Patents by Inventor Chung-Yi Yu

Chung-Yi Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240243174
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first transistor on a semiconductor substrate. The first transistor includes a first gate structure over the semiconductor substrate, a first pair of source/drain regions on opposing sides of the first gate structure, and a pair of diffusion barrier structures between the first pair of source/drain regions and a lower region of the semiconductor substrate. The first pair of source/drain regions comprise a first dopant. The diffusion barrier structures are co-doped with the first dopant and a second dopant different from the first dopant. A doping concentration of the first dopant within the first pair of source/drain regions is greater than a doping concentration of the first dopant within the diffusion barrier structures.
    Type: Application
    Filed: February 9, 2024
    Publication date: July 18, 2024
    Inventors: Kuei-Ming Chen, Chi-Ming Chen, Chung-Yi Yu
  • Patent number: 12010918
    Abstract: The present disclosure relates to a method of forming a device. The method includes depositing a first layer of getter material on a substrate. A first electrode is formed in a first conductive layer deposited on the first layer of getter material. An insulator element is formed in a piezoelectric layer deposited on the first electrode. A second electrode is formed in a second conductive layer deposited on the insulator element. A first input-output electrode is formed to be conductively connected to the first layer of getter material and a second input-output electrode is formed to be conductively connected to the second electrode.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: June 11, 2024
    Assignee: Taiwan Semiconductor Manaufacturing Company, Ltd.
    Inventors: Chih-Ming Chen, Chung-Yi Yu
  • Publication number: 20240186258
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.
    Type: Application
    Filed: January 24, 2024
    Publication date: June 6, 2024
    Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
  • Publication number: 20240170326
    Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An etch stop layer is formed on the sacrificial substrate. A portion of the etch stop layer is oxidized to form an oxide layer between the sacrificial substrate and the remaining etch stop layer. A capping layer is formed on the remaining etch stop layer. A device layer is formed on the capping layer. A first etching process is performed to remove the sacrificial substrate. A second etching process is performed to remove the oxide layer. A third etching process is performed to remove the remaining etch stop layer. A power rail is formed on the capping layer opposite to the device layer.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Ming Chen, Kuei-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai
  • Publication number: 20240162051
    Abstract: Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.
    Type: Application
    Filed: April 27, 2023
    Publication date: May 16, 2024
    Inventors: Kuo-Ming WU, Hau-Yi HSIAO, Kai-Yun YANG, Che Wei YANG, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
  • Patent number: 11984486
    Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.
    Type: Grant
    Filed: January 23, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Han-Chin Chiu, Chi-Ming Chen, Chung-Yi Yu, Chen-Hao Chiang
  • Patent number: 11932534
    Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.
    Type: Grant
    Filed: March 16, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Hua Lin, Chang-Ming Wu, Chung-Yi Yu, Ping-Yin Liu, Jung-Huei Peng
  • Publication number: 20240088103
    Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Xin-Hua Huang, Chung-Yi Yu, Yeong-Jyh Lin, Rei-Lin Chu
  • Publication number: 20240088285
    Abstract: Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending and formation of a two-dimensional hole gas (2DHG) in the rough buffer layer. The rough buffer layer includes silicon or some other suitable semiconductor material and, in some embodiments, is doped. A top surface of the rough buffer layer and/or a bottom surface of the rough buffer layer is/are rough to promote carrier scattering along the top and bottom surfaces. The carrier scattering reduces carrier mobility and increases resistance at the 2DHG. The increased resistance increases an overall resistance of the silicon substrate, which reduces substrate loses and increases a power added efficiency (PAE).
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Inventors: Kuei-Ming Chen, Chi-Ming Chen, Chung-Yi Yu
  • Publication number: 20240084455
    Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.
    Type: Application
    Filed: February 8, 2023
    Publication date: March 14, 2024
    Inventors: Che Wei YANG, Chih Cheng SHIH, Kuo Liang LU, Yu JIANG, Sheng-Chan LI, Kuo-Ming WU, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
  • Patent number: 11923237
    Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Ming Chen, Kuei-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai
  • Patent number: 11916022
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
  • Patent number: 11901413
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device including a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the semiconductor substrate and is laterally adjacent to the gate electrode. The epitaxial source/drain layer comprises a first dopant. A diffusion barrier layer is between the epitaxial source/drain layer and the semiconductor substrate. The diffusion barrier layer comprises a barrier dopant that is different from the first dopant.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Ming Chen, Chi-Ming Chen, Chung-Yi Yu
  • Publication number: 20240030258
    Abstract: Doping a liner of a trench isolation structure with fluorine reduces dark current from a photodiode. For example, the fluorine may be added to a passivation layer surrounding a backside deep trench isolation structure. As a result, sensitivity of the photodiode is increased. Additionally, breakdown voltage of the photodiode is increased, and a quantity of white pixels in a pixel array including the photodiode are reduced.
    Type: Application
    Filed: July 22, 2022
    Publication date: January 25, 2024
    Inventors: Chung-Liang CHENG, Sheng-Chan LI, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
  • Publication number: 20240030259
    Abstract: Doping a liner of a trench isolation structure with zinc and/or gallium reduces dark current from a photodiode. For example, the zinc and/or gallium may be deposited on a temporary oxide layer and driven into a high-k layer surrounding a deep trench isolation structure and an interface between the high-k layer and surrounding silicon. In another example, the zinc and/or gallium may be deposited on an oxide layer between the high-k layer and surrounding silicon. As a result, sensitivity of the photodiode is increased. Additionally, breakdown voltage of the photodiode is increased, and a quantity of white pixels in a pixel array including the photodiode are reduced.
    Type: Application
    Filed: July 21, 2022
    Publication date: January 25, 2024
    Inventors: Chung-Liang CHENG, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
  • Publication number: 20240023445
    Abstract: In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface is configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and is configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.
    Type: Application
    Filed: July 24, 2023
    Publication date: January 18, 2024
    Inventors: Chih-Ming Chen, Chiao-Chun Hsu, Chung-Yi Yu
  • Publication number: 20240018661
    Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first heating plate arranged within a processing chamber and a second heating plate arranged within the processing chamber vertically over the first heating plate. A first exhaust port is arranged within the processing chamber and a second exhaust port arranged within the processing chamber vertically over the first exhaust port. The first exhaust port is in communication with the first heating plate and is coupled to a first exhaust output. The second exhaust port is in communication with the second heating plate and is coupled to a second exhaust output. A first control element is configured to control a first exhaust pressure at the first exhaust port and a second control element is configured to control a second exhaust pressure at the second exhaust port.
    Type: Application
    Filed: July 24, 2023
    Publication date: January 18, 2024
    Inventors: Chiao-Chun Hsu, Chih-Ming Chen, Chung-Yi Yu, Sheng-Hsun Lu
  • Publication number: 20240021719
    Abstract: A semiconductor device includes a substrate and a seed layer over the substrate. The seed layer includes a first seed sublayer having a first lattice structure, wherein the first seed sublayer includes AlN, and the first seed sublayer is doped with carbon, and a second seed sublayer over the first seed layer, wherein the second seed layer has a second lattice structure different from the first lattice structure, and a thickness of the second seed sublayer ranges from about 50 nanometers (nm) to about 200 nm. The semiconductor device further includes a graded layer over the seed layer. The graded layer includes a first graded sublayer including AlGaN, having a first Al:Ga ratio; and a second graded sublayer over the first graded sublayer, wherein the second graded sublayer includes AlGaN having a second Al:Ga ratio. The semiconductor device further includes a two-dimensional electron gas (2-DEG) over the graded layer.
    Type: Application
    Filed: July 19, 2023
    Publication date: January 18, 2024
    Inventors: Chi-Ming CHEN, Po-Chun LIU, Chung-Yi YU, Chia-Shiung TSAI, Ru-Liang LEE
  • Publication number: 20240021642
    Abstract: The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. The first isolation layer comprises a first dielectric material. A second isolation layer is over the first isolation layer. The second isolation layer lines the first isolation layer. The second isolation layer comprises a second dielectric material. A third isolation layer is over the second isolation layer. The third isolation layer fills the trench and lines the second isolation layer. The third isolation layer comprises a third material. A ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.
    Type: Application
    Filed: July 20, 2023
    Publication date: January 18, 2024
    Inventors: Min-Ying Tsai, Cheng-Te Lee, Rei-Lin Chu, Ching I Li, Chung-Yi Yu
  • Patent number: 11862612
    Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Xin-Hua Huang, Chung-Yi Yu, Yeong-Jyh Lin, Rei-Lin Chu