Abstract: A method for implementing a wet clean process includes cleaning one or more trenches formed in an interlevel dielectric by applying a two-phase cleaning solution. Applying the two-phase cleaning solution includes applying a first component of the two-phase cleaning solution including a diluted acid solution, and reducing capillary force during drying by applying a second component of the two-phase cleaning solution including a chemistry that is less dense than the first component.

Abstract: According to embodiments of the present invention, a semiconductor wafer includes a substrate and an interlayer dielectric located on the substrate. The interlayer dielectric includes an interconnect. A barrier layer is located in between the interconnect and the interlayer dielectric. A semi-liner layer is located in between the interconnect and the barrier layer. The interlayer dielectric, the interconnect, and barrier layer form a substantially planar surface opposite the substrate. The interconnect has an interconnect height from a base to the substantially planar surface and a semi-liner height of the semi-liner layer is less than the interconnect height such that liner layer does not extend to the planar surface.

Abstract: A method is presented for post chemical mechanical polishing (PCMP) clean for cleaning a chemically-mechanically polished semiconductor wafer. The method includes planarizing the semiconductor wafer, subjecting the semiconductor wafer to a de-oxygenated mixture of DI water and PCMP solution, and applying a de-oxygenated environment during the cleaning. The solution can be de-oxygenated by nitrogen degas or by introducing a reducing agent. The environment can be de-oxygenated by purging with an inert gas, such as nitrogen.

Abstract: A semiconductor device includes one or more interconnects and one or more cap layers disposed on respective ones of the one or more interconnects. The one or more cap layers include a material that has properties permitting selective deposition on the one or more interconnects.

Abstract: A method for back end of line (BEOL) integration for one or more interconnects includes forming one or more interconnects by depositing conductive material on a diffusion barrier layer in respective ones of one or more trenches formed within an interlevel dielectric, forming one or more cap layers on respective ones of the one or more interconnects, and selectively etching the diffusion barrier relative to the one or more cap layers to remove portions of the diffusion barrier layer along the interlevel dielectric.

Abstract: A method for implementing a wet clean process includes cleaning one or more trenches formed in an interlevel dielectric by applying a two-phase cleaning solution. Applying the two-phase cleaning solution includes applying a first component of the two-phase cleaning solution including a diluted acid solution, and reducing capillary force during drying by applying a second component of the two-phase cleaning solution including a chemistry that is less dense than the first component.

Abstract: A method for back end of line (BEOL) integration for one or more interconnects includes forming one or more interconnects by depositing conductive material on a diffusion barrier layer in respective ones of one or more trenches formed within an interlevel dielectric, forming one or more cap layers on respective ones of the one or more interconnects, and selectively etching the diffusion barrier relative to the one or more cap layers to remove portions of the diffusion barrier layer along the interlevel dielectric.

Abstract: According to embodiments of the present invention, a semiconductor wafer includes a substrate and an interlayer dielectric located on the substrate. The interlayer dielectric includes an interconnect. A barrier layer is located in between the interconnect and the interlayer dielectric. A semi-liner layer is located in between the interconnect and the barrier layer. The interlayer dielectric, the interconnect, and barrier layer form a substantially planar surface opposite the substrate. The interconnect has an interconnect height from a base to the substantially planar surface and a semi-liner height of the semi-liner layer is less than the interconnect height such that liner layer does not extend to the planar surface.

Abstract: A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.

Abstract: A method for reworking a semiconductor device includes, in a pattern stack formed on an interlevel dielectric (ILD) layer, polishing the pattern stack to remove a top hardmask layer of the pattern stack. Each hardmask layer of the pattern stack is selectively wet etched to remaining layers of the pattern stack and the ILD layer. A reworked pattern stack is reformed on the ILD layer.

Abstract: A method is presented for post chemical mechanical polishing (PCMP) clean for cleaning a chemically-mechanically polished semiconductor wafer. The method includes planarizing the semiconductor wafer, subjecting the semiconductor wafer to a de-oxygenated mixture of DI water and PCMP solution, and applying a de-oxygenated environment during the cleaning. The solution can be de-oxygenated by nitrogen degas or by introducing a reducing agent. The environment can be de-oxygenated by purging with an inert gas, such as nitrogen.

Abstract: A method is presented for post chemical mechanical polishing (PCMP) clean for cleaning a chemically-mechanically polished semiconductor wafer. The method includes planarizing the semiconductor wafer, subjecting the semiconductor wafer to a de-oxygenated mixture of DI water and PCMP solution, and applying a de-oxygenated environment during the cleaning. The solution can be de-oxygenated by nitrogen degas or by introducing a reducing agent. The environment can be de-oxygenated by purging with an inert gas, such as nitrogen.

Abstract: A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.

Abstract: A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.

Abstract: A method for reworking a semiconductor device includes, in a pattern stack formed on an interlevel dielectric (ILD) layer, polishing the pattern stack to remove a top hardmask layer of the pattern stack. Each hardmask layer of the pattern stack is selectively wet etched to remaining layers of the pattern stack and the ILD layer. A reworked pattern stack is reformed on the ILD layer.

Abstract: Aspects of the present disclosure provide a method of cleaning a semiconductor device. The method includes providing a semiconductor wafer having an exposed cobalt surface and rinsing the exposed cobalt surface with cathode water having a pH greater than 9 and an oxidation reduction potential of less than 0.0.

Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.

Abstract: A method for forming interconnect structures includes forming a barrier material over a dielectric layer having a trench, the barrier layer being disposed on sidewalls and horizontal surfaces of the trench, depositing an interconnect layer over the barrier layer to form an interconnect structure, recessing the interconnect layer down to a surface of the barrier layer using a chemical mechanical planarization process, and planarizing the barrier layer and the interconnect layer using a wet etch process to form a coplanar surface to prevent dishing or divots in the interconnect structure.

Abstract: A method for forming interconnect structures includes forming a barrier material over a dielectric layer having a trench, the barrier layer being disposed on sidewalls and horizontal surfaces of the trench, depositing an interconnect layer over the barrier layer to form an interconnect structure, recessing the interconnect layer down to a surface of the barrier layer using a chemical mechanical planarization process, and planarizing the barrier layer and the interconnect layer using a wet etch process to form a coplanar surface to prevent dishing or divots in the interconnect structure.

Abstract: A method for forming interconnect structures includes forming a barrier material over a dielectric layer having a trench, the barrier layer being disposed on sidewalls and horizontal surfaces of the trench, depositing an interconnect layer over the barrier layer to form an interconnect structure, recessing the interconnect layer down to a surface of the barrier layer using a chemical mechanical planarization process, and planarizing the barrier layer and the interconnect layer using a wet etch process to form a coplanar surface to prevent dishing or divots in the interconnect structure.