Abstract: A method involves providing a circuit pattern, generating a density report for the circuit pattern that identifies a feasible area for dummy insertion, simulating a planarization process with the density report and identifying a hot spot on the circuit pattern, inserting a virtual dummy pattern in the feasible area and adjusting the density report accordingly, and thereafter simulating the planarization process with the adjusted density until the hot spot is eliminated.

Abstract: A method is disclosed for utilizing mixed low threshold voltage (low-Vt) and high threshold voltage (high-Vt) devices in a cell-based design such that a tradeoff of both the circuit speed and power performance may be achieved. Using cells having non-uniform threshold devices for designing circuit, the speed or/and power optimization is comparable to fully custom designs.

Abstract: A method for detection and scoring of hotspots in a design layout is provided. A plurality of indices is derived for a plurality of positions in the design layout. The plurality of indices comprises a first index sensitive to energy exposure of the design layout, a second index sensitive to process image formation, and a third index sensitive to mask manufacturing error. The plurality of indices is then analyzed to identify at least one hotspot in the design layout. The at least one hotspot is then prioritized using an integrated hotspot scoring system. The integrated hotspot scoring system prioritizes hotspots based on a look-up table approach or an interpolation approach.

Abstract: Methods and systems for providing processing parameters in a secure format are disclosed. In one aspect, a method for providing semiconductor fabrication processing parameters to a design facility is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a model from the set of processing parameters; converting the model into a corresponding set of kernels; converting the set of kernels into a corresponding set of matrices; and communicating the set of matrices to the design facility. In another aspect, a method for providing semiconductor fabrication processing parameters is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a processing model from the set of processing parameters; encrypting the processing model into a format for use with a plurality of EDA tools; and communicating the encrypted processing model format to a design facility.

Abstract: A method is disclosed for utilizing mixed low threshold voltage (low-Vt) and high threshold voltage (high-Vt) devices in a cell-based design such that a tradeoff of both the circuit speed and power performance may be achieved. Using cells having non-uniform threshold devices for designing circuit, the speed or/and power optimization is comparable to fully custom designs.

Abstract: A de-coupling capacitor module using dummy conductive elements in an integrated circuit is disclosed. The de-coupling module comprises at least one circuit module having one or more active nodes, and at least one dummy conductive element unconnected to any active node, and separated from a high voltage conductor or a low voltage conductor by an insulation region to provide a de-coupling capacitance.

Abstract: Methods of supplying voltages to integrated circuits are provided. A high voltage VddH and/or a low voltage VddL can be supplied to a filler cell and routed to other cells. Each of the VddH and VddL is carried by one of a first voltage supply wire and a second voltage supply wire. A voltage routing wire routes desired voltage(s) to a filler cell. The first and the second voltage supply wires are preferably formed parallel to the voltage routing wire with their edges substantially aligned to the edges of the voltage routing wire. Vias are made to route the desire voltage. Also preferably, the first voltage supply wire is an M1 wire formed outside the filler cell while the second voltage supply wire is an M2 wire formed inside the filler cell.

Abstract: A de-coupling capacitor module using dummy conductive elements in an integrated circuit is disclosed. The de-coupling module comprises at least one circuit module having one or more active nodes, and at least one dummy conductive element unconnected to any active node, and separated from a high voltage conductor or a low voltage conductor by an insulation region to provide a de-coupling capacitance.

Abstract: A method is disclosed for utilizing mixed low threshold voltage (low-Vt) and high threshold voltage (high-Vt) devices in a cell-based design such that a tradeoff of both the circuit speed and power performance may be achieved. Using cells having non-uniform threshold devices for designing circuit, the speed or/and power optimization is comparable to fully custom designs.

Abstract: A de-coupling capacitor module using dummy conductive elements in an integrated circuit is disclosed. The de-coupling module comprises at least one circuit module having one or more active nodes, and at least one dummy conductive element unconnected to any active node, and separated from a high voltage conductor or a low voltage conductor by an insulation region to provide a de-coupling capacitance.

Abstract: A method for synthesizing a clock distribution system within an integrated circuit for compensating for clock skew within a global or top level clock distribution network begins with allocating at least one delaying circuit within each of functional circuits of the integrated circuit. An intra-functional clock distribution network is fabricated within each of the functional circuits. Once the intra-functional clock distribution network is fabricated, an inter-functional clock distribution network is constructed between each of the functional circuits. A clock skew for the inter-functional clock distribution network is determined. The clock skew is then compensated by inserting the delaying circuit at a terminal of the inter-function clock distribution network where each of the functional circuits is connected to the inter-functional clock distribution network.

Abstract: Methods of supplying voltages to integrated circuits are provided. A high voltage VddH and/or a low voltage VddL can be supplied to a filler cell and routed to other cells. Each of the VddH and VddL is carried by one of a first voltage supply wire and a second voltage supply wire. A voltage routing wire routes desired voltage(s) to a filler cell. The first and the second voltage supply wires are preferably formed parallel to the voltage routing wire with their edges substantially aligned to the edges of the voltage routing wire. Vias are made to route the desire voltage. Also preferably, the first voltage supply wire is an M1 wire formed outside the filler cell while the second voltage supply wire is an M2 wire formed inside the filler cell.

Abstract: A method for synthesizing a clock distribution system within an integrated circuit for compensating for clock skew within a global or top level clock distribution network begins with allocating at least one delaying circuit within each of functional circuits of the integrated circuit. An intra-functional clock distribution network is fabricated within each of the functional circuits. Once the intra-functional clock distribution network is fabricated, an inter-functional clock distribution network is constructed between each of the functional circuits. A clock skew for the inter-functional clock distribution network is determined. The clock skew is then compensated by inserting the delaying circuit at a terminal of the inter-function clock distribution network where each of the functional circuits is connected to the inter-functional clock distribution network.

Abstract: A new method to route a metal line in the layout of an integrated circuit device is achieved. The method comprises providing a layout for an integrated circuit device comprising an array of placed standard cells. Contact/via layer polygons are placed for coupling the standard cells. A line is routed in a metal layer. An antenna effect value is calculated for the line using parameters previously determined from the layout of each the standard cell. The parameters comprise gate area, diode area, metal area, and contact/via area coupled to the line. The gate area, the diode area, the metal area, and the contact/via area are segregated by metal level. The steps of routing and calculating are repeated if the antenna effect value exceeds a specified value. A method to extract parameters is disclosed.

Abstract: Flexible routing channels among vias is disclosed. A semiconductor device of one embodiment includes a number of metal layers, a number of dielectric layers, a number of via holes, and a number of routing channels. The metal layers are organized along a vertical axis. The dielectric layers are alternatively positioned relative to the metal layers. The via holes are situated within the dielectric layers and electrically connect a lower layer of the metal layers to an upper layer of the metal layers. The routing channels are situated within the metal layers and provide for electrical routing through the device along at least one of two horizontal axes of a horizontal plane perpendicular to the vertical axis.

Abstract: A method and system for the design of an electronic device adjusts the resistance and capacitance values employed in preliminary timing analysis during physical synthesis of the electronic device. The physical synthesis uses resistance and capacitance unit values to determine the listing of the component circuits. The resistance and capacitance unit values are calibrated by preliminarily placing the initially synthesized component circuits to create a listing describing physical locations of the component circuits within the electronic device. A preliminary routing of the interconnections is performed to create a listing describing a network of physical wire segments that form each interconnection of the component circuits. A timing analysis of the electronic device determines the delay created by the component circuit and the networks of physical wire segments.

Abstract: Flexible routing channels among vias is disclosed. A semiconductor device of one embodiment includes a number of metal layers, a number of dielectric layers, a number of via holes, and a number of routing channels. The metal layers are organized along a vertical axis. The dielectric layers are alternatively positioned relative to the metal layers. The via holes are situated within the dielectric layers and electrically connect a lower layer of the metal layers to an upper layer of the metal layers. The routing channels are situated within the metal layers and provide for electrical routing through the device along at least one of two horizontal axes of a horizontal plane perpendicular to the vertical axis.

Abstract: A method for generating technology data files for use by at least one chip and circuit analysis tools begins by accepting a user analysis request for a specific chip and circuit analyses. The design automation tool required for the requested analysis is then selected. A standard, generic technology data file(TDF) is converted to a custom TDF specified for a given design analysis tool from a set of TDF formatting rules for the given design analysis tool. The chip coordinate references, process parameters and line segment layout data to be tested are extracted from a physical design data layout file. The line segment layout data of a standard wafer test site for the foundry/process selected is extracted from a circuit simulation model of the desired foundry/process. The design automation tool is executed using the foundry/process and line segment layout data as requested in the user analysis request.