Patents by Inventor Chung-Shih Pan
Chung-Shih Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11662323Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: September 14, 2020Date of Patent: May 30, 2023Assignee: ASML Netherlands B.V.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20210172891Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: September 14, 2020Publication date: June 10, 2021Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 10775325Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: September 28, 2018Date of Patent: September 15, 2020Assignee: ASML Netherlands B.V.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20190170671Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: September 28, 2018Publication date: June 6, 2019Inventors: Guochong WENG, Youjin WANG, Chiyan KUAN, Chung-Shih PAN
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Patent number: 10088438Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: October 31, 2016Date of Patent: October 2, 2018Assignee: HERMES MICROVISION, INC.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 10054556Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: GrantFiled: October 31, 2016Date of Patent: August 21, 2018Assignee: HERMES MICROVISION INC.Inventors: You-Jin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9859089Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: July 10, 2015Date of Patent: January 2, 2018Assignee: HERMES MICROVISION INC.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20170053774Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: ApplicationFiled: October 31, 2016Publication date: February 23, 2017Inventors: You-Jin WANG, Chiyan KUAN, Chung-Shih PAN
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Publication number: 20170052129Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: October 31, 2016Publication date: February 23, 2017Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9572237Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: GrantFiled: June 30, 2015Date of Patent: February 14, 2017Assignee: HERMES MICROVISION INC.Inventors: You-Jin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9485846Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: December 18, 2014Date of Patent: November 1, 2016Assignee: HERMES MICROVISION INC.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9460887Abstract: A layer of conductive or semi-conductive material is formed on a surface of a sample and then the sample, when being charged particle beam imaged, is electrically coupled with an object having a large charge-receiving or charge-storage capacity (e.g., capacitance). Hence, the charging on the sample surface is removed and released quickly by the layer. The layer is then removed by reacting it with a predefined agent. The reaction forms a gaseous product which does not form a physical or chemical bond to the sample surface.Type: GrantFiled: May 18, 2009Date of Patent: October 4, 2016Assignee: HERMES MICROVISION, INC.Inventors: You-Jin Wang, Chung-Shih Pan
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Publication number: 20150325402Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: July 10, 2015Publication date: November 12, 2015Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20150305131Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: ApplicationFiled: June 30, 2015Publication date: October 22, 2015Inventors: You-Jin WANG, Chiyan KUAN, Chung-Shih PAN
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Patent number: 9164399Abstract: A system for operating EUV mask stored in reticle SMIF pod and/or dual pod is provided, wherein the reticle SMIF pod and Dual pod are for storing EUV mask. The system can be a sorter for EUV mask transferred from reticle SMIF pod into dual pod, and vice versa, or an operating system for tools relating to EUV mask, wherein the tools may be EUV lithography, or inspection tool for inspecting EUV mask.Type: GrantFiled: January 9, 2013Date of Patent: October 20, 2015Assignee: HERMES-MICROVISION, INC.Inventors: Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9113538Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: GrantFiled: September 27, 2013Date of Patent: August 18, 2015Assignee: HERMES MICROVISION, INC.Inventors: You-Jin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20150102220Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: December 18, 2014Publication date: April 16, 2015Inventors: Guoching Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20140027634Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: ApplicationFiled: September 27, 2013Publication date: January 30, 2014Applicant: HERMES MICROVISION, INC.Inventors: You-Jin WANG, Chiyan KUAN, Chung-Shih PAN
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Patent number: 8604428Abstract: A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.Type: GrantFiled: September 19, 2011Date of Patent: December 10, 2013Assignee: Hermes Microvision, Inc.Inventors: You-Jin Wang, Chung-Shih Pan
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Patent number: 8575573Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: GrantFiled: May 20, 2011Date of Patent: November 5, 2013Assignee: Hermes Microvision, Inc.Inventors: You-Jin Wang, Chiyan Kuan, Chung-Shih Pan