Abstract: A method for inspecting a polishing pad, an apparatus for performing the method, and a polishing device adopting the apparatus for preventing wafer defects. Polishing pad defects are detected by comparing optical data from a normal polishing pad, which does not cause wafer defects, with optical data from a polishing pad to be inspected. The respective optical data are obtained by radiating a beam into the polishing pad and then collecting and analyzing a beam reflected from the polishing pad.

Abstract: There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.