Abstract: A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked in such order in a stacking direction, and including a plurality of through holes. The through holes extend downwardly in a direction from the second semiconductor layer to the first semiconductor layer. The through holes expose a portion of a surface of the first semiconductor layer. The light-emitting device has an ampacity. Each of the through holes has a first radius. A ratio of the first radius to the ampacity ranges from 0.1 to 0.4. A light-emitting apparatus including the light-emitting device is also provided.

Abstract: A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

Abstract: A light-emitting device includes a substrate, a first and second mesa structures disposed on the substrate, at least one current blocking element, at least one conductive bridging element, and first and second conductive pads. The conductive bridging element is disposed on the current blocking element, and is electrically connected to the first and second mesa structures. The first and second conductive pads are electrically connected to the first and second mesa structures, respectively. The conductive bridging element has a projection image that is spaced apart from those of the first and second conductive pads in a plan view of the light-emitting device. A light-emitting module including the light-emitting device, and a display apparatus including the light-emitting device are also disclosed.

Abstract: The disclosure relates to a technical field of a semiconductor optoelectronic device, and more particularly, to a light emitting diode and a light emitting device. To solve an issue that a metal layer of the existing light emitting diode has insufficient adhesion on an insulation layer, the light emitting diode includes a semiconductor epitaxial stack layer including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer sequentially stacked and disposed; an interface transition layer located above the semiconductor epitaxial stack layer; the interface transition layer including an insulation metal oxide or a stack layer of the insulation metal oxides; a first insulation layer disposed between the interface transition layer and the semiconductor epitaxial stack layer; the metal layer covering a portion of a surface of the interface transition layer and electrically connected to the semiconductor epitaxial stack layer.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of light-transmitting layers including at least two of the light-transmitting layers which have different refractive indices and roughened interface.

Abstract: A light-emitting diode includes: a substrate, an epitaxial layer and a protective layer; the epitaxial layer is disposed on the substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially in that order; the protective layer covers the epitaxial layer; the epitaxial layer is divided into chiplets, each chiplet includes transverse and longitudinal sidewalls intersecting in transverse and longitudinal directions, dicing channels are defined between adjacent chiplets, the dicing channels include transverse and longitudinal dicing channels extending respectively in the transverse and longitudinal directions, the protective layer covers the dicing channels and chiplet sidewalls, a patterned structure is disposed on the protective layer in an intersecting area of the transverse and the longitudinal dicing channels, and includes a groove extending toward the substrate.

Abstract: A LED chip includes a current blocking layer that includes a first portion and a second portion and a current expansion layer defined with a first opening; and the first portion is disposed in the first opening of the current expansion layer. A first gap is defined between the first portion and the current expansion layer; a second gap is defined between the first portion and the second portion; an electrode structure covers the first portion and is in contact with an upper surface of a semiconductor light-emitting sequence stacking layer through the first gap; at least a portion of an extension strip is formed on the second portion of the current blocking layer and the current expansion layer; a part of an edge of the first opening of the current expansion layer is disposed on the second portion of the current blocking layer.

Abstract: A light-emitting diode and a light-emitting device are provided. A transparent conductive layer, a current blocking layer and a first metal reflective layer are sequentially arranged on a side of a second semiconductor layer away from an active layer. A side of the first metal reflective layer adjacent to the current blocking layer is a first Al reflective layer, and metal Al has high reflectivity in a short-wave band, increasing the reflection of light radiated by the active layer. Since there is no need to form an adhesion layer between the first Al reflective layer and the current blocking layer, there is no light absorption problem of the adhesion layer. A projection area of the first metal reflective layer is greater than or equal to that of the transparent conductive layer, so that the first metal reflective layer can cover a larger light-emitting surface, thereby further improving the light reflection.

Abstract: A micro LED includes an n-type semiconductor layer, a p-type semiconductor layer, a transition structure, an active structure and a hole injection layer. The transition structure includes first to third transition units. The active structure includes an M number of quantum well structures. Each of the M number of quantum well structures includes a barrier layer and a well layer. The third transition unit includes a Q number of layer units each including a barrier layer and a well layer. In each of the Q number of layer units, the barrier layer has an Al concentration that is 1.2 to 3 times an Al concentration of the barrier layer of each 10 of the M number of quantum well structures. The hole injection layer has an Al concentration that is not greater than the Al concentration of the barrier layer of each of the M number of quantum well structures.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of first light-transmitting layers and at least one set of second light-transmitting layers stacked on each other in the first direction. The first light-transmitting layers has interface roughness greater than that of the second light-transmitting layers.

Abstract: A light-emitting diode and a light-emitting device are provided. The light-emitting diode includes: a semiconductor stacked layer including: a first semiconductor layer, a light-emitting layer and a second semiconductor layer sequentially stacked in that order from a lower surface to an upper surface; a first electrode disposed on the first semiconductor layer; a second electrode; and a first current blocking layer disposed between the first semiconductor layer and the first electrode. When looking down at the semiconductor stacked layer from above the light-emitting diode, a second blocking area of the first current blocking layer is not overlapped with the first electrode, and at least part of the second blocking area is disposed outside an edge of the first electrode proximate to a side of the second electrode. Through a design of the first current blocking layer, light extraction and resistance to electro-static discharge (ESD) impacts are improved.

Abstract: A light-emitting diode includes a current-blocking layer disposed on a second semiconductor layer of a semiconductor stacking layer and including a strip-shaped part, a transparent conducting layer disposed on the second semiconductor layer and covering the current-blocking layer, a first electrode disposed on a first semiconductor layer of the semiconductor stacking layer, and a second electrode disposed on the transparent conducting layer and including a second electrode pad and a second electrode extension part. As viewed from a top of the light-emitting diode towards the semiconductor stacking layer, a first side of the strip-shaped part defines a first distance from a side of the second electrode extension part facing towards the first side, and a second side of the strip-shaped part defines a second distance from a side of the second electrode extension part facing towards the second side, and the first distance is greater than the second distance.

Abstract: A light-emitting diode includes an epitaxial structure, a first electrical connection structure, a second electrical connection structure, a first insulation layer, and a second insulation layer. The epitaxial structure has a first surface, a second surface opposite to the first surface, and a side boundary surface formed between the first surface and the second surface, and includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are sequentially arranged. The epitaxial structure is formed with at least one recess on the second surface. The at least one recess is formed near a periphery of the side boundary surface. The first electrical connection structure has a protrusion extending through the at least one recess, and electrically connected to the first type semiconductor layer. At least a portion of the side boundary surface positioned above the at least one recess has a roughened surface.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: A light-emitting diode includes a substrate and a semiconductor layered structure that is located on the substrate. The semiconductor layered structure includes at least one light-emitting unit, a semiconductor island-structure, and a trench. The trench is located between the at least one light-emitting unit and the semiconductor island-structure. A light-emitting device includes the light-emitting diode.

Abstract: A light emitting device and a light emitting diode structure are provided. The light emitting diode structure includes a light emitting diode, a protection diode, an insulating layer, two pads, and a conductive structure. The protection diode is connected in antiparallel to the light emitting diode. Each diode includes an epitaxial structure and electrodes located on the epitaxial structure. The insulating layer covers the epitaxial structure of each diode. A first pad is located on the insulating layer and electrically connected to a first electrode and a fourth electrode. A second pad is located on the insulating layer and electrically connected to a second electrode. The conductive structure is connected to the second pad and electrically connected to the N-type semiconductor layer of the protection diode. A material of the conductive structure and a material of the first electrode are different.

Abstract: Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower surface and an upper surface, the semiconductor stacked layer includes a first semiconductor layer, a light emitting layer and a second semiconductor layer; focusing a first laser beam and a second laser beam into the substrate, a focusing position of the first laser beam is closer to the lower surface than that of the second laser beam, the first laser beam is focused to form at least one first laser cutting line, laser scratches of each first laser cutting line are quasi-circular, and the at least one first laser cutting line includes a laser cutting line closest to the lower surface; and separating the LED wafer to form LED chips.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.

Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.