Abstract: A method for producing a semiconductor module, involving the steps: providing a carrier plate and a substrate having a bonding layer arranged on a surface of the carrier plate or the substrate, applying adhesive in multiple adhesive areas of the carrier plate or the substrate which are free from the bonding layer, positioning the substrate on the carrier plate such that the substrate and the carrier plate are in contact with the bonding layer and the adhesive, and joining the substrate and the carrier plate across the bonding layer by melting or sintering of the bonding layer.

Abstract: A rollover alarming system, a rollover risk prediction method, and a rollover alarming method. An axle housing strain measurement unit measures strain values on both sides of an axle housing of a vehicle body. A roll angle measurement unit measures a roll angle of the vehicle body. A collection control unit is configured to collect the strain values on both sides of the axle housing of the vehicle body and the roll angle of the vehicle body, calculate a strain difference between the strain values according to the strain values on both sides of the axle housing of the vehicle body, and output a corresponding alarm control signal according to the strain difference between both sides of the axle housing of the vehicle body and the roll angle of the vehicle body. An alarm unit is configured to output a corresponding alarm signal according to the received alarm control signal.

Abstract: The present disclosure provides application of a compound in conformity with a general formula I and an isomer or pharmaceutically acceptable salt thereof to preparation of a medicinal composition for treating or preventing a high altitude disease. The high altitude disease is selected from an acute high altitude disease and a chronic high altitude disease generated in a high altitude environment with an altitude of 2,000 m or above.

Abstract: A semi-manufactured power semiconductor module includes a substrate for bonding at least one power semiconductor chip; a first leadframe bonded to the substrate and providing power terminals; and a second leadframe bonded to the substrate and providing auxiliary terminals; wherein the first leadframe and/or the second leadframe include an interlocking element adapted for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

Abstract: The present disclosure provides application of a compound in conformity with a general formula I, and an isomer or pharmaceutically acceptable salt thereof to preparation of a medicinal composition for treating and/or preventing a high altitude disease. The high altitude disease is selected from an acute high altitude disease or a chronic high altitude disease generated in a high altitude environment with an altitude of 2,000 m or above.

Abstract: A mounting member for a vehicle, the mounting member including a mounting member body having a longitudinal axis, at least one static opening extending through the body transverse to the longitudinal axis, and at least one blind listener bushing, each blind fastener bushing having a bushing body and a blind fastener receptacle extending axially through the bushing body. The bushing body has a bushing cross-sectional shape that interlocks and couples with a static opening cross-sectional shape of a respective one of the at least one static opening so that rotation of the at least one blind fastener bushing is constrained relative to the mounting member body and the static opening cross-sectional shape is maintained upon application of a blind fastener installation torque or blind fastener removal torque being applied to the blind fastener receptacle by a respective blind fastener.

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Abstract: The present disclosure discloses an electric assembly and a vehicle having the same. The electric assembly includes: a box assembly, where an mounting plate is disposed in the box assembly, and the mounting plate divides a space within the box assembly into a motor holding cavity and a transmission holding cavity; a motor, disposed in the motor holding cavity; a transmission, disposed in the transmission holding cavity, where the motor is power-coupled to the transmission; and a cooling lubricating liquid, filling the transmission holding cavity and cooling the box assembly.

Abstract: The present disclosure discloses an electric assembly and a vehicle having the same. The electric assembly includes: a box assembly, where an mounting plate is disposed in the box assembly, and the mounting plate divides a space within the box assembly into a motor holding cavity and a transmission holding cavity; a motor, disposed in the motor holding cavity; a transmission, disposed in the transmission holding cavity, where the motor is power-coupled to the transmission; and a cooling device, disposed in the motor holding cavity and cooling the box assembly.

Abstract: The present disclosure discloses an electric assembly and a vehicle having the same. The electric assembly includes: a box assembly; a motor, disposed in the box assembly; a transmission, disposed in the box assembly, where the transmission is power-coupled to the motor; and a controller, disposed outside the box assembly, and fixedly connected to the box assembly.

Abstract: A powertrain and a vehicle including the powertrain are provided. The powertrain includes: an electric motor; a transmission mounted to the electric motor and defining, together with the electric motor, an angled space for helping a half shaft of the transmission to extend along an axial direction of the transmission; a controller mounted to at least one of the electric motor and the transmission and electrically connected to the electric motor, where the controller, the transmission, and the electric motor are integrated together, at least one part of the controller being located in the angled space.

Abstract: A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

Abstract: A power module included a plurality of normally-on semiconductor switches based on a wide bandgap substrate, the normally-on semiconductor switches connected in parallel; and a balancing unit including a capacitor and a balancing semiconductor switch connected in series, which are connected in parallel to the normally-on semiconductor switches.

Abstract: Provided are a quinazoline derivative, a pharmaceutical composition containing the same, a method for preparation of said derivative, and an application of same as an anti-cancer drug.

Abstract: Disclosed herein are inventive polypeptides (e.g., comprising a thermal sensitive ion channel or variant thereof and a domain 5 of kininogen 1 or variant or fragment thereof) and nucleic acid molecules encoding inventive polypeptides. Also disclosed are methods for modulating a cell comprising administering certain compositions (e.g., pharmaceutical compositions of the nucleic acid molecule) and applying a static magnetic field or an electromagnetic field. Methods for treating diseases or disorders in an animal (e.g., a human) comprising administering certain compositions (e.g., pharmaceutical compositions of the nucleic acid molecule) and applying a static magnetic field or an electromagnetic field, are further disclosed.

Abstract: A power module included a plurality of normally-on semiconductor switches based on a wide bandgap substrate, the normally-on semiconductor switches connected in parallel; and a balancing unit including a capacitor and a balancing semiconductor switch connected in series, which are connected in parallel to the normally-on semiconductor switches.

Abstract: Provided are a quinazoline derivative, a pharmaceutical composition containing the same, a method for preparation of said derivative, and an application of same as an anti-cancer drug.

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

Abstract: A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.