Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A light-emitting diode (LED) includes a semiconductor structure, a transparent conducting layer, a first electrode, and a second electrode. The semiconductor structure has a lower surface and an upper surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked in a laminating direction from the lower surface to the upper surface. The transparent conducting layer is located on the second semiconductor layer. The first electrode is located on the first semiconductor layer. The second electrode is located on the transparent conducting layer. When viewing the semiconductor structure and the transparent conducting layer from above the LED. The semiconductor structure has a shortest side with a length of X ?m.

Abstract: A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer, and having holes; a first insulation layer disposed on the semiconductor epitaxial structure and having first and second grooves; a first pad electrically connected to the first semiconductor layer through the first grooves; and a second pad electrically connected to the second semiconductor layer through the second grooves. A projection of the first pad does not overlap projections of the holes. A projection of the second pad does not overlap the projections of the holes. The first pad includes a first pad connection portion and first pad extension portions; the second pad includes a second pad connection portion and second pad extension portions. Projections of the second grooves fall between projections of the first and second pad extension portions. Two other aspects of the light-emitting device are also provided.

Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

Abstract: A light emitting device includes a light-emitting laminate and an insulating reflective structure. The insulating reflective structure includes n pairs of dielectric layers stacked on the light-emitting laminate. Each of the n pairs of dielectric layers includes a first material layer and a second material layer. The first material layer has a first refractive index, and the second material layer has a second refractive index that is greater than the first refractive index of the first material layer. For each pair of dielectric layers among m1 pairs of dielectric layers out of the n pairs of dielectric layers, the first material layer has an optical thickness that is greater than that of the second material layer, where 0.5n?m1?n, and n and m1 are natural numbers greater than 0.

Abstract: A light emitting diode includes a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure has a first surface and a second surface. The semiconductor structure includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that includes a P-type contact layer, and a P-type base layer located between the P-type contact layer and the active layer. The active layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The first electrode is located on the second surface of the semiconductor structure, and is electrically connected to the N-type semiconductor layer. The second electrode is located on the second surface of the semiconductor structure, and is electrically connected to the P-type semiconductor layer. A P-type dopant concentration in the P-type contact layer gradually decreases along a direction from the first surface towards the second surface.

Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.

Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: A face-up light-emitting device includes a substrate, a semiconductor stacked structure, and a first insulating stacked structure. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor stacked structure is disposed on the first surface and is capable of emitting light. The first insulating stacked structure is disposed on the semiconductor stacked structure and includes first material layers each of which has a refractive index, and second material layers each of which has a refractive index higher than that of each of the first material layers. The first insulating stacked structure has a geometric thickness ranging from 500 nm to 1000 nm. The first material layers and the second material layers are stacked alternately. A display device including the face-up light-emitting device is also disclosed.

Abstract: A light emitting device includes a semiconductor stack, and an insulating layer partially covering the semiconductor stack. The semiconductor stack includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer that are stacked in sequence. A reflective layer is disposed in the insulating layer, and includes a metal reflective layer and an anti-oxidation layer stacked one on top of the other. A light emitting apparatus is also disclosed.

Abstract: A light-emitting device includes a light-emitting element including an epitaxial structure and a DBR. The DBR includes first and second reflective units. The first reflective unit includes first reflective structures. The second reflective unit includes second reflective structures. Each of the first and second reflective structures has first and second material layers. The first material layer of each of the first reflective structures has an optical thickness different from that of the first material layer of each of the second reflective structures. The second material layer of each of the first reflective structures has an optical thickness different from that of the second material layer of each of the second reflective structures. In each of the first and second reflective structures, the first material layer has a refractive index different from that of the second material layer.

Abstract: The disclosure provides an ultraviolet light emitting diode including an epitaxial structure, a first contact electrode, a second contact electrode, a first connecting electrode, and a first insulating structure. The epitaxial structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence. The first contact electrode is disposed on the epitaxial structure and electrically connected to the first semiconductor layer. The second contact electrode is disposed on the epitaxial structure and electrically connected to the second semiconductor layer. The first connecting electrode is disposed on the first contact electrode. The first insulating structure is disposed on the first connecting electrode and the second contact electrode. The epitaxial structure has multiple conductive holes penetrating from the second semiconductor layer down to the first semiconductor layer.

Abstract: A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

Abstract: A light-emitting device includes an epitaxial light-emitting structure formed on a substrate, a first electrode and a second electrode. The epitaxial light-emitting structure sequentially includes: a first type semiconductor layer including an Al component and electrically connected to the first electrode; an active layer; a second type semiconductor layer electrically connected to the second electrode; a first recess extending from the second type semiconductor layer to the first type semiconductor layer and having a projected area on the substrate ranging from 20% to 70% of that of the epitaxial light-emitting structure; and a second recess extending from the first type semiconductor layer toward the substrate. A light-emitting apparatus is also disclosed.

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.

Abstract: An LED device includes an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, first and second electrodes that are disposed on the epitaxial layered structure, and an insulating structure. The first electrode includes a first body portion and a first extending portion connected together. The first extending portion includes a first part and multiple second parts. A projection of the first part on the first semiconductor layer does not overlap a projection of the insulating structure on the first semiconductor layer. The first part has a first sub-part and multiple second sub-parts. A projection of the first sub-part on the first semiconductor layer has a first length, and a projection of each of the second sub-parts on the first semiconductor layer independently has a second length measured in the same direction. The first length is greater than the second length.

Abstract: A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.

Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

Abstract: A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y?3. A method for manufacturing the light-emitting device is also provided herein.