Patents by Inventor Cornelius B. Peethala

Cornelius B. Peethala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELECTIVE AND NON-SELECTIVE BARRIER LAYER WET REMOVAL
    Publication number: 20170317026
    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.
    Type: Application
    Filed: July 20, 2017
    Publication date: November 2, 2017
    Inventors: Benjamin D. Briggs, Elbert E. Huang, Raghuveer R. Patlolla, Cornelius B. Peethala, David L. Rath, Hosadurga Shobha
  • Selective and non-selective barrier layer wet removal
    Patent number: 9806023
    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: October 31, 2017
    Assignee: International Business Machines Corporation
    Inventors: Benjamin D. Briggs, Elbert E. Huang, Raghuveer R. Patlolla, Cornelius B. Peethala, David L. Rath, Hosadurga Shobha
  • SELECTIVE AND NON-SELECTIVE BARRIER LAYER WET REMOVAL
    Publication number: 20170301624
    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.
    Type: Application
    Filed: February 28, 2017
    Publication date: October 19, 2017
    Inventors: Benjamin D. Briggs, Elbert E. Huang, Raghuveer R. Patlolla, Cornelius B. Peethala, David L. Rath, Hosadurga Shobha
  • Selective and non-selective barrier layer wet removal
    Patent number: 9685406
    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: June 20, 2017
    Assignee: International Business Machines Corporation
    Inventors: Benjamin D. Briggs, Elbert E. Huang, Raghuveer R. Patlolla, Cornelius B. Peethala, David L. Rath, Hosadurga Shobha