Abstract: In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.

Abstract: The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.

Abstract: In a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate first, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.

Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

Abstract: A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

Abstract: A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.

Abstract: PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed.

Abstract: A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.

Abstract: In an embodiment of a method of inspecting a substrate, the substrate on which minute structures are formed is divided into a plurality of inspection regions. A main inspection region among the inspection regions is selected. A main image of the main inspection region and sub-images of sub-inspection regions adjacent to the main inspection region are obtained. An average image of the main image and the sub-images is obtained. The average image is then compared with the main image to detect defects in the main inspection region. Gray levels may be used. The average image may have improved quality so that the defects in the selected inspection region may be rapidly and accurately detected. This process has an improved reliability. Further, the number of inspecting processes for the substrate may be reduced. And a line for the inspection process may be automated so that a worker-free line may be established.

Abstract: In a method, with improved utilization of memory, of inspecting a defect on an object, the object is divided into a plurality of inspection regions. A plurality of levels is determined according to the numbers of defects, which are expected before detecting the defects, on the inspection regions. The defects on a selected inspection region are detected. The level including a range, which corresponds to the number of defects detected on the selected inspection region, is assigned to the selected inspection region with reference to the number of defects detected on the selected inspection region. The steps of detecting defects and assigning levels are repeated with respect to remaining inspection regions.

Abstract: A method of inspecting a substrate is provided comprising applying ultrasonic waves to a substrate, receiving echo pulse signals transmitted through the substrate, and analyzing received echo pulse signals to detect defects in the substrate. Thus, defects in the substrate may be detected.

Abstract: In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.

Abstract: An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.

Abstract: In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.

Abstract: In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.

Abstract: A method for obtaining an image using a selective combination of wavelengths of light includes dispersing a light in accordance with wavelength bands of the light using a dispersing member, irradiating the dispersed light onto an object to measure reflectivities of the light reflected from the object in accordance with the wavelength bands of the light, comparing reflectivity differences between an objective region and a peripheral region of the object, selecting wavelength bands having the reflectivity differences indicated as either positive values or negative values, adjusting the dispersing member to transmit only the light having the selected wavelength bands, passing light only having the selected wavelength bands through the dispersing member to irradiate the light that has passed through the dispersing member onto the object, taking photographs of the object using the irradiated light, and superposing the photographs of the object to obtain the image of the object.

Abstract: A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Abstract: In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.

Abstract: A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

Abstract: Disclosed are a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate. First, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.