Abstract: Provided is a full-screen display device with unit pixel having function for emitting and receiving light, including a water-oxygen barrier layer, a protective panel, a plurality of unit pixels, a light-shielding layer, and a plurality of lens. At least one of the unit pixels has a light-emitting area inside, and has a light-sensing area inside or outside. For biometrics recognition, the light-emitting area emits an incident light, which penetrates through the water-oxygen barrier layer and scatters outwardly by at least one of the lenses. The scattered incident light penetrates through the protective panel, and reflected by a test object. The reflected light penetrates through the protective panel and is converged by at least one of the lenses. The converged reflected light penetrates through the water-oxygen barrier, and the light-sensing area receives and converts the reflected light to an image electrical signal.

Abstract: Provided is a full-screen display device having different unit pixels for emitting and receiving light, including a water-oxygen barrier layer, a protective panel, a plurality of unit pixels, a light-shielding layer, and a plurality of lenses. When the device performs biometric recognition, at least one unit pixel is defined as a light-emitting element, at least one unit pixel is defined as a sensing element, and the sensing element has a light-sensing area. The light-emitting element emits an incident light to penetrate the water-oxygen barrier layer and scatter outwardly by at least one lens. The scattered incident light penetrates the protective panel, and then reflected by a test object, followed by penetrating the protective panel, and entering at least one lens, which converges the reflected light. The converged light penetrates the water-oxygen barrier layer to be received by the light-sensing area and converted into an image electrical signal.

Abstract: An electrolytic polishing treatment method for a nickel-based alloy workpiece made by lamination manufacturing comprises the following steps. Step (A) comprises performing a sandblasting treatment on the nickel-based alloy workpiece, followed by ultrasonic oscillation of the sandblasted nickel-based alloy workpiece in an oxalic acid solution. Step (B) comprises placing the nickel-based alloy workpiece in an electrolyte solution containing methanol, sulfuric acid, and perchloric acid and performing electrolytic polishing on the nickel-based alloy workpiece at a constant voltage after step (A). The processes of oxalic acid activation and electrolytic polishing are used to avoid the problems of residual stress and processing directionality caused by conventional mechanical processing and make the surface properties of the entire workpiece uniform.

Abstract: A core wire includes: an inner conductor; and an insulating layer covering the inner conductor, wherein the insulation layer is made by 3D printing process, the insulating layer includes a first semi-insulating layer and a second semi-insulating layer, each of the first semi-insulating layer and the second semi-insulating layer has a groove that matchingly accommodates the shape of the inner conductor, and the first semi-insulating layer and the second semi-insulating layer are combined together.

Abstract: A semiconductor device includes a substrate, a pair of semiconductor fins, a dummy fin structure, a gate structure, a plurality of source/drain structures, a crystalline hard mask layer, and an amorphous hard mask layer. The pair of semiconductor fins extend upwardly from the substrate. The dummy fin structure extends upwardly above the substrate and is laterally between the pair of semiconductor fins. The gate structure extends across the pair of semiconductor fins and the dummy fin structure. The source/drain structures are above the pair of semiconductor fins and on either side of the gate structure. The crystalline hard mask layer extends upwardly from the dummy fin and has a U-shaped cross section. The amorphous hard mask layer is in the first hard mask layer, wherein the amorphous hard mask layer having an U-shaped cross section conformal to the U-shaped cross section of the crystalline hard mask layer.

Abstract: A decoration panel includes a first substrate, a first transparent conductive element, a transparent structure, a second substrate, a second transparent conductive element, and a first cholesteric liquid crystal layer. The first transparent conductive element is disposed on the first substrate. The transparent structure is disposed on the first substrate. The second substrate is disposed opposite to the first substrate. The second transparent conductive element is disposed on the second substrate. The first cholesteric liquid crystal layer is disposed between the first transparent conductive element and the second transparent conductive element. A display apparatus is adapted to render a decoration pattern, and the decoration pattern corresponds to the transparent structure. Moreover, a display apparatus including the decoration panel is also provided.

Abstract: A two dimensional touch sensor panel can be thermoformed or curved by another process to a three-dimensional touch sensor panel, and the three-dimensional touch sensor panel can be laminated to a three-dimension surface having a highly curved or spherical shape. In some examples, thermoforming a two-dimensional touch sensor panel into a three-dimensional touch sensor panel can result in strain of the touch electrodes, and can result in non-uniform three-dimensional touch electrodes (distortion of the two-dimensional touch electrode pattern). The strain can be a function of the curved touch-sensitive surface and/or process related mechanical strain from thermoforming. In some examples, a three-dimensional touch sensor panel can be formed with uniform area touch electrodes using a two-dimensional touch sensor panel pattern with non-uniform area touch electrodes in accordance with the strain pattern expected for a given curved surface and thermoforming technique.

Abstract: A display device including a substrate, a cholesteric liquid crystal layer, and a transparent electrode layer that are sequentially stacked is provided. The cholesteric liquid crystal layer includes cholesteric liquid crystal molecules and a plurality of transparent photoresist structures. Each of the transparent photoresist structures is a closed structure, and the cholesteric liquid crystal molecules are respectively accommodated in a plurality of patterned areas respectively surrounded by the transparent photoresist structures, so as to form a plurality of cholesteric liquid crystal patterns. The transparent electrode layer includes a plurality of sub-electrodes. The cholesteric liquid crystal patterns are respectively driven by the sub-electrodes. An orthogonal projection of each of the transparent photoresist structures on the substrate falls in an orthogonal projection of a corresponding sub-electrode of the sub-electrodes on the substrate.

Abstract: A semiconductor device includes a substrate, a pair of semiconductor fins, a dummy fin structure, a gate structure, a plurality of source/drain structures, a crystalline hard mask layer, and an amorphous hard mask layer. The pair of semiconductor fins extend upwardly from the substrate. The dummy fin structure extends upwardly above the substrate and is laterally between the pair of semiconductor fins. The gate structure extends across the pair of semiconductor fins and the dummy fin structure. The source/drain structures are above the pair of semiconductor fins and on either side of the gate structure. The crystalline hard mask layer extends upwardly from the dummy fin and has an U-shaped cross section. The amorphous hard mask layer is in the first hard mask layer, wherein the amorphous hard mask layer having an U-shaped cross section conformal to the U-shaped cross section of the crystalline hard mask layer.

Abstract: A mounting base is provided. The mounting base is adapted to be selectively affixed to different supporting structures. The mounting base includes a mounting base body, a first hook, a second hook and a rotatable member. The first hook is formed on the mounting base body. The second hook is formed on the mounting base body. The rotatable member is pivoted on the mounting base body. The rotatable member is adapted to be rotated between a first orientation and the second orientation relative to the mounting base body. When the rotatable member is in the first orientation, the rotatable member is restricted by the mounting base body. When the rotatable member is in the second orientation, the rotatable member is restricted by the mounting base body.

Abstract: A curved panel includes a first curved substrate, a second curved substrate, a curved coverlens, and an adhesive structure. The first curved substrate and the second curved substrate are overlapped with each other. First to fourth sidewalls of the first curved substrate correspond to fifth to eighth sidewalls of the second curved substrate, respectively. The first to third sidewalls of the first curved substrate extend beyond the fifth to seventh sidewalls of the second curved substrate, respectively. The second curved substrate is located between the curved coverlens and the first curved substrate. The second curved substrate is bonded to the curved coverlens through an adhesive layer. The adhesive structure is located between the first curved substrate and the curved coverlens and is laterally located between the first sidewall and the fifth sidewall, between the second sidewall and the sixth sidewall, and between the third sidewall and the seventh sidewall.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: A metal shielding frame is provided. The metal shielding frame is adapted to be disposed in a socket, wherein the socket is adapted to be electrically connected to a connector. The metal shielding frame includes a sleeve-shaped frame body and at least one ground hemming portion. The sleeve-shaped frame body includes a first enclosed edge. The ground hemming portion is formed on the first enclosed edge. The socket includes a socket case and a socket joint. The socket case surrounds the socket joint. The sleeve-shaped frame body is adapted to be inserted between the socket case and the socket joint.

Abstract: A mounting base is provided. The mounting base is adapted to be selectively affixed to different supporting structures. The mounting base includes a mounting base body, a first hook, a second hook and a rotatable member. The first hook is formed on the mounting base body. The second hook is formed on the mounting base body. The rotatable member is pivoted on the mounting base body. The rotatable member is adapted to be rotated between a first orientation and the second orientation relative to the mounting base body. When the rotatable member is in the first orientation, the rotatable member is restricted by the mounting base body. When the rotatable member is in the second orientation, the rotatable member is restricted by the mounting base body.

Abstract: An electronic device with a heat-dissipation structure is provided. The electronic device includes a housing, a heat-dissipation member, and a restriction member. The housing includes a first sidewall and a second sidewall. The first sidewall includes a first sidewall connection portion. The second sidewall includes a second sidewall connection portion. The heat-dissipation member includes a heat-dissipation member connection portion that is detachably connected to the first sidewall connection portion. The first sidewall connection portion restricts the freedom of movement of the heat-dissipation member connection portion in a first direction. The restriction member is disposed on the heat-dissipation member. The restriction member is wedged into the second sidewall connection portion. The second sidewall connection portion restricts the freedom of movement of the restriction member in the first direction.

Abstract: A bendable antenna is provided. The bendable antenna is adapted to connect a cable. The bendable antenna includes an antenna body, a connection base, a first pivot base, a second pivot base, a first elastic element and a first restriction structure. The connection base is connected to the antenna body. The first pivot base is connected to the connection base, wherein the first pivot base includes a first recess. The second pivot base pivots on the first pivot base. The first elastic element is disposed in the first recess of the first pivot base, wherein the first elastic element is telescoped on the cable. The first restriction structure is connected to the connection base, wherein the first restriction structure pushes the first elastic element to restrict the first elastic element in the first recess.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: An optical identification module including a sensor and a collimator is provided. The sensor has a plurality of sensing regions. The collimator is disposed on the plurality of sensing regions, and the collimator includes a transparent substrate, a first light shielding layer, and a plurality of microlenses. The first light shielding layer includes a plurality of first openings. The plurality of microlenses are disposed on a first surface of the transparent substrate, and the plurality of microlenses correspond to the plurality of first openings respectively.