Abstract: The present disclosure provides a semiconductor module comprising a semiconductor device removably pressed-fit in a cavity formed in a printed circuit board and methods for manufacturing the same. The semiconductor device and the cavity of the printed circuit board can cooperate with each other and act as an electrical plug and an electrical socket respectively. Soldering the semiconductor device on the printed circuit board can be avoided. Therefore, the packaging process can be more flexible and reliability issues with solder joints can be eliminated. Moreover, heatsink can be mounted on top and/or bottom of the semiconductor device after being received in the cavity of the printed circuit board. Thermal dissipation efficiency can be greatly enhanced.

Abstract: Some embodiments of the disclosure provide methods for calculating carbon footprints of leather chemical materials. In some examples, the method includes: determining a calculation range of a carbon footprint of a leather chemical material in a life cycle as “cradle to gate”; determining a system boundary, a functional unit, and cut-off criteria for the carbon footprint of the leather chemical material in the life cycle; dividing the carbon footprint into a raw chemical obtaining process, a production process of the leather chemical material, and a waste disposal process within the system boundary; determining a carbon footprint calculation model for the leather chemical material according to resource consumption and environmental emission of each process; collecting and determining a quantity and a value required by each parameter in the carbon footprint calculation model; and calculating the carbon footprint of the leather chemical material using the carbon footprint calculation model.

Abstract: Some embodiments of the disclosure provide accounting methods for carbon footprints of leather products. In some examples, the accounting method includes the following steps: firstly, determining a system boundary for a carbon footprint in a life cycle of a leather product; dividing the carbon footprint into a raw material production and transportation stage, a leather product production stage, and a leather product transportation and distribution stage within the system boundary for the leather product; determining carbon emission source inventories of the stages and emission factors thereof in combination with process and flow characteristics of the stages, and then constructing carbon emission accounting models of the stages, and calculating carbon footprint data of the stages, and, finally, obtaining the carbon footprint of the leather product.

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; a drain contact and a source contact on the second nitride semiconductor layer; a common contact on the second nitride semiconductor layer and between the drain contact and source contact; a first gate structure on the second nitride semiconductor layer and between the drain contact and common contact; a second gate structure on the second nitride semiconductor layer and between the common contact and source contact; a conductive wire on the source contact; a dielectric layer on the second nitride semiconductor layer and covering a portion of a lateral surface of the conductive wire; and a conductive via connected to the conductive wire, extending through a portion of the dielectric layer, the second nitride semiconductor layer, and the first nitride semiconductor layer to the substrate.

Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Abstract: The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer. The second electrode is disposed on the second nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer and between the first electrode and the second electrode. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.

Abstract: An in-situ stress measurement device for ultra-deep non-vertical drilling adopts a technical route of single channel and bidirectional rolling of in-hole equipment, and its related functions are mainly realized by a bidirectional rolling device and a split-type axial-force-free circuit switching valve. The bidirectional rolling device can drive the in-hole equipment to move freely in a circumferential direction and back and forth, which changes sliding friction between the in-hole equipment and a hole wall into rolling friction during an in-situ stress measurement of non-vertical drilling. The split-type axial-force-free circuit switching valve provides a technical solution for a single-pipe test in the non-vertical drilling.

Abstract: According to an aspect of the present disclosure, a radiation element is provided, comprising: a basic radiation element and one or more bandwidth extension structures; wherein the one or more bandwidth extension structures are mounted on the basic radiation element to extend the operating bandwidth of the basic radiation element. The present disclosure has the following advantages: the radiation element according to the present disclosure has one or more bandwidth extension structures to extend the operating bandwidth of the basic radiation element, such that by combining the plurality of bandwidth extension structures and the basic radiation element, the radiation element may work well at bands beyond its original operating band, which eliminates the need of using a plurality of basic radiation elements due to different operating bandwidths as required, thereby saving costs.

Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Abstract: A semiconductor structure includes a first nitride semiconductor layer; a second nitride semiconductor layer and a first conductive structure. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first conductive structure is disposed on the second nitride semiconductor layer. The first conductive structure functions as one of a drain and a source of a transistor and one of an anode and a cathode of a diode.

Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Abstract: The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer. The second electrode is disposed on the second nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer and between the first electrode and the second electrode. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: The present invention provides a system and method for measuring an intermittent operating life (IOL) of a GaN-based device under test (DUT) is provided. The system is operable in a stressing mode, a cooling mode and a measure mode. A power regulation approach is adopted to ensure that DUT of the same thermal resistance have same temperature increase during the IOL test. The present invention eliminates the influence caused by parasitic parameters of testing circuits and the inconsistency of threshold voltage and drain-source resistance of the device itself. Through power regulation, it is the junction temperature of the device, not the housing temperature of the device, being directly controlled. Therefore, higher measurement accuracy can be achieved.

Abstract: The present invention relates to a semiconductor device having an improved gate leakage current. The semiconductor device includes: a substrate; a first nitride semiconductor layer, positioned above the substrate; a second nitride semiconductor layer, positioned above the first nitride semiconductor layer and having an energy band gap greater than that of the first nitride semiconductor layer; a source contact and a drain contact, positioned above the second nitride semiconductor layer; a doped third nitride semiconductor layer, positioned above the second nitride semiconductor layer and between the drain contact and the source contact; and a gate electrode, positioned above the doped third nitride semiconductor layer, where the doped third nitride semiconductor layer has at least one protrusion extending along a direction substantially parallel to an interface between the first nitride semiconductor layer and the second nitride semiconductor layer, thereby improving the gate leakage current phenomenon.

Abstract: A nitride semiconductor device includes a semiconductor carrier, a first nitride-based chip, and first conformal connecting structures. The first nitride-based chip is disposed over the semiconductor carrier. The semiconductor carrier has a first planar surface. The first nitride-based chip has a second planar surface, first conductive pads, and first slanted surfaces. The first conductive pads are disposed in the second planar surface. The first slanted surfaces connect the second planar surface to the first planar surface. The first conformal connecting structures are disposed on the first planar surface and the first nitride-based chip. First obtuse angles are formed between the second planar surface and the first slanted surfaces. Each of the first conformal connecting structures covers one of the first slanted surfaces of the first nitride-based chip and one of the first obtuse angles and is electrically connected to the first conductive pads.

Abstract: An object of the present disclosure is to provide a radiation element and a bandwidth extension structure. The radiation element according to the present disclosure comprises: a basic radiation element and one or more bandwidth extension structures; wherein the one or more bandwidth extension structures are mounted on the basic radiation element to extend the operating bandwidth of the basic radiation element. The bandwidth extension structure according to the present disclosure is mounted on the basic radiation element to extend the operating band of the basic radiation element.