Abstract: A method and mechanism for performing shift operations using a shuffle unit. A processor includes a shuffle unit configured to perform shuffle operations responsive to shuffle instructions. The shuffle unit is adapted to support shift operations as well. In response to determining a shuffle instruction is received, selected bits of an immediate value of the shuffle instruction are used to generate byte selects for relocating bytes of a source operand. In response to determining the instruction is a shift instruction, the shuffle unit performs an arithmetic operation on a first and second value, where the first value corresponds to a particular destination byte position, and the second value corresponds to the immediate value. The result of the arithmetic operation comprises a byte select which selects one of the bytes of a source operand for conveyance to the particular destination byte position.

Abstract: A cache system is constructed in accordance with an architecture that comprises a tag array into which tags are stored that are used to determine whether a hit or a miss into the cache system has occurred. Further, the cache system comprises a data array into which cache lines of data are stored, each cache line comprising a plurality of sub-lines, and each sub-line is adapted to be written back to a system memory separate from the other sub-lines. The cache system also comprises a controller coupled to the tag and data arrays. The tag array includes a cache-line dirty bit associated with each cache line and the data array includes a plurality of dirty bits for each cache line. The plurality of dirty bits comprises one sub-line dirty bit for each sub-line.

Abstract: A structure and method for forming a carbon-containing layer in at least a portion of the end of range regions of implanted PAI and/or doped regions. The C-containing layer/region getters defects from the implanted PAI region or doped region. Example embodiments show a C-containing layer under at FET. Other example embodiments show an implanted C-containing regions implanted into the EOR region of implanted doped regions, such as pocket regions, S/D regions and SDE regions. Low temperature anneals can be used because the carbon-containing layer reduces defects.

Abstract: A microprocessor including a level two cache memory including asynchronously accessible cache blocks. The microprocessor includes an execution unit coupled to a cache memory subsystem which includes a plurality of storage blocks, each configured to store a plurality of data units. Each of the plurality of storage blocks may be accessed asynchronously. In addition, the cache subsystem includes a plurality of tag units which are coupled to the plurality of storage blocks. Each of the tag units may be configured to store a plurality of tags each including an address tag value which corresponds to a given unit of data stored within the plurality of storage blocks. Each of the plurality of tag units may be accessed synchronously.

Abstract: A cache system comprises a plurality of cache banks, a translation look-aside buffer (TLB), and a scheduler. The TLB is used to translate a virtual address (VA) to a physical address (PA). The scheduler, before the VA has been completely translated to the PA, uses a subset of the VA's bits to schedule access to the plurality of cache banks.

Abstract: A cache system is constructed in accordance with an architecture that comprises a tag array into which tags are stored that are used to determine whether a hit or a miss into the cache system has occurred. Further, the cache system comprises a data array into which cache lines of data are stored, each cache line comprising a plurality of sub-lines, and each sub-line is adapted to be written back to a system memory separate from the other sub-lines. The cache system also comprises a controller coupled to the tag and data arrays. The tag array includes a cache-line dirty bit associated with each cache line and the data array includes a plurality of dirty bits for each cache line. The plurality of dirty bits comprises one sub-line dirty bit for each sub-line.

Abstract: A multiplier includes a plurality of subunits. Each of the plurality of subunits is configured to perform a portion of a multiplication operation, and the plurality of subunits are coupled together to perform the multiplication operation. At least a first subunit of the plurality of subunits and a second subunit of the plurality of subunits are configured to perform a same portion of the multiplication operation. The first subunit and the second subunit are clocked at a first clock frequency, during use, that is less than a second clock frequency at which a remainder of the plurality of subunits are clocked during use. The first subunit and the second subunit each have inputs coupled to a third subunit of the plurality of subunits to receive multiplication operations to be operated upon by the respective first subunit and second subunit.

Abstract: A structure and method for forming a carbon-containing layer in at least a portion of the end of range regions of implanted PAI and/or doped regions. The C-containing layer/region getters defects from the implanted PAI region or doped region. Example embodiments show a C-containing layer under at FET. Other example embodiments show an implanted C-containing regions implanted into the EOR region of implanted doped regions, such as pocket regions, S/D regions and SDE regions. Low temperature anneals can be used because the carbon-containing layer reduces defects.

Abstract: A pocket implant process to reduce defects. We provide a gate structure, on a semiconductor substrate doped with a first conductivity type dopant. We perform a pocket amorphizing implantation procedure to form a pocket implant region adjacent to the gate structure, and an amorphous pocket region. Next, we perform a shallow amorphizing implant to form an amorphous shallow implant region. The amorphous shallow implant region being formed at a second depth above the amorphous pocket region. The substrate above the amorphous shallow implant region preferably remains crystalline. We perform a S/D implant procedure to form Deep S/D regions. We perform an anneal procedure preferably comprised of a first soak step and a second spike step to recrystalilze the amorphous shallow implant region and the amorphous pocket region, The defects created by the pocket implant are reduced by the shallow amorphous implant.

Abstract: A method for incorporating carbon into a wafer at the interstitial a-c silicon interface of the halo doping profile is achieved. A bulk silicon substrate is provided. A carbon-doped silicon layer is deposited on the bulk silicon substrate. An epitaxial silicon layer is grown overlying the carbon-doped silicon layer to provide a starting wafer for the integrated circuit device fabrication. An integrated circuit device is fabricated on the starting wafer by the following steps. A gate electrode is formed on the starting wafer. LDD and source and drain regions are implanted in the starting wafer adjacent to the gate electrode.

Abstract: Various methods and systems for implementing a sectored least recently used (LRU) cache replacement algorithm are disclosed. Each set in an N-way set-associative cache is partitioned into several sectors that each include two or more of the N ways. Usage status indicators such as pointers show the relative usage status of the sectors in an associated set. For example, an LRU pointer may point to the LRU sector, an MRU pointer may point to the MRU sector, and so on. When a replacement is performed, a way within the LRU sector identified by the LRU pointer is filled.

Abstract: A system and method for transferring data using an early response signal to indicate subsequent transmission of data after a fixed latency, wherein the signal and data are transferred from a first clock domain to a second clock domain using a clock skipping technique. In one embodiment, an early response signal is transmitted by a first device k clock pulses prior to transmission of the data. The receiving device, which is operating at a higher clock rate, receives the early response signal and delays the signal by the number of skipped pulses which will occur in the second clock domain before the occurrence of the kth valid pulse. The second device employs a skip pattern generator to generate a signal indicative of this number of skipped pulses and provides the number to a delay circuit which delays the early response signal for an this number of clock pulses. The delayed early response signal is then output to the appropriate logic to indicate the latency of the subsequent data transfer.

Abstract: A cache controller configured to speculatively invalidate a cache line may respond to an invalidating request or instruction immediately instead of waiting for error checking to complete. In case the error checking determines that the invalidation is erroneous and thus should not be performed, the cache controller protects the speculatively invalidated cache line from modification until error checking is complete. This way, if the invalidation is later found to be erroneous, the speculative invalidation can be reversed. If error checking completes without detecting any errors, the speculative invalidation becomes non-speculative.

Abstract: A processor is described which includes a stride detect table. The stride detect table includes one or more entries, each entry used to track a potential stride pattern. Additionally, each entry includes a confidence counter. The confidence counter may be incremented each time another address in the pattern is detected, and thus may be indicative of the strength of the pattern (e.g., the likelihood of the pattern repeating). At a first threshold of the confidence counter, prefetching of the next address in the pattern (the most recent address plus the stride) may be initiated. At a second, greater threshold, a more aggressive prefetching may be initiated (e.g. the most recent address plus twice the stride). In some implementations, the prefetch mechanism including the stride detect table may replace a prefetch buffer and prefetch logic in the memory controller.

Abstract: A system and method for transferring data from a first clock domain to a second clock domain wherein a clock skipping technique is employed to maintain the same level of data throughput in the transmitting and receiving domains. In one embodiment, a plurality of serial data values are received from a device in the first clock domain and are stored in a plurality of flip-flops. The data values are clocked into the flip-flops, one value per flip-flop, at a first clock rate corresponding to the first clock domain. After a value is stored in the last flip-flop, the cycle is repeated and the previously stored values are overwritten. The data values are retrieved from the flip-flops after the values have had time to stabilize, but before they are overwritten. The values are retrieved at a second clock rate corresponding to a second clock domain and are transferred to a device in the second clock domain.

Abstract: A superscalar microprocessor implements a reorder buffer to support out-of-order execution of instructions. To reduce the time delay for identifying mispredicted instructions, prioritizing mispredicted instructions, canceling instructions subsequent to the mispredicted instruction and reading status information from the reorder buffer, the availability of an instruction tag, which identifies the instruction being executed, during the execution of the instruction is utilized. The reorder buffer receives the tag of the instruction issued to the functional unit. In parallel with the execution of the instruction, the reorder buffer generates hit masks identifying instructions to be canceled in the event of a mispredicted branch. In parallel, status information from the instruction (or instructions) being executed is selected from the reorder buffer and prioritization masks are generated.