Patents by Inventor Chung Wu
Chung Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240139142Abstract: Provided is a method for preventing or treating a liver disease, including administering a therapeutically effective amount of pharmaceutical composition to a subject in need, and the pharmaceutical composition includes the isothiocyanate structural modified compound and a pharmaceutically acceptable carrier thereof.Type: ApplicationFiled: September 14, 2023Publication date: May 2, 2024Applicants: TAIPEI VETERANS GENERAL HOSPITAL, NATIONAL YANG MING CHIAO TUNG UNIVERSITY, PHARMAESSENTIA CORPORATIONInventors: Jaw-Ching WU, Yung-Sheng CHANG, Kuo-Hsi KAO, Chan-Kou HWANG, Ko-Chung LIN
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Publication number: 20240135553Abstract: A movement detection method, applied to a navigation input device with a navigation pattern comprising a center pattern and a radial pattern. The movement detection method comprises: (a)capturing a sensing image comprising a center pattern image and at least portion of a radial pattern image by an image sensor, wherein the center pattern image corresponds to the center pattern and the radial pattern image corresponding to the radial pattern; (b)computing a translation of the navigation input device according to shift of the center pattern image; and (c)computing a rotation angle of the navigation input device according to a first pattern relation between the center pattern image and a first portion of the radial pattern image. The translation and the rotation angle can be precisely and sensitively detected even if the joystick device is miniaturized, since the translation and the rotation angle are computed according to the navigation pattern.Type: ApplicationFiled: October 19, 2022Publication date: April 25, 2024Applicant: PixArt Imaging Inc.Inventors: Yi-Chung Chen, Chao-Chien Huang, Chung-Yuo Wu
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Publication number: 20240136174Abstract: In some embodiments, the present disclosure relates to an integrated chip fabrication device. The device includes a stealth laser apparatus arranged over a chuck configured to hold a substrate. An infrared camera is arranged over the chuck and configured to detect an alignment mark below the substrate. The alignment mark is used to align the stealth laser apparatus over the chuck. Control circuitry is configured to operate the stealth laser apparatus to form a stealth damage region at a location within the substrate that is determined based upon the alignment mark. The stealth damage region separates an inner region of the substrate from an outer region of the substrate.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Inventors: Ming-Tung Wu, Hsun-Chung Kuang, Tung-He Chou
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Patent number: 11967596Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.Type: GrantFiled: August 5, 2021Date of Patent: April 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Guo-Huei Wu, Shih-Wei Peng, Wei-Cheng Lin, Hui-Zhong Zhuang, Chih-Liang Chen, Li-Chun Tien, Lee-Chung Lu
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Patent number: 11968840Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.Type: GrantFiled: November 10, 2021Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yong-Jie Wu, Yen-Chung Ho, Hui-Hsien Wei, Chia-Jung Yu, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
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Publication number: 20240129530Abstract: An encoding method for encoding three-dimensional points each having a position represented by a distance and an angle, the encoding method comprising: identifying three-dimensional points that belong to a second processing unit and have been encoded, for inter prediction of a first three-dimensional point belonging to a first processing unit; and selecting a reference three-dimensional point from the three-dimensional points identified to calculate an inter predicted value of the first three-dimensional point. The three-dimensional points identified include a second three-dimensional point and a third three-dimensional point, the second three-dimensional point having a second angle corresponding to a first angle of the first three-dimensional point, the third three-dimensional point having a third angle greater than the second angle.Type: ApplicationFiled: December 22, 2023Publication date: April 18, 2024Inventors: Takahiro NISHI, Toshiyasu SUGIO, Noritaka IGUCHI, Chung Dean HAN, Keng Liang LOI, Zheng WU
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Publication number: 20240124298Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.Type: ApplicationFiled: January 10, 2023Publication date: April 18, 2024Inventors: Yun-Chung Wu, Jhao-Yi Wang, Hao Chun Yang, Pei-Wei Lee, Wen-Hsiung Lu
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Publication number: 20240128231Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.Type: ApplicationFiled: January 4, 2023Publication date: April 18, 2024Inventors: Fu Wei Liu, Pei-Wei Lee, Yun-Chung Wu, Bo-Yu Chiu, Szu-Hsien Lee, Mirng-Ji Lii
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Publication number: 20240120295Abstract: A semiconductor chip and a manufacturing method thereof are provided. The semiconductor chip includes: an array of pillar structures, disposed on a front surface of the semiconductor chip, and respectively including a ground pillar and multiple working pillars laterally spaced apart from and substantially parallel with a line portion of the ground pillar; and dummy pillar structures, disposed on the front surface of the semiconductor chip and laterally surrounding the pillar structures. Active devices formed inside the semiconductor chip are electrically connected to the working pillar. The ground pillars of the pillar structures and the dummy pillar structures are electrically connected to form a current pathway on the front surface of the semiconductor chip.Type: ApplicationFiled: January 30, 2023Publication date: April 11, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Hsien Lee, Yun-Chung Wu, Pei-Wei Lee, Fu Wei Liu, Jhao-Yi Wang
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Patent number: 11955430Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.Type: GrantFiled: March 31, 2021Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Hsuan Lin, Hsi Chung Chen, Ji-Ling Wu, Chih-Teng Liao
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Patent number: 11955554Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.Type: GrantFiled: July 15, 2022Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Huan-Sheng Wei, Hung-Li Chiang, Chia-Wen Liu, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu, Ying-Keung Leung
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Patent number: 11949001Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.Type: GrantFiled: March 21, 2022Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11950412Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.Type: GrantFiled: February 14, 2022Date of Patent: April 2, 2024Assignee: Longitude Flash Memory Solutions LTD.Inventors: Youseok Suh, Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Jean Wu
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Patent number: 11944970Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.Type: GrantFiled: June 10, 2019Date of Patent: April 2, 2024Assignees: INSTANT NANOBIOSENSORS, INC., INSTANT NANOBIOSENSORS CO., LTD.Inventors: Yu-Chung Huang, Yi-Li Sun, Ting-Chou Chang, Jhy-Wen Wu, Nan-Kuang Yao, Lai-Kwan Chau, Shau-Chun Wang, Ying Ting Chen
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Patent number: 11942373Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first fin, a second fin and a third fin therebetween. A first insulating structure includes a first insulating layer formed between the first and third fins, a capping structure covering the first insulating layer, a first insulating liner covering sidewall surfaces of the first insulating layer and the capping structure and a bottom surface of the first insulating layer, and a second insulating liner formed between the first insulating liner and the first fin and between the first insulating liner and the third fin. The second insulating structure includes a second insulating layer formed between the second fin and the third fin and a third insulating liner formed between the second insulating layer and the second fin and between the second insulating layer and the third fin.Type: GrantFiled: May 10, 2023Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chu-An Lee, Chen-Hao Wu, Peng-Chung Jangjian, Chun-Wen Hsiao, Teng-Chun Tsai, Huang-Lin Chao
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Patent number: 11937932Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.Type: GrantFiled: July 8, 2022Date of Patent: March 26, 2024Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITYInventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
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Publication number: 20240096825Abstract: A bond head is provided. The bond head includes a bond base, a chuck member, and an elastic material. The chuck member protrudes from a surface of the bond base, and has a chuck surface formed with vacuum holes for holding a die using differential air pressure. In the direction parallel to the chuck surface, the width of the chuck surface is less than the width of the bond base and is equal to or greater than the width of the die. The elastic material is disposed over the chuck surface. The elastic material is arranged around the periphery of the chuck surface to cover edges and/or corners of the chuck surface.Type: ApplicationFiled: February 8, 2023Publication date: March 21, 2024Inventors: Chen-Hua YU, Chih-Hang TUNG, Kuo-Chung YEE, Yian-Liang KUO, Jiun-Yi WU
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Publication number: 20240096706Abstract: The present disclosure provides a method of forming a semiconductor device. The method includes: forming an interconnect structure over a substrate; forming a first gate structure and a second gate structure in a first layer of the interconnect structure; forming a first metal oxide layer and a second metal oxide layer in a second layer of the interconnect structure over the first gate structure and the second gate structure, respectively; forming an implant mask over the first metal oxide layer and the second metal oxide layer, the implant mask having different thicknesses corresponding to the first metal oxide layer and the second oxide layer; and performing an implantation operation on the first metal oxide layer and the second metal oxide layer.Type: ApplicationFiled: January 12, 2023Publication date: March 21, 2024Inventors: YEN-CHUNG HO, YONG-JIE WU, HUI-HSIEN WEI
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Publication number: 20240094094Abstract: A pump health analysis method and a pump health analysis device using the same are provided. A standard vibration curve of a standard pump is obtained. The standard vibration curve is converted from a time domain to a frequency domain to obtain a first frequency distribution curve. A sample vibration curve of a sample pump is obtained. The sample vibration curve is converted from the time domain to the frequency domain to obtain a second frequency distribution curve. The first frequency distribution curve is compared with the second frequency distribution curve by using a cosine similarity algorithm to obtain a health index of the sample pump.Type: ApplicationFiled: November 9, 2022Publication date: March 21, 2024Inventors: Wei-Chen WU, Cheng-Tai PENG, Chih-Chung KUO
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Patent number: D1024932Type: GrantFiled: March 10, 2022Date of Patent: April 30, 2024Assignee: WALSIN LIHWA CORPORATIONInventors: Ko-Ming Chen, Shih-Hsiang Wang, An-Hung Lin, Min-Chuan Wu, Shao-Pei Lin, Chien-Chung Ni, Chun-Ying Lin