Abstract: A dynamic random access memory (DRAM) includes a memory array and a control device. The memory array includes a refresh unit. The refresh unit includes a first cell and a second cell. The first cell is configured to store data, and have a programmed voltage level by being programmed. The second cell is configured to have a test voltage level by being programmed in conjunction with the first cell, wherein the first cell and the second cell are controllable by a same row of the memory array. The control device is configured to increase a voltage difference between the programmed voltage level and a standard voltage level for determining binary logic when the test voltage level becomes lower than a threshold voltage level, wherein the threshold voltage level is higher than the standard voltage level.

Abstract: The present disclosure provides a dynamic random access memory (DRAM) and a method of operating the same. The DRAM includes a memory array, a refresh device and an access device. The refresh device is configured to perform a self-refresh operation on the memory array, wherein the self-refresh operation is interrupted in response to an access command. The access device is configured to access the memory array in response to the access command and the interruption of the self-refresh operation.

Abstract: The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a refresh unit, an accessing device and a refresh device. The refresh unit has a plurality of memory rows. The accessing device is configured to access the memory rows. The refresh device is configured to refresh the refresh unit in a first manner in response to a first event, in which a quantity of accessed memory rows of the refresh unit is not greater than a threshold quantity. The refresh device is configured to refresh the refresh unit in a second manner in response to a second event, in which the quantity of accessed memory rows of the refresh unit is greater than the threshold quantity.

Abstract: The present disclosure provides a DRAM. The DRAM includes a memory array and a control device. The memory array has a plurality of word lines configured to control memory cells. The control device is configured to operate at least one word line of the word lines, derive an information on the operating of the at least word line, and cease maintaining data stored in the memory cells controlled by the at least one word line when the information satisfies a condition.

Abstract: The present disclosure provides a DRAM including a first refresh unit, a second refresh unit, and a control device. The first refresh unit has a first quantity of valid data. The second refresh unit has a second quantity of valid data less than the first quantity of valid data. The control device is configured to determine that the first refresh unit has a greater quantity of valid data than the second refresh unit, move valid data of the second refresh unit into the first refresh unit, and cease refreshing the second refresh unit whose valid data was moved into the first refresh unit.

Abstract: Present disclosure includes a system for preserving data in a volatile memory and a method thereof. The volatile memory comprises a plurality of refreshing units, and each of the refreshing units comprises a plurality of word lines for storing data. The system comprises an accessing unit. The accessing unit is configured to detect a row-hammer indication indicating a first word line is frequently accessed, wherein the accessing unit is configured to copy data stored in the first word line to a second word line when the row-hammer indication is detected on the first word line, wherein the data stored in the first and the second word lines are available to be selectively accessed.

Abstract: Present disclosure relates to a system for preserving data in a volatile memory and a method thereof. The volatile memory comprises a plurality of word lines for storing data. The system comprises an accessing detector. The accessing detector is configured to detect a row-hammer indication indicating a first word line is frequently accessed, wherein the accessing detector is configured to copy data stored in the first word line to a second word line when the row-hammer indication is detected on the first word line, wherein the data stored in the first and the second word lines are available to be selectively accessed.

Abstract: The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a plurality of banks, a power source and a control device. Each of the banks includes a plurality of subarrays. The control device derives information on a quantity of operated subarrays among the subarrays, and determines how much electrical energy to provide based on the information. The power source provides the resultant amount of electrical energy based on the determination from the control device.

Abstract: The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a refresh unit and an accessing device. The refresh unit includes a target row on which a read/write (R/W) operation is requested to be performed. The accessing device is configured to perform the R/W operation on the target row while the refresh unit is being refreshed.

Abstract: The present disclosure provides a DRAM. The DRAM includes a memory array of memory cells, a control device and a charge pump circuit. The control device derives an information associated with a command, and determine, based on the information, whether to provide an amount of electrical energy greater than, less than, or equal to an amount of electrical energy currently required. The charge pump circuit provides the memory array with the resultant amount of electrical energy based on the determination.

Abstract: The present disclosure provides a method. The method includes copying a data stored in memory cells associated with a normal word line subject to a row hammer effect into memory cells associated with a hot word line before a condition is satisfied, wherein the condition includes an access frequency of the normal word line reaching a threshold frequency; accessing, based on a logical address, the normal word line before the condition is satisfied; accessing, based on the logical address, the hot word line associated with the copied data only if the condition is satisfied; and accessing the data no longer from the normal word line only if the condition is satisfied.

Abstract: A method of accessing a non-volatile memory is disclosed. Original bits of data are duplicated on a bit level to generate a plurality of duplicated bits corresponding to each original bit. At least one shielding bit is provided between the duplicated bits corresponding to different original bits. The duplicated bits and the at least one shielding bit are programmed to the non-volatile memory. The original bits are generated or determined according to the duplicated bits.

Abstract: A method of accessing a non-volatile memory is disclosed. Original bits of data are duplicated on a bit level to generate a plurality of duplicated bits corresponding to each original bit. At least one shielding bit is provided between the duplicated bits corresponding to different original bits. The duplicated bits and the at least one shielding bit are programmed to the non-volatile memory. The original bits are generated or determined according to the duplicated bits.

Abstract: A storage device and data processing method thereof is described. The invention provides different ECC for different memory pages. The storage device uses the long-bit ECC for easy interference page, and uses the short-bit ECC for hard interference page. Therefore, the accuracy of the data is maintained and the reading/writing speed is increased.

Abstract: The present invention discloses a storage device and an operation method thereof. The storage device includes a non-volatile memory for storing data, a control unit coupled to the non-volatile memory, a power supply unit coupled to an external power source and converting the external power source to a suitable voltage for the non-volatile memory and the control unit, and a power monitor unit for monitoring the external power source. When the external power source falls below a low voltage threshold of the non-volatile memory, a control signal is transmitted into the control unit so as to stop accessing the non-volatile memory. The non-volatile memory finishes the last processing procedure according to the last programming instruction sent by the control unit before the control signal for protecting the data stored in the non-volatile memory.

Abstract: A storage device and data processing method thereof is described. The invention provides different ECC for different memory pages. The storage device uses the long-bit ECC for easy interference page, and uses the short-bit ECC for hard interference page. Therefore, the accuracy of the data is maintained and the reading/writing speed is increased.