conductive zone of the signal transmission layer. The plane unit has at least one hole. The signal transmission layer, the piezoelectric element, and the plane unit are located at one side of the vibration unit and sequentially stacked with each other.
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: February 21, 2023
    Assignee: KOGE MICRO TECH CO., LTD.
    Inventors: Chung-Han Wu, Jun-Yan Huang, Hsin-Cheng Wang
  • Patent number: 11549501
    Abstract: A fluid driving system includes a vibration unit, a piezoelectric element, a signal transmission layer, a plane unit, and a protrusion. The piezoelectric element includes a first electrode and a second electrode electrically isolated from each other. The signal transmission layer includes a first conductive zone and a second conductive zone. The first electrode of the piezoelectric element is electrically connected to the first conductive zone of the signal transmission layer, and the second electrode of the piezoelectric element is electrically connected to the second conductive zone of the signal transmission layer. The plane unit has at least one hole. The piezoelectric element, the signal transmission layer, and the plane unit are located at one side of the vibration unit. The protrusion is located between the vibration unit and the plane unit, and the protrusion corresponds to and protrudes toward the at least one hole.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: January 10, 2023
    Assignee: KOGE MICRO TECH CO., LTD.
    Inventors: Chung-Han Wu, Jun-Yan Huang, Hsin-Cheng Wang
  • Publication number: 20220406987
    Abstract: An actuating device includes an actuator and a stationary portion. The actuator has at least one driving portion. The stationary portion is provided at an arbitrary position along the actuator such that the driving portion forms a first driving portion and a second driving portion. The first driving portion and the second driving portion can be provided with the same actuating ability or with different actuating abilities respectively by adjusting the position of the stationary portion.
    Type: Application
    Filed: January 12, 2022
    Publication date: December 22, 2022
    Inventor: Chung-Han WU
  • Patent number: 11441553
    Abstract: A piezoelectric driving device includes a vibration unit, a piezoelectric element, a signal transmission layer, and a plane unit. The piezoelectric element includes a first electrode and a second electrode electrically isolated from each other. The signal transmission layer includes a first conductive zone and a second conductive zone. The first electrode of the piezoelectric element is electrically connected to the first conductive zone of the signal transmission layer, and the second electrode of the piezoelectric element is electrically connected to the second conductive zone of the signal transmission layer. The plane unit has at least one hole. The piezoelectric element, the signal transmission layer, and the plane unit are located at one side of the vibration unit and are sequentially stacked together.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: September 13, 2022
    Assignee: KOGE MICRO TECH CO., LTD.
    Inventors: Chung-Han Wu, Jun-Yan Huang, Hsin-Cheng Wang
  • Publication number: 20220074403
    Abstract: A fluid driving device includes a vibration unit, a signal transmission layer, a piezoelectric element, and a plane unit. The signal transmission layer includes a first conductive zone and a second conductive zone. The piezoelectric element includes a first electrode and a second electrode electrically isolated from each other. The first electrode of the piezoelectric element is electrically connected to the first conductive zone of the signal transmission layer, and the second electrode of the piezoelectric element is electrically connected to the second conductive zone of the signal transmission layer. The plane unit has at least one hole. The signal transmission layer, the piezoelectric element, and the plane unit are located at one side of the vibration unit and sequentially stacked with each other.
    Type: Application
    Filed: November 15, 2021
    Publication date: March 10, 2022
    Inventors: Chung-Han WU, Jun-Yan Huang, Hsin-Cheng WANG
  • Patent number: 11248597
    Abstract: A fluid driving device includes a vibration unit, a signal transmission layer, a piezoelectric element, and a plane unit. The signal transmission layer includes a first conductive zone and a second conductive zone. The piezoelectric element includes a first electrode and a second electrode electrically isolated from each other. The first electrode of the piezoelectric element is electrically connected to the first conductive zone of the signal transmission layer, and the second electrode of the piezoelectric element is electrically connected to the second conductive zone of the signal transmission layer. The plane unit has at least one hole. The signal transmission layer, the piezoelectric element, and the plane unit are located at one side of the vibration unit and sequentially stacked with each other.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: February 15, 2022
    Assignee: KOGE MICRO TECH CO., LTD.
    Inventors: Chung-Han Wu, Jun-Yan Huang, Hsin-Cheng Wang