Abstract: A bolometric detector of a terahertz electromagnetic radiation, including at least one bolometric microbridge suspended above a support. The microbridge includes: radiation collection means for collecting the electromagnetic radiation, including at least one pair of antennas; resistive means resistively coupled with the collection means, including an individual resistive load resistively coupled with each antenna; thermometric means, thermally coupled with the resistive means, electrically insulated from the collection means and the resistive means.

Abstract: An electronic device includes a heat source, a heat-absorbing cold point, a thermally insulating material for insulating the heat source from the cold point with a conductivity at a use-temperature of electronic device, that is below a thermal-conductivity threshold, and a thermal bridge having first and second ends connected by pads to the heat source and the cold point, and a thermal switch. The thermal bridge extends between the two ends and switches reversibly between conductive and non-conductive states. It includes material of variable thermal conductivity capable of switching over, in response to an addition of energy, between a conductive phase and a resistive phase, and a control module for causing the thermal switch to switch between the conductive state and the resistive state.

Abstract: A bolometric detector of a terahertz radiation, including: an assembly reflective for said electromagnetic radiation; at least one bolometric microbridge suspended above the reflective assembly and including a first bowtie antenna, a resistive load coupled with said antenna, and a thermometric element coupled with the resistive load. The reflective assembly includes: a reflective layer; an insulating layer on the reflective layer; a periodic array of metallic patterns on the insulating layer, the thickness and the dielectric permittivity of the insulating layer, and the pitch and the filling factor of the array being selected to obtain a constructive interference at the level of said microbridge.

Abstract: A digital-to-analogue converter, with application to electronic circuits with neuromorphic architecture, comprises: transistors of identical nominal geometrical characteristics, but of dispersed current-voltage characteristics, wherein when a constant gate-source voltage is applied to the different transistors, a current varying as a function of the dispersion circulates in the transistor; a digital table receiving a digital word and having a selection output selecting, as a function of the word to be converted, a transistor or transistors supplying a current of desired value representing this word in analogue form. The look-up table is loaded as a function of real measured current-voltage characteristics of different transistors of the set, to establish a look-up between words and current values.

Abstract: A magnetic field sensor has a magnetoresistive rod having a stack of stacked layers that include a pinned layer having a fixed magnetization direction almost perpendicular to a longitudinal direction, a free layer comprising a magnetostrictive material having a coefficient of magnetostriction greater than 20 ppm to 25° C. and a longitudinal axis of easiest magnetization, the magnetization changing when the free layer is exposed to a magnetic field, a non-magnetic spacer layer interposed between the free and pinned layers to form a tunnel junction or spin valve, and a stress-generating layer for exerting uniaxial stress essentially such that a product of stress and magnetostriction coefficient is greater than 500 ppm·MPa at 25° C. The rod's length is at least ten times its greatest width.

Abstract: A thermal plasma, advantageously inductive, is used to purify silicon from sawing slurries. For this purpose, a thermal plasma is generated; sawing slurries containing silicon are submitted to the thermal plasma, to form the silicon deposit on the substrate.

Abstract: A method for making a structure comprising an active part comprising at least two layers from a first single crystal silicon substrate, said method comprising the steps of: a) making at least one porous silicon zone in the first substrate, b) making an epitaxial growth deposition of a single crystal silicon layer on the entire surface of the first substrate and the surface of the porous silicon zone, c) machining the epitaxially grown single crystal layer at the porous silicon zone to make a first suspended zone, d) removing or oxidizing the porous silicon, e) depositing a sacrificial layer being selective towards silicon, f) machining the first substrate, g) releasing the suspended zones by withdrawing the sacrificial layer.

Abstract: The invention relates to a method for producing a graphene sheet on a platinum silicide, wherein the platinum silicide is in the form of a layer or a plurality of pins. This method comprises: a) producing a stack by (i) depositing a layer C1 of a diffusion barrier material on a substrate; (ii) depositing, on the layer C1, a layer C2 of a carbon-containing material, wherein said carbon-containing material optionally comprises silicon; (iii) depositing, on the layer C2, a layer C3 of platinum; (iv) depositing a layer C4 of a material of formula SiaCbHc on the layer C3 if the carbon-containing material of the layer C2 is free from silicon; and b) heat-treating the stack obtained at step a). It also relates to structures obtained using this method and the uses of these structures. Applications: manufacture of micro- and nanoelectronic devices, micro- and nanoelectromechanical devices, etc.

Abstract: In the inkjet printing method according to the invention, ink is ejected at a temperature lower than or equal to 20° C., advantageously ranging between ?20° C. and 20° C. The corresponding device comprises a temperature regulation system selected from among: a system for cooling the ink reservoir; a system for cooling the nozzles, advantageously with an in situ Peltier effect; a climatic chamber, advantageously at controlled temperature and humidity, intended to receive the printing device or the nozzles only.

Abstract: A system for designing digital circuitry comprising: a digital circuit simulator based on a file containing a functional description of this digital circuit; means for estimating an output variable from the digital circuit when executing a test bench supplied to the simulator; event counters, the events being detected using control signals provided by the simulator when executing the test bench. Said system further comprises means for selecting a portion of the event counters by iteratively optimizing a model for calculating the output variable of the digital circuit using output data from the event counters and means for registering the selected portion of event counters and the optimized calculation model.

Abstract: Method for preparing p-type zinc oxide ZnO or p-type ZnMgO, comprising at least the sequence of the following two steps a) and b): a) depositing silica, optionally doped with at least one doping element from column V of the periodic table of the elements, on a surface of an n-type ZnO or n-type ZnMgO substrate; b) annealing the substrate and the deposited silica at a sufficient temperature and for a sufficient time to induce exodiffusion of zinc from the ZnO or ZnMgO substrate to the silica, and the formation of zinc vacancies in at least one portion of the substrate adjacent to the silica; and a step for doping said portion of the substrate adjacent to the silica and comprising the zinc vacancies with at least one doping element from column V of the periodic table of the elements during step b) or at the conclusion of step b).

Abstract: The invention relates to a microfluidic device and a method for handling at least one drop. The device comprises first and second microfluidic surfaces (3a, 3b) parallel and separated from each other by a separation distance (H), at least one first electrical displacement path (5a) arranged on said first surface (3a), and at least one second electrical displacement path (5b) arranged on said second surface (3b). The at least one of the first and second paths is configured in order to form a respective fluidic finger along said path, said fluidic finger rupturing via capillarity, by generating at least one respective drop. The first and second paths are configured so that said separation distance between said first and second surfaces is on the one hand, greater than the fluidic thickness formed by each fluidic finger and, on the other hand, less than the fluidic thickness formed by each drop.

Abstract: An image sensor device comprising at least one transistor lying on a semiconductor-on-insulator substrate, the substrate comprising a thin semi-conducting layer wherein a channel area of said transistor is made, an insulating layer separating the thin semi-conducting layer with a semi-conducting support layer, the device being characterized in that the semi-conducting support layer comprises at least one photosensitive area including at least one P-doped region and at least one N-doped region forming a junction provided facing the channel area of said transistor.

Abstract: An optoelectronic device includes: an active semiconductor area (84) for the radiative recombination of electron-hole pairs made in the form of at least one nanowire made of an unintentionally doped semiconductor material; a semiconductor area (88) for the radial injection of holes into the or each nanowire, made of a doped semiconductor material having a first conductivity type and a bandgap smaller than the bandgap of the material forming the nanowire; and a semiconductor area (82) for the axial injection of electrons into the or each nanowire, made of a doped semiconductor material having a second conductivity type opposite to the first conductivity type.

Abstract: A light-emitting microelectronic device including a first N-type transistor (T1) and a second P-type transistor (T2), the respective gates of which are formed opposite one another, either side of an intrinsic semiconductor material region.

Abstract: The present invention relates to a method for manufacturing a semiconductor device by wet-process chemical etching, the device comprising at least one layer of silicon (Si) and at least one layer of silicon-germanium (SiGe) and at least one layer of photosensitive resin forming a mask partly covering the layer of silicon-germanium (SiGe) and leaving the layer of silicon-germanium uncovered in certain zones, characterized in that it comprises a step of preparation of an etching solution, having a pH between 3 and 6, from hydrofluoric acid (HF), hydrogen peroxide (H2O2), acetic acid (CH3COOH) and ammonia (NH4OH), and a step of stripping of the layer of silicon-germanium (SiGe) at least at the said zones by exposure to the said etching solution. The invention will be applicable for the manufacture of integrated circuits and more precisely of transistors. In particular, for optimization of CMOS transistors of the latest generation.

Abstract: A power device comprises an output port and at least one first acoustic pathway and one second acoustic pathway, each acoustic pathway comprising at least one first input acoustic wave transducer connected to an input port, and an output acoustic wave transducer connected to the output port. Each acoustic pathway further comprises a floating acoustic wave transducer connected to a floating port; the input transducer and the output transducer being separated by a distance equal to (2m+1)?/4 with m an integer and ? the propagation wavelength; the input transducer and the floating transducer being separated by a distance equal to (2n+1) ?/2 with n an integer; each output transducer being connected to the output port, said power device being a combiner.

Abstract: A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.

Abstract: A memory cell is provided with a transistor which includes source and drain electrodes formed in a semiconductor film by respectively N-doped and P-doped areas. The transistor includes first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are shifted laterally and are opposed to the passage of the charge carriers emitted by the nearest source/drain electrode. One of the devices for generating the potential barrier is electrically connected to the gate. The other of the devices for generating the potential barrier is electrically connected to the counter-electrode. The writing of a high state is carried out by imposing on the P-doped electrode a potential higher than that of the N-doped electrode and charging the capacitor formed between the gate and the semiconductor film. The resetting of the memory cell is obtained by discharging the capacitor.

Abstract: A method for manufacturing an organic semiconductor layer formed of a mixture of a first and of a second organic semiconductor materials includes the steps of: forming a porous solid volume formed of the first semiconductor material, of intercommunicating porosity and capable of receiving a second semiconductor material; depositing, at least on an external surface of the porous solid volume, a liquid including the second semiconductor material dissolved or dispersed in a solvent, the solvent being inert with respect to the first semiconductor material and having an evaporation temperature lower than the evaporation temperature of the second semiconductor material; and once the porous solid volume has been at least partially impregnated with the liquid, evaporating the solvent by heating up to a temperature higher than the evaporation temperature of said solvent and lower than the evaporation temperature of the first and of the second semiconductor materials.