Abstract: Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract: Systems and methods are disclosed for producing vertical LED array on a metal substrate; evaluating said array of LEDs for defects; destroying one or more defective LEDs; forming good LEDs only LED array suitable for wafer level package.

Abstract: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure and forming heat removal fins thereon; removing the carrier substrate.

Abstract: Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

Abstract: Systems and methods for fabricating a light emitting diode include depositing one or more metal layers on a substrate; forming an n-gallium nitride (n-GaN) layer above the metal layer; and depositing a thermoelectric cooler in the metal layer to dissipate heat.

Abstract: An evaporative cooler apparatus is disclosed. The evaporative cooler apparatus comprises a bottom and a top, where the bottom and the top are identically dimensioned, and where the top and the bottom are interchangeable. The evaporative cooler apparatus further comprises a U-shaped vertical element disposed between the bottom and the top, where that vertical element comprises a porous material. The evaporative cooler apparatus does not comprise one or more metal or plastic sides formed to include a plurality of apertures.

Abstract: In deposition of a quantum well structure for a light emitting diode, each well layer is formed by a two-phase process. In a first phase, relatively high flux rates of gallium and indium are employed. In the second phase, lower flux rates of gallium and indium are used. The well layer is formed with a composition which varies across the horizontal extent of the layer, and which typically includes clusters of indium-enriched material surrounded by regions of indium-poor material. The resulting structure exhibits enhanced brightness and a narrow, well-defined emission spectrum.