Abstract: A multiple-damascene structure is located below a semiconductor device footprint on a printed wiring board, where the structure includes multiple recesses that containing useful devices coupled to a semiconductive device.

Abstract: The present disclosure is directed to semiconductor packages, and methods for making them, which includes a substrate with a top surface and a bottom surface, a substrate recess in the bottom surface of the substrate, a first device positioned over the top surface of the substrate, which has the first device at least partially overlapping the substrate recess, a mold material in the substrate recess, which has the mold material overlapping the bottom surface of the substrate adjacent to the substrate recess, a second device positioned in the substrate recess, and a plurality of interconnect vias in the substrate, which has at least one of the plurality interconnect vias coupled to the first and second devices to provide a direct signal connection therebetween that minimizes signal latency.

Abstract: According to the various aspects, a multi-chip semiconductor package includes a package substrate, an interconnect frame extending beyond a first side edge of the package substrate, the interconnect frame including a bottom surface positioned over and coupled to a top surface of the package substrate, a first semiconductor device positioned at least partially over and coupled to the interconnect frame, and a second semiconductor device positioned on the bottom surface of the interconnect frame alongside of the package substrate. The interconnect frame further includes a redistribution layer and a frame construct layer, and a plurality of vias coupled to the redistribution layer, with the frame construct layer further includes a recessed area, and the first semiconductor device is positioned in the recessed area.

Abstract: According to various examples, a semiconductor package is described including a substrate raiser with interconnect vias that may be positioned on the bottom side of a substrate and mini solder balls positioned on the interconnect vias and a plurality of large solder balls positioned on the bottom side of the substrate adjacent to the substrate raiser, wherein the mini solder balls and the large solder balls extend approximately a same height from the substrate for mounting on a printed circuit board.

Abstract: According to various examples, a device is described. The device may include a package substrate. The device may also include a plurality of semiconductor devices disposed on the package substrate, wherein the plurality of semiconductor devices comprises top surfaces and bottom surfaces. The device may also include a plurality of interconnects coupled to the package substrate, wherein the plurality of interconnects are adjacent to the plurality of semiconductor devices. The device may also include a flyover bridge coupled to the top surfaces of the plurality of semiconductor devices and the plurality of interconnects, wherein the flyover bridge is directly coupled to the package substrate by the plurality of interconnects, and wherein the bottom surfaces of the plurality of semiconductor devices are electrically isolated from the package substrate.

Abstract: A chip package including a chip; a substrate; an interposer module including a first layer having a larger surface area than the surface area of a second layer, wherein a bottom of the second layer is attached to a top of the first layer area creating an exposed surface area of the first layer; via openings extending at least partially through the first layer; via openings extending at least partially through the first layer and the second layer; a plurality of conductive routing electrically coupled between the via openings, wherein the chip is electrically coupled to the via openings of a top of the second layer, wherein the substrate is electrically coupled to via openings of a bottom of the first layer; and an electronic component electrically coupled to the via openings of the exposed surface area of the first layer.

Abstract: The present disclosure relates to a semiconductor package that may include a substrate, an interposer coupled to the substrate, a shield frame including at least one frame recess and at least one opening positioned over the interposer, a conductive shield layer on the shield frame, and a plurality of components coupled to the interposer.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.

Abstract: Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Abstract: There is provided a Bluetooth audio system including a gateway, a primary device and at least one slave device. The gateway and the primary device communicate Bluetooth packets therebetween based on the standard Bluetooth communication protocol. The at least one slave device accomplishes synchronization with the primary device using a user-defined Bluetooth communication protocol so as to listen or snoop the Bluetooth packets exchanged between the gateway and the primary device.

Abstract: A semiconductor package including a molded power delivery module arranged between a package substrate and a semiconductor chip and including a plurality of input conductive structures and a plurality of reference conductive structures, wherein the input conductive structures alternate between the plurality of reference conductive structures, wherein the input conductive structure is electrically coupled with a chip input voltage terminal and a package input voltage terminal, wherein each of the plurality of reference conductive structures are electrically coupled with a semiconductor chip reference terminal and a package reference terminal.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a substrate, a semiconductor die thereon, electrically coupled to the substrate, and an interposer adapted to connect the substrate to a circuit board. The interposer can include a major surface, a recess in the major surface, a first plurality of interconnects passing through the interposer within the recess to electrically couple the substrate to a circuit board, and a second plurality of interconnects on the major surface of the interposer to electrically couple the substrate to the circuit board, wherein each of the second plurality of interconnects comprises a smaller cross-section than some of the first plurality of interconnects.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a first rigid substrate, a second rigid substrate, a flexible substrate comprising a first portion attached to the first rigid substrate, a second portion attached to the second rigid substrate, a middle portion connecting the first portion to the second portion, wherein the middle portion is bent, and metallic traces therethrough, and a component forming a direct interface with the middle portion of the flexible substrate, the component electrically coupled to the metallic traces. In selected examples, the device further includes a casing.

Abstract: An electronic device is disclosed. In one example, the electronic device includes a circuit board comprising a recess a package in the recess, a semiconductor die coupled to the first side of the package, and a bridge extending from the first side of the package to the circuit board wherein the bridge electrically couples the package to the circuit board.

Abstract: Disclosed embodiments include multi-level fan-out integrated-circuit package substrates that provide a low-loss path to active and passive devices, by shunting away from interconnects and inductive loops. The multi-level form factor of a molded mass, allows for the low-loss path.

Abstract: A semiconductor package may include a semiconductor device coupled to a package substrate. The semiconductor package may also include an integrated heat spreader coupled to the package substrate. The semiconductor package may further include a package connector mounted on the integrated heat spreader. According to various examples, a semiconductor system is also described. The semiconductor system may include a first semiconductor package. The first semiconductor package may include a first package connector, and a first integrated heat spreader. The first package connector may be mounted on the first integrated heat spreader. The semiconductor system may also include a second semiconductor package. The second semiconductor package may include a second package connector, and a second integrated heat spreader. The second package connector may be mounted on the second integrated heat spreader. The first package connector may be electrically connected to the second package connector.

Abstract: According to the various aspects, a package substrate with a heterogeneous substrate core including a first core layer that is coextensive with the package substrate and extends through a first section and a second section of the substrate core, in which the first section is adjacent to and thicker than the second section. The first section having at least a second layer and/or a third layer to provide the difference in thickness with the second section.

Abstract: Disclosed embodiments include silicon interconnect bridges that are in a molded frame, where the molded frame includes passive devices and the silicon interconnect bridge includes through-silicon vias that couple to a redistribution layer on both the silicon interconnect bridge and the molded frame.

Abstract: Disclosed embodiments include molded interconnect bridges that are in a molded frame, where the molded frame includes passive devices that couple to a metal buildup layer that includes at least one power rail and one ground rail. The molded interconnects bridge is embedded in an integrated-circuit package substrate between a die side and a land side, and closer to the die side.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a semiconductor article having a package substrate, a first semiconductor die coupled to the package substrate, a second semiconductor die coupled to the package substrate and adjacent the first semiconductor die, and a bridge component therebetween coupling the first semiconductor die to the second semiconductor die. The bridge component can include a bridge substrate, a conductive trace therein, and a passive component coupled to the conductive trace.