Abstract: The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.

Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

Abstract: The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.

Abstract: A method of controlling particle absorption on a wafer sample being inspected by a charged particle beam imaging system prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.

Abstract: A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.

Abstract: An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.

Abstract: A stage configuration is provided, wherein a ceramic plate is used as the z-stage body to decrease the use of the metal plates in the conventional configuration, so that the compact structure of the z-stage may decrease the vibrational movements of the z-stage. Further, two Laser interferometer are used to detect a movement of different points along a vertical line of the z-stage sidewall to calculate a movement of the specimen surface, so that a horizontal movement of the specimen surface can be detected more accurately.

Abstract: A stage configuration is provided, wherein a ceramic plate is used as the z-stage body to decrease the use of the metal plates in the conventional configuration, so that the compact structure of the z-stage may decrease the vibrational movements of the z-stage.

Abstract: A patterning device handling apparatus for use in charged particle beam imaging is disclosed. The disclosed patterning device handling apparatus comprises a first gripping member and a second gripping member. The first gripping member is equipped with a plurality of first positioning projections, and the second gripping member is equipped with a plurality of second positioning projections. When the patterning device is held at one angle, the first positioning projections abut against one edge of the patterning device and the second positioning projections abut against the opposite edge of the patterning device. When the patterning device is held at another angle, the first positioning projections abut against two neighboring edges of the patterning device, and the second positioning projections abut against the other two neighboring edges of the patterning device. Therefore, the disclosed patterning device handling apparatus can hold the pattering device at different angles.

Abstract: A patterning device holding apparatus includes a support platform unit with a plurality of first positioning projections and a gripper unit. The gripper unit includes a head portion and a plurality of second positioning projections disposed on the head portion, and a rolling member set at a base portion. The grapping and releasing of the patterning device is achieved by the rotation of the gripper unit about a pivot substantially parallel with the center axis of the rolling member. The first and second positioning projections corporately abut against the edges of a patterning device to fix the patterning device in place.

Abstract: A layer of conductive or semi-conductive material is formed on a surface of a sample and then the sample, when being charged particle beam imaged, is electrically coupled with an object having a large charge-receiving or charge-storage capacity (e.g., capacitance). Hence, the charging on the sample surface is removed and released quickly by the layer. The layer is then removed by reacting it with a predefined agent. The reaction forms a gaseous product which does not form a physical or chemical bond to the sample surface.

Abstract: The present invention relates to a defect review system, and/or particularly, to an apparatus and method of defect review sampling, review method and classification on a semiconductor wafer or a pattern lithography reticle during integrated circuit fabrication. These objects are achieved in comparing a reviewed image with a reference image pick-up through a smart sampling filter. A clustering computer system base on high speed network will provide data cache and save operation time and memory. A smart review sampling filter automatically relocate abnormal pattern or defects and classify the device location extracted from design database and/or from golden die image on the same substrate. The column of the present defect review system is comprised of the modified SORIL type objective lens. This column provides solution of improving throughput during sample review, material identification better image quality, and topography image of defect.

Abstract: A patterning device holding apparatus includes a support platform unit with a plurality of first positioning projections and a gripper unit. The gripper unit includes a head portion and a plurality of second positioning projections disposed on the head portion, and a rolling member set at a base portion. The grapping and releasing of the patterning device is achieved by the rotation of the gripper unit about a pivot substantially parallel with the center axis of the rolling member. The first and second positioning projections corporately abut against the edges of a patterning device to fix the patterning device in place.

Abstract: A patterning device handling apparatus for use in charged particle beam imaging is disclosed. The disclosed patterning device handling apparatus comprises a first gripping member and a second gripping member. The first gripping member is equipped with a plurality of first positioning projections, and the second gripping member is equipped with a plurality of second positioning projections. When the patterning device is held at one angle, the first positioning projections abut against one edge of the patterning device and the second positioning projections abut against the opposite edge of the patterning device. When the patterning device is held at another angle, the first positioning projections abut against two neighboring edges of the patterning device, and the second positioning projections abut against the other two neighboring edges of the patterning device. Therefore, the disclosed patterning device handling apparatus can hold the pattering device at different angles.

Abstract: A method of controlling particle absorption on a wafer sample being inspected by a charged particle beam imaging system prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.

Abstract: A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster e-beam lithography system for expose pattern area where features is sub 32 nm.

Abstract: A method for inspecting a semiconductor wafer using an SEM having a nominal focal plane and operable for guiding a beam. The SEM having a stage movable in each of an X-, Y-, and Z-direction, including moving the SEM stage in the XY-direction to a first location for inspection, optically sensing the location of the top surface of an area in relation to the focal plane of the stage, adjusting the position of the stage in the Z-direction so that the top surface of the area is substantially at the focal plane, inspecting the areas, and moving the stage in the XY-direction to the next location such that the next area is under the SEM beam for inspection. The Z-stage using a non-contact optical sensor to provide feedback to drive a plurality of piezoelectric actuator to move the wafer to the focal plane.

Abstract: A method for inspecting a semiconductor wafer using an SEM having a nominal focal plane and operable for guiding a beam. The SEM having a stage movable in each of an X-, Y-, and Z-direction, including moving the SEM stage in the XY-direction to a first location for inspection, optically sensing the location of the top surface of an area in relation to the focal plane of the stage, adjusting the position of the stage in the Z-direction so that the top surface of the area is substantially at the focal plane, inspecting the areas, and moving the stage in the XY-direction to the next location such that the next area is under the SEM beam for inspection. The Z-stage using a non-contact optical sensor to provide feedback to drive a plurality of piezoelectric actuator to move the wafer to the focal plane.

Abstract: There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means.