Abstract: The power generation and transmission device and method is able to be used to harness power such as solar and/or wind power and then transmit the power to a device on the other side of a physical structure such as a house, a car, a umbrella, a tent, and an awning.

Abstract: The medication usage monitoring and reminding device and method enables a user to easily monitor usage of medications by weighing the medications using a weighing component, a processing component and an I/O component. Additionally, the device is able to remind a user regarding the medications if the medication has not been timely taken. The device is also able to obtain information regarding medications such as possible conflicts, updates and other information. The device is able to be used for food/drink information or dietary information.

Abstract: The medication usage monitoring and reminding device and method enables a user to easily monitor usage of medications by weighing the medications using a weighing component, a processing component and an I/O component. Additionally, the device is able to remind a user regarding the medications if the medication has not been timely taken. The device is also able to obtain information regarding medications such as possible conflicts, updates and other information. The device is able to be used for food/drink information or dietary information.

Abstract: The medication usage monitoring and reminding device and method enables a user to easily monitor usage of medications by weighing the medications using a weighing component, a processing component and an I/O component. Additionally, the device is able to remind a user regarding the medications if the medication has not been timely taken. The device is also able to obtain information regarding medications such as possible conflicts, updates and other information. The device is able to be used for food/drink information or dietary information.

Abstract: The power generation and transmission device and method is able to be used to harness power such as solar and/or wind power and then transmit the power to a device on the other side of a physical structure such as a house, a car, a umbrella, a tent, and an awning.

Abstract: The power generation and transmission device and method is able to be used to harness power such as solar and/or wind power and then transmit the power to a device on the other side of a physical structure such as a house, a car, a umbrella, a tent, and an awning.

Abstract: An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Abstract: An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Abstract: An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Abstract: An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises an ESD detection circuit and a STLBJT device. The STLBJT device formed in a P-type substrate includes N-type collector and emitter regions coupled to the power rails, respectively. The substrate region between the collector and emitter regions, on which there is no field oxide device, serves as a base of the STLBJT device. The STLBJT device further includes a first P-type region coupled to the ESD detection circuit and a second P-type region coupled to one of the power rails, which are spatially separated from the collector/emitter regions, respectively. The STLBJT device is turned on by substrate-triggering responsive to the signal coming from the ESD detection circuit and establishes the discharging path between the power rails.

Abstract: An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises an ESD detection circuit and a STLBJT device. The STLBJT device formed in a P-type substrate includes N-type collector and emitter regions coupled to the power rails, respectively. The substrate region between the collector and emitter regions, on which there is no field oxide device, serves as a base of the STLBJT device. The STLBJT device further includes a first P-type region coupled to the ESD detection circuit and a second P-type region coupled to one of the power rails, which are spatially separated from the collector/emitter regions, respectively. The STLBJT device is turned on by substrate-triggering responsive to the signal coming from the ESD detection circuit and establishes the discharging path between the power rails.

Abstract: An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.

Abstract: The power generation and transmission device and method is able to be used to harness power such as solar and/or wind power and then transmit the power to a device on the other side of a physical structure such as a house, a car, a umbrella, a tent, and an awning.

Abstract: The medication usage monitoring and reminding device and method enables a user to easily monitor usage of medications by weighing the medications using a weighing component, a processing component and an I/O component. Additionally, the device is able to remind a user regarding the medications if the medication has not been timely taken. The device is also able to obtain information regarding medications such as possible conflicts, updates and other information. The device is able to be used for food/drink information or dietary information.

Abstract: An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Abstract: An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.

Abstract: An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first fist-type doped region formed in the body and is beneath the source.

Abstract: An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Abstract: A logic-keeping apparatus including a logic judgment unit and a noise-event detection unit is disclosed. When the level at the input terminal of the logic judgment unit is larger than a first level, the output terminal thereof outputs a first logic state; when the level at the input terminal is smaller than a second level, the output terminal thereof outputs a second logic state; when the level at the input terminal is between the first level and the second level, the output terminal thereof keeps the previous logic state. The noise-event detection unit is for detecting whether a noise-event occurs (for example, an ESD event). Wherein, when a noise-even occurs in the system, the noise-event detection unit keeps the level at the input terminal of the logic judgment unit between the first level and the second level.

Abstract: A logic-latching apparatus includes a noise-event detection unit, a combinational logic unit and a latch unit. The noise-event detection unit is used for detecting whether or not a noise-event occurs (for example, an ESD). The latch unit is coupled with the noise-event detection unit and the combinational logic unit for latching the state of the combinational logic unit. When the output of the noise-event detection unit indicates that a noise-event occurs, the latch unit provides the input terminal of the combinational logic unit with a corresponding input signal according to the latched state of the combinational logic unit inside the latch unit to prevent the state of the combinational logic unit from being affected by the noise-event.