Abstract: A semiconductor device includes a substrate having a seal ring region and a circuit region, at least one corner bump disposed in the circuit region, a seal ring structure disposed in the seal ring region, and a connector electrically coupling a metal layer of the seal ring structure to the at least one corner bump. The at least one corner bump is configured to be coupled to a signal ground. A method of fabricating a semiconductor device includes providing a substrate having a seal ring region and a circuit region, providing at least one corner bump in a triangular corner bump zone in the circuit region, providing a seal ring structure in the seal ring region, electrically coupling a metal layer of the seal ring structure to the at least one corner bump, and electrically coupling the at least one corner bump to a signal ground.

Abstract: An integrated circuit includes a seal ring structure disposed around a circuit that is disposed over a substrate. A first pad is electrically coupled with the seal ring structure. A leakage current test structure is disposed adjacent to the seal ring structure. A second pad electrically coupled with the leakage current test structure, wherein the leakage current test structure is configured to provide a leakage current test between the seal ring structure and the leakage current test structure.

Abstract: The present disclosure provides a semiconductor device that includes a substrate having a seal ring region and a circuit region, a plurality of dummy gates disposed over the seal ring region of the substrate, and a seal ring structure disposed over the plurality of dummy gates in the seal ring region. A method of fabricating a semiconductor device is also provided, the method including providing a substrate having a seal ring region and a circuit region, forming a plurality of dummy gates over the seal ring region of the substrate, and forming a seal ring structure over the plurality of dummy gates over the seal ring region.

Abstract: A semiconductor chip includes a corner stress relief (CSR) region. An enhanced structure connects sides of a seal ring structure to surround the CSR region. A device under test (DUT) structure is disposed on the CSR region. A set of probe pad structures is disposed on the CSR region. Two of the set of probe pad structures are electrically connect to the DUT structure.

Abstract: A semiconductor device includes a substrate having a circuit region and a seal ring region. The seal ring region surrounds the circuit region. A seal ring structure is disposed over the seal ring region. The seal ring structure has a first portion and a second portion above the first portion. The first portion has a width W1, and the second portion has a width W2. The width W1 is less than the width W2.

Abstract: A structure for reducing partially etched materials is described. The structure includes a layout of an intersection area between two trenches. First, a large intersection area having a trapezoidal corner may be replaced with an orthogonal intersection between two trenches. The layout reduces the intersection area as well as the possibility of having partially etched materials left at the intersection area. The structure also includes an alternative way to fill the intersection area with either an un-etched small trapezoidal area or multiple un-etched square areas, so that the opening area at the intersection point is reduced and the possibility of having partially etched materials is reduced too.

Abstract: A semiconductor chip includes a circuit region and a corner stress relief (CSR) region. The CSR region is in a corner of the semiconductor chip. A device under test (DUT) structure or a functional circuit is disposed on the circuit region. A probe pad is disposed on the CSR region. A metal line extends from the circuit region to the CSR region to electrically connect the probe pad to the DUT structure or a functional circuit.

Abstract: A structure for reducing partially etched materials is described. The structure includes a layout of an intersection area between two trenches. First, a large intersection area having a trapezoidal corner may be replaced with an orthogonal intersection between two trenches. The layout reduces the intersection area as well as the possibility of having partially etched materials left at the intersection area. The structure also includes an alternative way to fill the intersection area with either an un-etched small trapezoidal area or multiple un-etched square areas, so that the opening area at the intersection point is reduced and the possibility of having partially etched materials is reduced too.

Abstract: A semiconductor device includes a substrate having a seal ring region and a circuit region, at least one corner bump disposed in the circuit region, a seal ring structure disposed in the seal ring region, and a connector electrically coupling a metal layer of the seal ring structure to the at least one corner bump. The at least one corner bump is configured to be coupled to a signal ground. A method of fabricating a semiconductor device includes providing a substrate having a seal ring region and a circuit region, providing at least one corner bump in a triangular corner bump zone in the circuit region, providing a seal ring structure in the seal ring region, electrically coupling a metal layer of the seal ring structure to the at least one corner bump, and electrically coupling the at least one corner bump to a signal ground.

Abstract: A device includes a package substrate including a first non-reflowable metal bump extending over a top surface of the package substrate; a die over and bonded to the package substrate; and a package component over the die and bonded to the package substrate. The package component includes a second non-reflowable metal bump extending below a bottom surface of the package component. The package component is selected from the group consisting essentially of a device die, an additional package substrate, and combinations thereof. A solder bump bonds the first non-reflowable metal bump to the second non-reflowable metal bump.

Abstract: The present disclosure provides a semiconductor device that includes a substrate having a seal ring region and a circuit region, a plurality of dummy gates disposed over the seal ring region of the substrate, and a seal ring structure disposed over the plurality of dummy gates in the seal ring region. A method of fabricating a semiconductor device is also provided, the method including providing a substrate having a seal ring region and a circuit region, forming a plurality of dummy gates over the seal ring region of the substrate, and forming a seal ring structure over the plurality of dummy gates over the seal ring region.

Abstract: A semiconductor chip includes a corner stress relief (CSR) region. An enhanced structure connects sides of a seal ring structure to surround the CSR region. A device under test (DUT) structure is disposed on the CSR region. A set of probe pad structures is disposed on the CSR region. Two of the set of probe pad structures are electrically connect to the DUT structure.

Abstract: A semiconductor chip includes a circuit region and a corner stress relief (CSR) region. The CSR region is in a corner of the semiconductor chip. A device under test (DUT) structure or a functional circuit is disposed on the circuit region. A probe pad is disposed on the CSR region. A metal line extends from the circuit region to the CSR region to electrically connect the probe pad to the DUT structure or a functional circuit.