Abstract: A method of fabricating a semiconductor device includes providing a first fin extending from a substrate. In some embodiments, the method further includes forming a first gate stack over the first fin. In various examples, the method further includes forming a first doped layer along a surface of the first fin including beneath the first gate stack. In some cases, a first dopant species of the first doped layer is of a same polarity as a second dopant species of a source/drain feature of the semiconductor device.

Abstract: A semiconductor device includes a first gate stack structure over a substrate, a source/drain epitaxial layer, a lightly doped region, and a silicide region. The source/drain epitaxial layer is disposed in the substrate and adjacent to the first gate stack structure. The lightly doped region is located in the substrate to be electrically connected to the source/drain epitaxial layer. The lightly doped region includes a first portion protrudes from a sidewall of the source/drain epitaxial layer. The silicide region is in contact with a top surface and sidewalls of a top portion of the source/drain epitaxial layer and a top surface of the first portion of the lightly doped region. The top portion of the source/drain epitaxial layer is higher than the top surface of the first portion of the lightly doped region.

Abstract: A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.

Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Abstract: A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantation cycles in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Abstract: A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.

Abstract: A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantation cycles in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

Abstract: Provided is a semiconductor device including a substrate having a first conductivity type; an isolation structure disposed in the substrate to form an active region in the substrate; a well region having the first conductivity type, extending from an inner sidewall of the isolation structure into the active region, wherein a portion of the substrate is surrounded by the well region to form a native region in the active region; a gate structure disposed over the active region; and doped regions having a second conductivity type, disposed respectively in the active region at two sides of the gate structure, wherein a portion of the native region is sandwiched between the doped regions to form a channel region below the gate structure, and a doping concentration of the channel region is substantially equal to a doping concentration of the substrate.

Abstract: A method of fabricating a semiconductor device includes at least the following steps is provided. A first metal layer is formed on a substrate. A first dielectric layer is formed on the substrate. The first dielectric layer is patterned, thereby forming a first opening exposing the first metal layer. A second metal layer is formed on the first dielectric layer and filling into the first opening. The second metal layer is patterned, thereby forming a metal pad. A second dielectric layer is formed on the first dielectric layer and the metal pad. The second dielectric layer is patterned, thereby forming a second opening exposing the metal pad. A first annealing process is performed in an atmosphere of a gas including 50 vol % to 100 vol % of hydrogen.

Abstract: A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantations in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

Abstract: The present disclosure provides a semiconductor device, including a substrate, a fin over the substrate, wherein the fin extends along a primary direction, a gate over the fin, the gate extends along the secondary direction orthogonal to the primary direction, a first conductive contact over the gate, and a conductive routing layer over the first conductive contact, wherein at least a portion of the fin is free from the coverage of a vertical projection of the conductive routing layer.

Abstract: A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal layer, and a semiconductor layer. The metal layer is disposed on the gate dielectric layer. The semiconductor layer is disposed on the gate dielectric layer. The metal layer surrounds the semiconductor layer.

Abstract: A semiconductor device and method of forming the same are provided. The semiconductor device includes a substrate, a growth promoting region, a first gate stack, and a second gate stack. The substrate includes a first region and a second region. The growth promoting region is located in a surface of the substrate in the first region. The growth promoting region includes a first implantation species, and a surface of the substrate in the second region is free of the first implantation species. The first gate stack includes a first gate dielectric layer on the substrate in the first region. The second gate stack includes a second gate dielectric layer on the substrate in the second region.

Abstract: The present disclosure provides a semiconductor device, including a substrate, a fin over the substrate, wherein the fin extends along a primary direction, a gate over the fin, the gate extends along the secondary direction orthogonal to the primary direction, a first conductive contact over the gate, and a conductive routing layer over the first conductive contact, wherein at least a portion of the fin is free from the coverage of a vertical projection of the conductive routing layer.

Abstract: A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantations in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a gate stack, a first doped region, a second doped region, and a buried doped region. The first doped region has a first conductivity type and is located in the substrate at a first side of the gate stack. The second doped region has the first conductivity type and is located in the substrate at a second side of the gate stack. The buried doped region has the first conductivity type and is buried in the substrate, extended from the first doped region to the second doped region, and separated from the gate stack by a distance.

Abstract: A method of fabricating a semiconductor device includes at least the following steps is provided. A first metal layer is formed on a substrate. A first dielectric layer is formed on the substrate. The first dielectric layer is patterned, thereby forming a first opening exposing the first metal layer. A second metal layer is formed on the first dielectric layer and filling into the first opening. The second metal layer is patterned, thereby forming a metal pad. A second dielectric layer is formed on the first dielectric layer and the metal pad. The second dielectric layer is patterned, thereby forming a second opening exposing the metal pad. A first annealing process is performed in an atmosphere of a gas including 50 vol % to 100 vol % of hydrogen.

Abstract: Provided is a semiconductor device including a substrate having a first conductivity type; an isolation structure disposed in the substrate to form an active region in the substrate; a well region having the first conductivity type, extending from an inner sidewall of the isolation structure into the active region, wherein a portion of the substrate is surrounded by the well region to form a native region in the active region; a gate structure disposed over the active region; and doped regions having a second conductivity type, disposed respectively in the active region at two sides of the gate structure, wherein a portion of the native region is sandwiched between the doped regions to form a channel region below the gate structure, and a doping concentration of the channel region is substantially equal to a doping concentration of the substrate.

Abstract: A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal layer, and a semiconductor layer. The metal layer is disposed on the gate dielectric layer. The semiconductor layer is disposed on the gate dielectric layer. The metal layer surrounds the semiconductor layer.