Abstract: A semiconductor arrangement includes a first dielectric feature passing through a semiconductive layer and a first dielectric layer over a substrate. The semiconductor arrangement includes a conductive feature passing through the semiconductive layer and the first dielectric layer and electrically coupled to the substrate. The conductive feature is adjacent the first dielectric feature and electrically isolated from the semiconductive layer by the first dielectric feature.

Abstract: A method includes removing a first dummy gate stack and a second dummy gate stack to form a first trench and a second trench. The first dummy gate stack and the second dummy gate stack are in a first device region and a second device region, respectively. The method further includes depositing a first gate dielectric layer and a second gate dielectric layer extending into the first trench and the second trench, respectively, forming a fluorine-containing layer comprising a first portion over the first gate dielectric layer, and a second portion over the second gate dielectric layer, removing the second portion, performing an annealing process to diffuse fluorine in the first portion into the first gate dielectric layer, and at a time after the annealing process, forming a first work-function layer and a second work-function layer over the first gate dielectric layer and the second gate dielectric layer, respectively.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

Abstract: A display panel including a substrate, a light emitting structure layer, a C-plate, and a first bandpass polarizing reflective layer is provided. The light emitting structure layer is disposed on the substrate and includes first light emitting structures. The first light emitting structures have a first peak emission wavelength. The C-plate is disposed on a side of the light emitting structure layer away from the substrate. The first bandpass polarizing reflective layer is disposed between the light emitting structure layer and the C-plate and overlapped with the light emitting structure layer. A reflectance of the first bandpass polarizing reflective layer for light with a wavelength in a first wavelength range is greater than 20%. The first wavelength range is the first peak emission wavelength±20 nm.

Abstract: An apparatus including a pixel electrode circuit is provided. The pixel electrode circuit includes a first switch, a second switch, a first-type transistor, a first second-type transistor, and a second second-type transistor. The first switch and the second switch are respectively controlled by a first control signal and a second control signal. The first-type transistor includes a gate electrically connected to a first node, a first terminal connected to a first power supply voltage, and a second terminal connected to a third node. The first second-type transistor includes a gate electrically connected to a second node, a first terminal connected to a second power supply voltage, and a second terminal connected to the third node. The second second-type transistor includes a gate electrically connected to the second node, a first terminal being grounded, and a second terminal providing an output voltage.

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

Abstract: A method for manufacturing methyltetrahydrophthalic anhydride is provided, which includes steps as follows. Maleic anhydride is added into a reactor. Piperylene is added into the reactor, so that the piperylene and the maleic anhydride undergo a first addition reaction. When a conversion rate of the maleic anhydride is more than 25%, the first addition reaction is completed. Isoprene is added into the reactor, so that the isoprene and the maleic anhydride undergo a second addition reaction to obtain a methyltetrahydrophthalic anhydride product. The methyltetrahydrophthalic anhydride product contains 3-methyltetrahydrophthalic anhydride and 4-methyltetrahydrophthalic anhydride.

Abstract: Some embodiments relate to an integrated chip that includes a first source/drain region and a second source/drain region disposed in a substrate. A plane that is substantially perpendicular to an upper surface of the substrate traverses the first source/drain region and the second source/drain region. Agate electrode extends over a channel region in the substrate between the first source/drain region and the second source/drain region. The gate electrode is separated from the channel region by way of a charge trapping dielectric structure. The charge trapping dielectric structure includes a tunnel dielectric layer, a charge trapping dielectric layer over the tunnel dielectric layer, and a blocking dielectric layer over the charge trapping dielectric layer. The channel region has a channel width measured perpendicularly to the plane, and the tunnel dielectric layer has different thicknesses at different respective points along the channel width.

Abstract: Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.

Abstract: In a method of distinguishing objects in images, a first image segmentation model is applied to segment a first segmented image including a first object from a test image. A second image segmentation model is applied to segment a second segmented image including a second object from the test image. A third segmented image marking the first object and the second object is obtained according to first coordinates of the first object in the first segmented image and/or second coordinates of the second object in the second segmented image. The method can segment different objects from an image quickly and accurately.

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

Abstract: An apparatus including a pixel electrode circuit is provided. The pixel electrode circuit includes a first switch, a second switch, a first-type transistor, a first second-type transistor, and a second second-type transistor. The first switch and the second switch are respectively controlled by a first control signal and a second control signal. The first-type transistor includes a gate electrically connected to a first node, a first terminal connected to a first power supply voltage, and a second terminal connected to a third node. The first second-type transistor includes a gate electrically connected to a second node, a first terminal connected to a second power supply voltage, and a second terminal connected to the third node. The second second-type transistor includes a gate electrically connected to the second node, a first terminal being grounded, and a second terminal providing an output voltage.

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: A thermal compensation system for machine tools includes a thermal compensation-monitoring device and a cloud processing device. The thermal compensation-monitoring device receives a plurality of temperature signals of a workpiece and corresponding processing tolerance data to build or update a thermal compensation database. The cloud processing device provides a thermal compensation model, and applies the model with the characterized temperature signals and the tolerance data to generate a compensation value so as to decide whether or not to modify the model or to run a compensation is necessary.

Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a dummy gate structure over a substrate, forming a first spacer on a sidewall of the dummy gate structure and a second spacer on the first spacer, forming a source/drain structure on the substrate, removing the second spacer, forming a dielectric structure over the source/drain structure, replacing the dummy gate structure with a metal gate structure and a capping structure on the metal gate structure, and forming an opening in the dielectric structure. The opening exposes the source/drain structure. The method further includes forming a dummy spacer on a sidewall of the opening, forming a contact structure in the opening, and removing the dummy spacer to form an air gap between the contact structure and the metal gate structure. The contact structure is in contact with the source/drain structure in the opening.

Abstract: A method for detecting a product for defects implemented in an electronic device, the method obtains an image of a product to be detected, obtains a reconstructed image by inputting the image to be detected into a pre-trained autoencoder, generates a difference image from the image and the reconstructed image, obtains a number of feature absolute values by performing clustering processing on the difference image; generates a target image according to the number of feature absolute values, the difference image, and a preset value; and determines a defect detection result by detecting the target image for defects.

Abstract: An inductive module with a miniaturized metamaterial structure includes an insulating substrate, two coil units, and a magnetic unit. The insulating substrate has opposing first and second surfaces and a through hole extending between the first and second surfaces. The coil units are respectively disposed on the first surface and the second surface of the insulating substrate, and are electrically connected to each other through the through hole. Each of the coil units includes a closed loop coil. The magnetic unit corresponds in position to a portion of the coil unit, surrounds said portion of the coil unit, and has an opening.

Abstract: An inductive module with a miniaturized metamaterial structure includes an insulating substrate, two coil units, and a magnetic unit. The insulating substrate has opposing first and second surfaces and a through hole extending between the first and second surfaces. The coil units are respectively disposed on the first surface and the second surface of the insulating substrate, and are electrically connected to each other through the through hole. Each of the coil units includes a closed loop coil. The magnetic unit corresponds in position to a portion of the coil unit, surrounds said portion of the coil unit, and has an opening.