Abstract: A touch panel includes a touch sensor having a dielectric core layer disposed between first and second piezoelectric layers. Each piezoelectric layer comprises a poled piezoelectric polymer. The touch sensor further includes at least a first set of individually addressable electrodes disposed over the first piezoelectric layer and at least one second electrode disposed over the second piezoelectric layer. Circuitry is coupled to the first set of electrodes and the second electrode. The circuitry is configured to detect a change in an electrical signal of at least one electrode of the first set of electrodes referenced to the second electrode in response to a touch applied to the touch surface of the touch sensor.

Abstract: The disclosure generally relates to optical devices, such as interactive displays, and in particular to interactive projection displays having passive input devices. The present disclosure also provides a passive interactive input device having the ability to overcome problematic ambient interference signals in an interactive display, such as an interactive projection display.

Abstract: Assemblies comprising multi-layer optical film comprising optical layers reflecting incident UV and blue light over specified wavelength ranges. Embodiments of the multi-layer optical films are useful, for example, as a UV protective covering. An exemplary UV stable assembly comprises a multi-layer optical film comprising at least a first plurality of first and second optical layers reflecting at least 50 percent of incident UV light over at least a 30 nanometer wavelength range in a wavelength range from at least 300 nanometers to 400 nanometers, and a second plurality of first and second optical layers reflecting at least 50 percent of incident light over at least 30 nanometer wavelength in a wavelength range from at least 430 nanometers to 500 nanometers.

Abstract: Devices that provide for interaction with an image are disclosed. More specifically, devices that provide for tool-free interaction with a projected image are disclosed.

Abstract: The present disclosure describes optical elements and optical devices that use the optical elements to allow the output of two imagers to be combined onto a single optical axis. Each of the two imagers can be based on alternate polarization directions, and the disclosed embodiments can enable high contrast 3D projectors without requiring either time or polarization sequencing. The present disclosure further describes projection systems that include the optical devices.

Abstract: The present disclosure describes optical elements and optical devices that use the optical elements to allow the output of two imagers to be combined onto a single optical axis. Each of the two imagers can be based on alternate polarization directions, and the disclosed embodiments can enable high contrast 3D projectors without requiring either time or polarization sequencing. The present disclosure further describes projection systems that include the optical devices.

Abstract: 3D stereoscopic viewing enabled by the use of a fast switching speed LCD panel, dynamic backlight, and low cost glasses. The system utilizes an LCD panel with an LED backlight and wavelength selective glasses to isolate each channel by color. The system is based on alternating left and right image frames on an LCD panel. The left and right frames are illuminated by two slightly different red-green-blue light sources that are synchronized sequentially. The light sources are designed to emit light of different spectral composition. The viewer wears glasses where the left lens or filter passes only the spectrum of light used for the left channel of data, and the right lens or filter passes only the spectrum of light used for the right channel of data.

Abstract: A backlight that includes a front reflector and a back reflector that form a hollow light recycling cavity including an output surface is disclosed. The backlight further includes one or more light sources disposed to emit light into the light recycling cavity. The front reflector includes an on-axis average reflectivity of at least 90% for visible light polarized in a first plane, and an on-axis average reflectivity of at least 25% but less than 90% for visible light polarized in a second plane perpendicular to the first plane.

Abstract: Electrically pixelated luminescent devices, methods for forming electrically pixelated luminescent devices, systems including electrically pixelated luminescent devices, and methods for using electrically pixelated luminescent devices are described. More specifically, electrically pixelated luminescent devices that have inner and outer semiconductor layers and a continuous light emitting region, as well as individually addressable electrodes are described.

Abstract: A backlight that includes a front reflector and a back reflector that form a hollow light recycling cavity including an output surface is disclosed. The backlight further includes one or more light sources disposed to emit light into the light recycling cavity. The front reflector includes an on-axis average reflectivity of at least 90% for visible light polarized in a first plane, and an on-axis average reflectivity of at least 25% but less than 90% for visible light polarized in a second plane perpendicular to the first plane.

Abstract: A wireless presentation system includes communication means for line-of-sight communication links such that an association between a content holder and a desired presentation device can be automatically established using line-of-sight communication links.

Abstract: Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or l

Abstract: The disclosure generally relates to optical devices, such as interactive displays, and in particular to interactive projection displays having passive input devices. The present disclosure also provides a passive interactive input device having the ability to overcome problematic ambient interference signals in an interactive display, such as an interactive projection display.

Abstract: Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements are described.

Abstract: A backlight that includes a front reflector and a back reflector that form a hollow light recycling cavity including an output surface is disclosed. The backlight further includes one or more light sources disposed to emit light into the light recycling cavity. The front reflector includes an on-axis average reflectivity of at least 90% for visible light polarized in a first plane, and an on-axis average reflectivity of at least 25% but less than 90% for visible light polarized in a second plane perpendicular to the first plane.

Abstract: A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

Abstract: A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.

Abstract: Projection subsystems are described. More, particularly, projection subsystems that include a light source and a polarizing beam splitter are described. The polarizing beam splitters of the presently described projection subsystems are capable of avoiding performance degradation even after exposure to large doses of incident light.

Abstract: Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or l

Abstract: A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.