Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate.

Abstract: A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.

Abstract: A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.

Abstract: A substrate processing apparatus comprising a housing defining a processing chamber for receiving a substrate therein. Inside the chamber a substrate supporting susceptor, including an upper substrate receiving portion is located. The receiving portion defines a walled pocket dimensioned to receive the substrate therein. When the substrate is so received the walls of the pocket define an annulus with the outer edge of the substrate. Typically the pocket walls are perpendicular to a primary plane of the substrate and are at least as high, and preferably twice as high, as the substrate is thick. At the outer, circumferential edge of the pocket a gas manifold is formed. The manifold is arranged so that, during processing, a gas which can be projected toward the edge of a substrate received in the pocket. This gas moves upwards between the annulus defined between the wall of the pocket and the outer edge of the substrate, thereby preventing processing gas from contacting the edge portion of the substrate.

Abstract: A bottom purge manifold for the gas purge channel of a CVD semiconductor processing chamber provides an obstruction in the purge gas flow from a purge gas passage to the central portion of the processing chamber. The gas flow is restricted by a ring having generally equally spaced holes therethrough obstructing the purge channel opening and retained in the channel by spring loaded retaining flanges. A set of fan-shaped slots carry the purge gas from the openings and direct it towards the center portion of the processing chamber. This manifold produces a generally uniform flow from the gas purge manifold to improve the uniformity of vapor deposition on the wafer's surface.

Abstract: A plasma processing apparatus has a chamber with an open top and a cover plate extending across the open top of the chamber. The cover plate has an opening therethrough. An annular shield of an electrical insulating material is secured to the cover plate around the opening and extends partially across the opening. An aluminum showerhead is within the shield and has holes therethrough through which a gas can pass into the chamber. The showerhead is connected to a source of RF voltage to provide a flow of RF power between the showerhead and an electrode within the chamber. The shield has a plurality of openings therethrough which allows the RF power to flow through the openings from the showerhead to the electrode in the event that the showerhead becomes coated with particles of an insulating material.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.

Abstract: A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.

Abstract: A substrate lifting apparatus for use in a substrate processing apparatus which includes a thermal reactor having a substrate processing chamber and a substrate support located in the chamber. The lifting apparatus consists of a generally circular shaped support with four seats formed therein; four substrate lifting elements, each having a substrate engaging end and a securing tab sized to be received in a seat; a fastener, associated with each lifting element, which secures the tab into the seat; and an adjuster, associated with each lifting element, located between the tab and the seat. When the tab is secured in the seat and the adjuster is operated, the lifting element is caused to move in a plane parallel to a plane formed through the center of the fastener and the adjuster.

Abstract: An apparatus is disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which includes means for urging the front side of the wafer against a faceplate in a vacuum chamber; means for flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and means for forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer.

Abstract: A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.

Abstract: A method and apparatus are disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which comprises urging the front side of the wafer against a faceplate in a vacuum chamber; flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer.

Abstract: An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer of tungsten; maintaining the vacuum chamber at a pressure of from about 20 to 760 Torr to improve the deposition rate of the tungsten, as well as to improve the reflectivity of the tungsten surface; and, when needed, the additional step of forming a nucleation layer on the semiconductor layer prior to the step of depositing tungsten on the semiconductor wafer to improve the uniformity of the deposited tungsten layer.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.

Abstract: A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressure, close electrode spacing and fluorocarbon gas chemistry for etching the electodes locally and the second step uses relatively lower pressure, farther electrode spacing and fluorinated gas chemistry for etching throughout the chamber and exhaust system. The local and extended etch steps may be used separately as well as together.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.