Patents by Inventor Cristina TRINGALI

Cristina TRINGALI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140319655
    Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 30, 2014
    Applicant: STMicroelectronics S.r.l.
    Inventors: Noemi Graziana Sparta', Cristina Tringali, Stella Loverso, Sebastiano Ravesi, Corrado Accardi, Filippo Giannazzo
  • Publication number: 20140116501
    Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.
    Type: Application
    Filed: October 16, 2013
    Publication date: May 1, 2014
    Applicant: STMICROELECTRONICS S.r.I.
    Inventors: Cosimo GERARDI, Cristina TRINGALI, Sebastiano RAVESI, Marina FOTI, NoemiGraziana SPARTA', Corrado ACCARDI, Stella LOVERSO
  • Publication number: 20130048071
    Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.
    Type: Application
    Filed: August 29, 2012
    Publication date: February 28, 2013
    Applicant: STMicroelectronics S.r.I.
    Inventors: Salvatore LOMBARDO, Cosimo GERARDI, Sebastiano RAVESI, Marina FOTI, Cristina TRINGALI, Stella LOVERSO, Nicola COSTA