Abstract: A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.

Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

Abstract: A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y?3. A method for manufacturing the light-emitting device is also provided herein.

Abstract: A flip-chip LED device includes an epitaxial structure, a first contact electrode, and a second contact electrode. The second contact electrode is disposed on the epitaxial structure and extending toward the first contact electrode. The second contact electrode includes a first curved extension, a second curved extension, a connecting portion, a first straight extension, and a second straight extension. The connecting portion is connected to the first curved extension and to the second curved extension. The first straight extension is connected to the first curved extension. The second straight extension is connected to the second curved extension.

Abstract: A flip-chip light-emitting device includes a light-emitting unit, a first electrode, and a second electrode. The light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode is disposed on the light-emitting unit and electrically connected to the first type semiconductor layer. The second electrode is disposed on the light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode or the second electrode is free of gold, and includes an aluminum layer and at least one platinum layer disposed on the aluminum layer opposite to the light-emitting unit.

Abstract: A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 ?m. A display apparatus and a lighting apparatus are also disclosed.

Abstract: A light-emitting diode includes a substrate, a light-emitting unit, an insulating layer, a first contact electrode and a second contact electrode. The insulating layer is disposed on the light-emitting unit, and has a first through hole and a second through hole. The first contact electrode and the second contact electrode pass through the first through hole and the second through hole to be electrically connected to the light-emitting unit, respectively. A projection of one of the first contact electrode and the second contact electrode on the substrate is rectangular-like in shape and has a first arc side and a second arc side that are opposite to each other.

Abstract: A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

Abstract: A flip-chip semiconductor light-emitting element and a semiconductor light-emitting device are provided. The element includes a substrate and a light-emitting epitaxial layer disposed on the substrate. When electrode structures are formed overlying the light-emitting epitaxial layer, a first electrode layer partially covering the light-emitting epitaxial layer is omitted, thus a surface of the light-emitting epitaxial layer has a higher flatness. When an insulating reflective layer and an insulating protective layer are subsequently formed, flatness of the insulating reflective layer and the insulating protective layer can be ensured.

Abstract: A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and a plurality of bridging electrodes disposed on the epitaxial surface. The epitaxial structure includes first, second and third light emitting units spacedly and sequentially disposed on the substrate surface. A projection of the second light emitting unit has a first edge and a second edge that is connected with and perpendicular to the first edge. The epitaxial surface has an operating zone on the second light emitting unit that is adapted to be pushed by an ejector pin. A length of the second edge is equal to or greater than a diameter of the operating zone.

Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

Abstract: A light-emitting diode (LED) chip includes a semiconductor epitaxial structure and a reflective structure. The reflective structure is formed on an upper surface and side surfaces of the semiconductor epitaxial structure. The reflective structure has a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from the semiconductor epitaxial structure. A semiconductor light-emitting device including the LED chip, and a display device including a plurality of the LED chips are also disclosed.

Abstract: A light-emitting diode chip includes a light-emitting unit, a first electrode, an insulating layer, and a second electrode. The first electrode is disposed on the light-emitting unit. The insulating layer is disposed on the first electrode and the light-emitting unit, and has a through hole and a hole-defining wall. The hole-defining wall has a top peripheral edge that has two opposite end points. A projection of at least one of the end points of the top peripheral edge on the light-emitting unit falls outside a projection of a top surface of the first electrode on the light-emitting unit. The second electrode is disposed on the insulating layer and fills the through hole to electrically connect to the first electrode.

Abstract: The present disclosure provides a light-emitting diode chip, which includes a substrate, an epitaxial structure, an electrode metal layer, and a eutectic metal layer. The eutectic metal layer has an elongation greater than that of the electrode metal layer, and a hardness less than that of the electrode metal layer.

Abstract: An epitaxial substrate structure includes: a patterned substrate unit including a substrate having a top surface and spaced-apart protrusions formed thereon; and a buffer layer disposed on the top surface and the protrusions. Each of the protrusions has a bottom adjacent to the top surface, and a top opposite to the bottom. The buffer layer has a first portion disposed on the top surface, and second portions respectively disposed on the protrusions. Each of the second portions of the buffer layer has a thickness that gradually reduces from the bottom to the top along a respective one of the protrusions. An LED chip including the epitaxial substrate structure and manufacturing methods of the epitaxial substrate structure and the LED chip are also provided.

Abstract: Alight-emitting diode includes an epitaxial unit, a first electrode, and a second electrode. One of the first electrode and the second electrode includes a first reflective layer, a wire-bonding electrode layer, a second reflective layer wrapping a portion of the wire-bonding electrode layer, and a stress adjustment layer which wraps around the first reflective layer. The first reflective layer includes platinum, and the second reflective layer includes a material which has a Mohs hardness of not less than 6. The stress adjustment layer has a Mohs hardness of not less than 6, and the stress adjustment layer has a thickness that is 65% to 75% of a thickness of the first reflective layer.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure disposed on the substrate, and first and second electrode units disposed on the epitaxial structure. The first and second electrode units are electrically connected to first and second semiconductor layers of the epitaxial structure, respectively. A surface of the epitaxial structure opposite to the substrate has an operating zone to be pushed by an ejector pin during a packaging process. A projection of the second electrode unit on the substrate bypasses a projection of the operating zone on the substrate, and extends toward the first electrode unit.

Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: A light-emitting device includes a substrate, a first and second mesa structures disposed on the substrate, at least one current blocking element, at least one conductive bridging element, and first and second conductive pads. The conductive bridging element is disposed on the current blocking element, and is electrically connected to the first and second mesa structures. The first and second conductive pads are electrically connected to the first and second mesa structures, respectively. The conductive bridging element has a projection image that is spaced apart from those of the first and second conductive pads in a plan view of the light-emitting device. A light-emitting module including the light-emitting device, and a display apparatus including the light-emitting device are also disclosed.