Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.

Abstract: An illumination system has a microLED array 502. The microLED array 502 is imaged or placed very close to a phosphor coated glass disc 504 which upconverts the light from the microLED array into a narrow band emission. The plate has at least two different photoluminescent materials arranged to be illuminated by the microLED array and to thereby emit output light. The different photoluminescent materials have different emission spectral properties of the output light, e.g. different center wavelength and optionally different bandwidth. Illumination of different photoluminescent materials by the illumination sources is selectable, by selective activation of the microLEDs or by movement of the photoluminescent materials relative to the illumination sources, to provide different illumination of the different photoluminescent materials. This provides tunable spectral properties of the output light.

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Abstract: A method and apparatus to provide a plurality of radiation beams modulated according to at least two sub patterns of a pattern using radiation sources, the radiation sources producing radiation beams of at least two spot sizes such that each of the radiation beams having a same spot size of the at least two spot sizes is used to produce one of the at least two sub patterns, project the plurality of beams onto a substrate, and provide relative motion between the substrate and the plurality of radiation sources, in a scanning direction to expose the substrate. A method and apparatus to provide radiation modulated according to a desired pattern using a plurality of rows of two-dimensional arrays of radiation sources, project the modulated radiation onto a substrate using a projection system, and remove fluid from between the projection system and the substrate using one or more fluid removal units.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: An X-ray detector (1) includes a light detection arrangement (3) such as a CMOS photodetector, a scintillator layer (5) such as a CsI:Tl layer, a reflector layer (9) and a light emission layer (7) interposed between the scintillator layer (5) and the reflector layer (9). The light emission layer (7) may include an OLED and may have a thickness of less than 50 ?m. Thereby, a sensitivity and resolution of the X-ray detector may be improved.

Abstract: An illumination system has a microLED array 502. The microLED array 502 is imaged or placed very close to a phosphor coated glass disc 504 which upconverts the light from the microLED array into a narrow band emission. The plate has at least two different photoluminescent materials arranged to be illuminated by the microLED array and to thereby emit output light. The different photoluminescent materials have different emission spectral properties of the output light, e.g. different center wavelength and optionally different bandwidth. Illumination of different photoluminescent materials by the illumination sources is selectable, by selective activation of the microLEDs or by movement of the photoluminescent materials relative to the illumination sources, to provide different illumination of the different photoluminescent materials. This provides tunable spectral properties of the output light.

Abstract: The invention relates to an illumination system comprising a light emitting device and a beam shaping element for generating an angular distribution of the light emitted from the illumination system. The beam shaping element is configured for recycling at least a part of the light emitted from a light emitting surface of the light emitting device via reflection back towards the light emitting surface. The illumination system further comprises a diffuser arranged substantially parallel to the light emitting surface for diffusing at least part of the recycled light. The diffuser is constituted of a translucent diffuser and/or a diffusely reflective electrode layer of the light emitting device. Limiting the angular distribution by recycling light, using the beam shaping element for recycling light via reflection, reduces glare when the illumination system is used in general lighting applications.

Abstract: A microelectronic sensor device for the detection of target components with label or magnetic particles includes a carrier with a binding surface at which target components can collect and optionally bind to specific capture elements. An input light beam is transmitted into the carrier and totally internally reflected at the binding surface. The amount of light in the output light beam is detected by a light detector. Evanescent light generated during the total internal reflection is affected by target components and/or label particles at the binding surface and will be missing in the output light beam. This is used to determine the amount of target components at the binding surface from the amount of light in the output light beam. A magnetic field generator is optionally used to generate a magnetic field at the binding surface by which magnetic label particles can be manipulated, such as attracted or repelled.

Abstract: A light emitting module includes at least one LED mounted on a reflective base and surrounded by reflective walls to form a cavity. A partially diffusive layer containing a phosphor is mounted above the LED with a gap therebetween. Some of the light emitted by the phosphor is backscattered toward the LED, base, and walls. The LED absorbs a significant amount of the light, while the reflective base and walls efficiently reflect over 90% of the light back toward the phosphor layer for exiting the module. Various equations are provided that allow the designer to select an optimal gap between the LED and the partially diffusive layer to maximize light extraction efficiency out of the diffusive layer. The optimal gap range for maximizing light extraction efficiency is a product of LED largest linear length, LED surface area, base area, wall area, and reflective coefficients of the various elements.

Abstract: A method is presented for reducing the light output capacity of light emitting components (C1, C2, C3), each with a different absorption band, of an OLED device (1). By irradiating at least a portion of each light emitting component (C1, C2, C3) with light (L) having a wavelength within at least one of the absorption bands, the light output capacity of the irradiated portion (P, P1, P2, P3) of each organic light emitting component having a light absorption band in which the wavelength of the light (L) is included is reduced. An OLED device (1) is also presented.

Abstract: The invention relates to a method for the detection of target components that comprise label particles, for example magnetic particles (1). The method includes (a) collecting the target components at a binding surface (12, 112, 512) of a carrier (11, 111, 211, 311, 411, 511); (b) directing an input light beam (L1, L1a, L1b) into the carrier such that it is totally internally reflected in an investigation region (13, 313a, 313b) at the binding surface (12, 112, 512); and (c) determining the amount of light of an output light beam (L2, L2a, L2b) that comprises at least some of the totally internally reflected light. Evanescent light generated during the total internal reflection is affected (absorbed, scattered) by target components and/or label particles (1) at the binding surface (12) and will therefore be missing in the output light beam (L2). This can be used to determine the amount of target components at the binding surface (12) from the amount of light in the output light beam (L2, L2a, L2b).

Abstract: The invention relates to a carrier with a binding surface at which target components that comprise label particles, for example magnetic particles, can collect and optionally bind to specific capture elements. An input light beam (L1) is transmitted into the carrier and totally internally reflected at the binding surface. The amount of light in the output light beam (L2) and optionally also of fluorescence light emitted by target components at the binding surface is then detected by a light detector. Evanescent light generated during the total internal reflection is affected (absorbed, scattered) by target components and/or label particles at the binding surface and will therefore be missing in the output light beam (L2). This can be used to determine the amount of target components at the binding surface from the amount of light in the output light beam (L2, L2a, L2b).

Abstract: A light emitting module 150 emits light through a light exit window 104 and comprises a base 110, a solid state light emitter 154, 156 and a partially diffusive reflective layer 102. The base 110 has a light reflective surface 112 which faces towards the light exit window 104. The light reflective surface 112 has a base reflection coefficient Rbase which i defined by a ratio between the amount of light that is reflected by the light reflective surface and the amount of light that impinges on the light reflective surface. The solid state light emitter 154, 156 emits light of a first color range 114, comprises a top surface 152, 158 and has a solid state light emitter reflection coefficient R_SSL which is defined by a ratio between the amount of light that is reflected by the solid state emitter 154, 156 and the amount of light that impinges on the top surface 152, 158 of the solid state light emitter 154, 156. The light exit window 104 comprises at least a part of the partially diffusive reflective layer 102.

Abstract: A light emitting module (150) emits light through a light exit window (104) and comprises a base (110), a solid state light emitter (154, 158) and a partially diffusive reflective layer (102). The base (110) has a light reflective surface (112) which faces towards the light exit window (104). The light reflective surface (112) has a base reflection coefficient Rbase which is defined by a ratio between the amount of light that is reflected by the light reflective surface and the amount of light that impinges on the light reflective surface. The solid state light emitter (154, 158) emits light of a first color range (114), comprises a top surface (152, 158) and has a solid state light emitter reflection coefficient R_SSL which is defined by a ratio between the amount of light that is reflected by the solid state emitter (154,156) and the amount of light that impinges on the top surface (152, 158) of the solid state light emitter (1154, 156).

Abstract: The present invention relates to an organic light emitting device (OLED) (100;200;400;800;900;1000;1100;1200) comprising a first substrate layer (101;201;401;501;701;1004;1104;1205) and a second substrate layer(102;202; 402;502;704; 1005;1105;1206). The device (100;200;400;800;900;1000;1100;1200) further comprises at least a first OLED assembly (103;403;503;901;1001;1101;1202) and a second OLED assembly (104;404;504;902;1002;1102;1203) arranged between the first and the second substrate layers. Each of the first and second OLED assemblies comprises a first electrically conductive layer(105;505;703), a second electrically conductive layer (106;506;706) and an organic light emitting layer (107;507;507?;707) arranged between the first and the second electrically conductive layer. The organic light emitting device (100;200;400;800;900;1000;1100;1200) of the invention allows for an increased light intensity and is suitable for large area applications.

Abstract: An OLED has a characteristic threshold voltage (V2) above which the OLED is to be considered ON. A method for driving an OLED (20) includes the steps of switching the OLED on and off. According to the invention, a method for driving an OLED (20) includes of avoiding driving the OLED within a voltage range between zero and a predetermined voltage level (Vx) higher than zero, wherein this predetermined voltage level (Vx) may be in the order of said characteristic threshold voltage (V2). As a result, damage to the OLED is prevented or reduced, resulting in increased reliability of the OLED in terms of life time expectancy.

Abstract: It is presented an organic LED device 101 with, when in use, a predetermined pattern on its light emitting parts. The organic LED device 101 comprises an anode 105, a cathode 103, and an organic light emitting layer 107. The organic light emitting layer 107 is configured to emit light, wherein the organic light emitting layer 107 comprises portion with reduced light emitting properties, the portions of the organic light emitting layer 107 having been irradiated by light with a wavelength in the absorption band of the organic light emitting layer 107, the light intensity being below an ablation threshold of the cathode layer 103, the anode layer 105 and the organic light emitting layer 107 of the organic LED device 101, reducing the light emitting properties of the irradiated portions of the organic light emitting layer 107. It is also presented a method for reducing the light emitting properties of the organic LED device 101.