Abstract: Among other things, one or more systems and techniques for transition time evaluation of a circuit are provided herein. In some embodiments, a comparator is configured to receive a circuit signal from the circuit. The circuit signal is evaluated by the comparator based upon one or more control voltages to create one or more voltage waveforms. In some embodiments, the one or more voltage waveforms have substantially similar slopes. A time converter, such as a time-to-current converter or a time-to-digital converter, is used to evaluate the one or more output waveforms to determine a transition time, such as a rise time or a fall time, of the circuit. In some embodiments, the one or more output waveforms are used to reconstruct a transition waveform representing a waveform of the circuit signal.

Abstract: A circuit for measuring the gain of an operational amplifier is provided. The circuit comprises a first operational amplifier, a first resistive device and a second resistive device. The first operational amplifier has an original gain and includes a first input terminal and a second input terminal. The first resistive device is coupled between the first input terminal and the second input terminal of the first operational amplifier. The second resistive device is coupled to the second input terminal of the first operational amplifier. The first resistive device and the second resistive device are configured to reduce a predetermined amount of gain from the original gain of the first operational amplifier.

Abstract: A method of density-controlled floorplan design for integrated circuits having a plurality of blocks includes positioning decoupling capacitor (DCAP) cells at least partially around a pattern density sensitive block. The method also includes changing at least a portion of a pattern density insensitive block adjacent to the pattern density sensitive block according to at least one pattern density rule.

Abstract: A system and method for reducing density mismatch is disclosed. An embodiment comprises determining a conductor density and an active area density in a high density area and a low density area of a semiconductor device. Dummy material may be added to the low density area in order to raise the conductor density and the active area density, thereby reducing the internal density mismatches between the high density area and the low density area. Additionally, a similar process may be used to reduce external mismatches between different regions on the semiconductor substrate. Once these mismatches have been reduced, empty regions surrounding the different regions may additionally be filled in order to reduce the conductor density mismatch and the active area density mismatches.

Abstract: In some embodiments, an integrated circuit device includes a semiconductor substrate. An active area is disposed in the semiconductor substrate. A first guard ring is disposed in the semiconductor substrate and entirely surrounds the active area. The first guard ring has a first conductivity type. A via penetrates through the semiconductor substrate and is spaced apart from the active area such that the via is disposed outside of the first guard ring. A second guard ring is disposed in the semiconductor substrate and entirely surrounds the via and the first guard ring. The second guard ring has the first conductivity type and is disjoint from the first guard ring.

Abstract: A method of density-controlled floorplan design for integrated circuits having a plurality of blocks includes positioning decoupling capacitor (DCAP) cells at least partially around a pattern density sensitive block. The method also includes changing at least a portion of a pattern density insensitive block adjacent to the pattern density sensitive block according to at least one pattern density rule.

Abstract: 3D integrated circuit devices include first and second semiconductor bodies. The first semiconductor body has an active area, a through-silicon-via outside the active area, and two or more disjoint guard rings. The first guard ring encircles the via. The second guard ring encircles the active area, but not the via. The guard rings can reduce the noise coupling coefficient between the via and the active area to ?60 dB or less at 3 GHz and 20 ?m spacing.

Abstract: A circuit for measuring the gain of an operational amplifier is provided. The circuit comprises a first operational amplifier, a first resistive device and a second resistive device. The first operational amplifier has an original gain and includes a first input terminal and a second input terminal. The first resistive device is coupled between the first input terminal and the second input terminal of the first operational amplifier. The second resistive device is coupled to the second input terminal of the first operational amplifier. The first resistive device and the second resistive device are configured to reduce a predetermined amount of gain from the original gain of the first operational amplifier.

Abstract: A method of determining an effective capacitance of a ring oscillator free of short current. The method comprises determining a frequency of an oscillator signal communicated from a ring oscillator to an inverter via a first communication path. The first communication path has connectivity to a first voltage source, a ground path and the inverter. The first communication path is divided into a second communication path and a third communication path. The method further comprises determining a voltage line current. The method additionally comprises determining an effective capacitance of the ring oscillator based on a first voltage of the first voltage source, the voltage line current and the frequency of the oscillator signal communicated to the inverter along the third communication path.

Abstract: Among other things, one or more systems and techniques for transition time evaluation of a circuit are provided herein. In some embodiments, a comparator is configured to receive a circuit signal from the circuit. The circuit signal is evaluated by the comparator based upon one or more control voltages to create one or more voltage waveforms. In some embodiments, the one or more voltage waveforms have substantially similar slopes. A time converter, such as a time-to-current converter or a time-to-digital converter, is used to evaluate the one or more output waveforms to determine a transition time, such as a rise time or a fall time, of the circuit. In some embodiments, the one or more output waveforms are used to reconstruct a transition waveform representing a waveform of the circuit signal.

Abstract: A method of determining an effective capacitance of a ring oscillator free of short current. The method comprises determining a frequency of an oscillator signal communicated from a ring oscillator to an inverter via a first communication path. The first communication path has connectivity to a first voltage source, a ground path and the inverter. The first communication path is divided into a second communication path and a third communication path. The method further comprises determining a voltage line current. The method additionally comprises determining an effective capacitance of the ring oscillator based on a first voltage of the first voltage source, the voltage line current and the frequency of the oscillator signal communicated to the inverter along the third communication path.

Abstract: A diode string voltage adapter includes diodes formed in a substrate of a first conductive type. Each diode includes a deep well region of a second conductive type formed in the substrate. A first well region of the first conductive type formed on the deep well region. A first heavily doped region of the first conductive type formed on the first well region. A second heavily doped region of the second conductive type formed on the first well region. The diodes are serially coupled to each other. A first heavily doped region of a beginning diode is coupled to a first voltage. A second heavily doped region of each diode is coupled to a first heavily doped region of a next diode. A second heavily doped region of an ending diode provides a second voltage. The deep well region is configured to be electrically floated.

Abstract: 3D integrated circuit devices include first and second semiconductor bodies. The first semiconductor body has an active area, a through-silicon-via outside the active area, and two or more disjoint guard rings. The first guard ring encircles the via. The second guard ring encircles the active area, but not the via. The guard rings can reduce the noise coupling coefficient between the via and the active area to ?60 dB or less at 3 GHz and 20 ?m spacing.

Abstract: A diode string voltage adapter includes diodes formed in a substrate of a first conductive type. Each diode includes a deep well region of a second conductive type formed in the substrate. A first well region of the first conductive type formed on the deep well region. A first heavily doped region of the first conductive type formed on the first well region. A second heavily doped region of the second conductive type formed on the first well region. The diodes are serially coupled to each other. A first heavily doped region of a beginning diode is coupled to a first voltage. A second heavily doped region of each diode is coupled to a first heavily doped region of a next diode. A second heavily doped region of an ending diode provides a second voltage. The deep well region is configured to be electrically floated.

Abstract: A system and method for reducing density mismatch is disclosed. An embodiment comprises determining a conductor density and an active area density in a high density area and a low density area of a semiconductor device. Dummy material may be added to the low density area in order to raise the conductor density and the active area density, thereby reducing the internal density mismatches between the high density area and the low density area. Additionally, a similar process may be used to reduce external mismatches between different regions on the semiconductor substrate. Once these mismatches have been reduced, empty regions surrounding the different regions may additionally be filled in order to reduce the conductor density mismatch and the active area density mismatches.