Abstract: Polymer film having at least two regions of differing translucency. The at least two regions of differing translucency can be obtained by selectively compressing regions of the polymer film. Laminate comprising textile material and such a polymer film. The laminates can be breathable and/or waterproof. Suitable uses for the laminate include, for example, garments, tents, and sleeping bags.

Abstract: A stopper for use in a substantially cylindrical bottle opening is disclosed. The stopper is made of a natural cork body with a polymeric portion to prevent flavor scalping and seal the bottle opening. The stopper of the present invention is designed to enhance traditional bark corks in wine bottles. The stopper of the present invention reduces flavor scalping, water and ethanol permeation, and TCA permeation associated with traditional corks, and results in excellent Wine Protection Factor ratings.

Abstract: A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.

Abstract: A multi-layered, composite, inflatable and deflatable article of manufacture is provided. The article includes at least two layers of a flexible, waterproof, air impermeable, optionally water-vapor-permeable material, the two layers forming at least one inflatable compartment therebetween. The two layers have at least one additional layer of a porous insulating material, e.g., batting, disposed between them within the compartment. The layers are all adhesively bonded together about the periphery of the compartment and, optionally, at discrete locations within the periphery of the compartment. The porous insulating layer is otherwise unattached to either of the waterproof layers, and preferably is not otherwise attached to either. The compartment has at least one sealable opening therein through which air may be injected into or removed from the compartment, as desired, to thereby inflate or deflate the compartment to a desired volume and to thereby control its insulative value.

Abstract: A multi-layered, composite, inflatable and deflatable article of manufacture is provided. The article includes at least two layers of a flexible, waterproof, air impermeable, optionally water-vapor-permeable material, the two layers forming at least one inflatable compartment therebetween. The two layers have at least one additional layer of a porous insulating material, e.g., batting, disposed between them within the compartment. The layers are all adhesively bonded together about the periphery of the compartment and, optionally, at discrete locations within the periphery of the compartment. The porous insulating layer is otherwise unattached to either of the waterproof layers, and preferably is not otherwise attached to either. The compartment has at least one sealable opening therein through which air may be injected into or removed from the compartment, as desired, to thereby inflate or deflate the compartment to a desired volume and to thereby control its insulative value.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: An aqueous polishing composition having abrasive particles of a metal oxide has a pH that undergoes pH drift, because ions are provided by dissolution of the metal oxide, and the pH drift is minimized by providing the aqueous polishing composition with an equilibrium concentration of the ions at said pH.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising an organic polymer having a backbone comprised of at least 16 carbon atoms, the polymer having a plurality of moieties with affinity to surface groups on the semiconductor wafer surface. Another composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising a surfactant having a carbon chain backbone comprised of at least 16 carbon atoms.

Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Abstract: A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Abstract: This invention is directed to a polishing composition used for the chemical mechanical polishing of semiconductor wafers having a copper metal circuit. The composition has a pH of under 5.0 and comprises the following: (a) a water soluble carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers; (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of organic polymer particles, wherein the polymer of the organic polymer particles has a number average molecular weight of at least 500,000 determined by GPC (gel permeation chromatography) and a Tg (glass transition temperature) of at least 25° C.

Abstract: This invention is directed to a polishing composition used for the chemical mechanical polishing of semiconductor wafers having a copper metal circuit. The composition has a pH of under 5.

Abstract: An aqueous polishing composition for chemical mechanical polishing to remove copper from a buffer material, the composition comprising, an oxidizing agent, a complexing agent, an inhibitor, a dishing reducing agent, and abrasive particles comprising organic polymer particles for clearing relatively soft copper from the buffer material by chemical mechanical polishing while minimizing dishing and avoiding removal of the buffer material.

Abstract: A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been found to be particularly advantageous for metal polishing, particularly the polishing of metal layers during the manufacture of semiconductor devices.

Abstract: An aqueous polishing composition having abrasive particles of a metal oxide has a pH that undergoes pH drift, because ions are provided by dissolution of the metal oxide, and the pH drift is minimized by providing the aqueous polishing composition with an equilibrium concentration of the ions at said pH.

Abstract: A polishing composition for chemical mechanical polishing of semiconductor wafers having a copper metal circuit includes, an aqueous composition having a pH of under 5.0, and polyacrylic acid having a number average molecular weight of about 20,000-150,000, or blends of high and low number average molecular weight polyacrylic acids.

Abstract: A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Abstract: This invention provides a polishing composition with a stable pH for use in CMP of semiconductor substrates comprising: high-purity submicron particles of a metal oxide and a soluble metal salt of the metal oxide. The metal salt is present in a proportionate amount to adjust the aqueous concentration of metal ions to the equilibrium solubility of the metal oxide at the desired pH of the polishing composition.