Patents by Inventor Chung-Hsien Wu
Chung-Hsien Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9410236Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.Type: GrantFiled: November 29, 2012Date of Patent: August 9, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Tsai Yen, Chung-Hsien Wu, Shih-Wei Chen, Ying-Hsin Wu, Jui-Fu Hsueh, Kuan-Chu Chen
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Patent number: 9287437Abstract: A method for monitoring the process of fabricating solar cells generally comprises performing a reaction process in a chamber for a solar cell substructure, wherein the chamber includes a reaction solution that includes at least one chemical component. A concentration value is detected for the chemical component during the reaction process, via a detection assembly that is coupled to the chamber. The method further includes determining whether the detected concentration value is at a predefined threshold concentration level or within a predefined concentration range for the chemical component, via a control assembly that is coupled to the detection assembly. The concentration of the chemical component within the reaction solution is modified, during the reaction process, when the detected concentration value is different from the predefined threshold concentration level or different from the predefined concentration range.Type: GrantFiled: February 6, 2014Date of Patent: March 15, 2016Assignee: TSMC Solar Ltd.Inventors: Chung-Hsien Wu, Hung-Yu Chang
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Patent number: 9178103Abstract: A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities.Type: GrantFiled: August 9, 2013Date of Patent: November 3, 2015Assignee: TSMC Solar Ltd.Inventors: Chung-Hsien Wu, Wen-Tsai Yen, Jyh-Lih Wu
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Patent number: 9178088Abstract: A method for fabricating a solar cell generally comprises delivering a solar cell substructure to a chamber. Electromagnetic radiation is generated using a wave generating device that is coupled to the chamber such that the wave generating device is positioned proximate to the solar cell substructure. The electromagnetic radiation is applied onto at least a portion of the solar cell substructure to facilitate the diffusion of at least one metal element through at least a portion of the solar cell substructure such that a semiconductor interface is formed between at least two different types of semiconductor materials of the solar cell substructure.Type: GrantFiled: September 13, 2013Date of Patent: November 3, 2015Assignee: TSMC Solar Ltd.Inventors: Wen-Tsai Yen, Jyh-Lih Wu, Wei-Lun Xu, Chung-Hsien Wu
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Patent number: 9159863Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.Type: GrantFiled: August 15, 2013Date of Patent: October 13, 2015Assignee: TSMC Solar Ltd.Inventors: Chung-Hsien Wu, Wen-Chin Lee
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Publication number: 20150221808Abstract: A method for monitoring the process of fabricating solar cells generally comprises performing a reaction process in a chamber for a solar cell substructure, wherein the chamber includes a reaction solution that includes at least one chemical component. A concentration value is detected for the chemical component during the reaction process, via a detection assembly that is coupled to the chamber. The method further includes determining whether the detected concentration value is at a predefined threshold concentration level or within a predefined concentration range for the chemical component, via a control assembly that is coupled to the detection assembly. The concentration of the chemical component within the reaction solution is modified, during the reaction process, when the detected concentration value is different from the predefined threshold concentration level or different from the predefined concentration range.Type: ApplicationFiled: February 6, 2014Publication date: August 6, 2015Applicant: TSMC Solar Ltd.Inventors: Chung-Hsien WU, Hung-Yu CHANG
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Publication number: 20150169088Abstract: An operating method for an interactive writing device is provided. The operating method includes following steps. A visible light image is captured in response to an original outputted image. A tag searching region is established in the visible light image in response to a writing operation performed by a writing object having a color tag pattern. The original outputted image corresponding to the tag searching region is filtered from the visible light image in the tag searching region to generate a local processed image. A color tag corresponding to the color tag pattern of the writing object is searched from the local processed image. A color value corresponding to the color tag is generated.Type: ApplicationFiled: November 6, 2014Publication date: June 18, 2015Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Lun WEN, Chung-Hsien WU
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Patent number: 9048373Abstract: An evaporation apparatus comprises a chamber configured to contain at least one dispensing nozzle and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one dispensing nozzle and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape. The at least one adjustable shielding member has a heater.Type: GrantFiled: June 13, 2013Date of Patent: June 2, 2015Assignee: TSMC Solar Ltd.Inventors: Chung-Hsien Wu, Chi-Yu Chiang, Shih-Wei Chen, Wen-Tsai Yen
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Publication number: 20150079717Abstract: A method for fabricating a solar cell generally comprises delivering a solar cell substructure to a chamber. Electromagnetic radiation is generated using a wave generating device that is coupled to the chamber such that the wave generating device is positioned proximate to the solar cell substructure. The electromagnetic radiation is applied onto at least a portion of the solar cell substructure to facilitate the diffusion of at least one metal element through at least a portion of the solar cell substructure such that a semiconductor interface is formed between at least two different types of semiconductor materials of the solar cell substructure.Type: ApplicationFiled: September 13, 2013Publication date: March 19, 2015Applicant: TSMC SOLAR LTD.Inventors: Wen-Tsai YEN, Jyh-Lih WU, Wei-Lun XU, Chung-Hsien WU
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Publication number: 20150059850Abstract: A device and method of improving efficiency of a thin film solar cell by providing a back reflector between a back electrode layer and an absorber layer. Back reflector reflects sunlight photons back into the absorber layer to generate additional electrical energy. The device is a photovoltaic device comprising a substrate, a back electrode layer, a back reflector, an absorber layer, a buffer layer, and a front contact layer. The back reflector is formed as a plurality of parallel lines.Type: ApplicationFiled: August 29, 2013Publication date: March 5, 2015Applicant: TSMC SOLAR LTD.Inventors: Jyh-Lih WU, Li XU, Wen-Tsai YEN, Chung-Hsien WU
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Publication number: 20150050772Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.Type: ApplicationFiled: August 15, 2013Publication date: February 19, 2015Applicant: TSMC Solar Ltd.Inventors: Chung-Hsien WU, Wen-Chin LEE
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Publication number: 20150044814Abstract: A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities.Type: ApplicationFiled: August 9, 2013Publication date: February 12, 2015Applicant: TSMC Solar Ltd.Inventors: Chung-Hsien WU, Wen-Tsai YEN, Jyh-Lih WU
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Publication number: 20140370623Abstract: An evaporation apparatus comprises a chamber configured to contain at least one dispensing nozzle and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one dispensing nozzle and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape. The at least one adjustable shielding member has a heater.Type: ApplicationFiled: June 13, 2013Publication date: December 18, 2014Inventors: Chung-Hsien WU, Chi-Yu CHIANG, Shih-Wei CHEN, Wen-Tsai YEN
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Publication number: 20140360864Abstract: A method generally comprises providing heat to a substrate in at least one buffer chamber and transferring the substrate to at least one deposition chamber that is coupled to the buffer chamber via an conveyor. The method also includes depositing a first set of a plurality of elements, using sputtering, and a second set of a plurality of elements, using evaporation, onto at least a portion of the substrate in the deposition chamber.Type: ApplicationFiled: June 7, 2013Publication date: December 11, 2014Inventors: Wen-Tsai YEN, Chung-Hsien WU, Chi-Yu CHIANG, Shih-Wei CHEN, Wen-Chin LEE
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Publication number: 20140352751Abstract: A solar cell includes an absorber layer, a buffer layer on the absorber layer, a front contact layer where a glass substrate, a back contact layer on the glass substrate, the absorber layer on the back contact layer, the buffer layer, and the front contact layer are manufactured as a first module at a temperature exceeding 500 degrees Celsius. The solar further includes an extracted portion from the first module where the extracted portion includes the absorber layer, the buffer layer, and the front contact layer, and where the extracted portion is applied to a flexible substrate or other substrate.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: Chung-Hsien WU, Wei-Lun XU, Shih-Wei CHEN, Wen-Tsai YEN, Li XU
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Patent number: 8846438Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.Type: GrantFiled: March 19, 2014Date of Patent: September 30, 2014Assignee: TSMC Solar Ltd.Inventors: Wen-Tsai Yen, Chung-Hsien Wu, Shih-Wei Chen, Wen-Chin Lee
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Publication number: 20140206132Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.Type: ApplicationFiled: March 19, 2014Publication date: July 24, 2014Applicant: TSMC SOLAR LTD.Inventors: Wen-Tsai YEN, Chung-Hsien WU, Shih-Wei CHEN, Wen-Chin LEE
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Publication number: 20140144769Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.Type: ApplicationFiled: November 29, 2012Publication date: May 29, 2014Applicant: TSMC SOLAR LTD.Inventors: Wen-Tsai YEN, Chung-Hsien WU, Shih-Wei CHEN, Ying-Hsin WU, Jui-Fu HSUEH, Kuan-Chu CHEN
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Publication number: 20140130856Abstract: A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.Type: ApplicationFiled: November 15, 2012Publication date: May 15, 2014Applicant: TSMC SOLAR LTD.Inventors: Shih-Wei CHEN, Wen-Chin LEE, Wen-Tsai YEN, Chung-Hsien WU, Kuan-Chu CHEN
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Publication number: 20140109958Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer for photon absorption over a substrate, forming a buffer layer above the absorber layer, wherein both the absorber layer and the buffer layer are semiconductors, and forming a layer of intrinsic zinc oxide above the buffer layer through a hydrothermal reaction in a solution of a zinc-containing salt and an alkaline chemical.Type: ApplicationFiled: October 18, 2012Publication date: April 24, 2014Applicant: TSMC SOLAR LTD.Inventors: Shih-Wei CHEN, Wei-Lun XU, Wen-Tsai YEN, Chung-Hsien WU, Wen-Chin LEE