Abstract: The present disclosure relates to a novel Akkermansia strain and a use thereof. The novel Akkermansia HB03 strain (Akkermansia sp. HB03) provided in the present disclosure lacks toxic genes and thus does not cause side effects in vivo, and also exhibits excellent anti-cancer activity. Therefore, it can be widely used in the development of agents for preventing or treating cancer.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: Provided is a mask manufacturing method which includes preparing a mask sheet and a frame, stretching the mask sheet, and fixing the stretched mask sheet to the frame, and forming cell openings in the mask sheet fixed to the frame.

Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.

Abstract: Embodiments are directed to deploying a workload on the best/highest performance node. Nodes configured to accommodate a request for a workload are selected. Information is collected on each of the selected nodes and the workload. Predicted response times expected for the workload running on each of the selected nodes are determined. The workload is deployed on a node of the selected nodes, the node having a corresponding predicted response time for the workload, the workload being deployed on the node based at least in part on the corresponding predicted response time.

Abstract: User data security is provided. Encrypted user data are identified in a virtual machine. A private key of a public/private cryptographic key pair corresponding to a user is retrieved. The encrypted user data is decrypted within the virtual machine utilizing the private key corresponding to the user to form decrypted user data. The encrypted user data are replaced in the virtual machine with the decrypted user data. The decrypted user data is processed in the virtual machine to perform a service in a cloud environment.

Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Abstract: Disclosed are primers, kits and methods for the detection and quantitation of cable bacteria (Candidatus Electronema). Use of the primers by the methods enables the detection and quantitation of cable bacteria (Candidatus Electronema) in environmental samples, with a minimum detection limit of 10 copies/?L, resulting in the sensitivity 10,000 times higher than that of the currently used FISH method. The primers, the kit, and the methods have high sensitivity, high accuracy, good reproducibility, and high specificity, and allow detection with a linear range of 101-108 copies/?L.

Abstract: Disclosed herein is an anode for a secondary battery manufactured thereby. The anode for a secondary battery includes a first adhesive member and a second adhesive member to which a plurality of electrolytes are fused, a first case configured to be fused to the first adhesive member, and a second case configured to be fused to the second adhesive member and the first case and into which an anode active material and a liquid electrolyte are injected. The anode has an effect of maximizing a reaction area because an electrolyte is exposed at both surfaces of the anode for a secondary battery.

Abstract: A method for multi-dimensional identification of flexible load demand response effects, including: step 1. determining a target object, a target area and a demand response project that participate in the multi-dimensional identification of flexible load demand response effects; step 2. acquiring flexible load evaluation data of the target area and the target object; step 3. performing data cleaning; step 4. preprocessing the flexible load evaluation data; step 5. constructing four characteristic extraction indicators, a peak load reduction rate, a peak-to-valley difference ratio, a load factor ratio and a response status, inputting a predicted value and an actual collected value of maximum and minimum daily loads before and after the flexible load demand response that are obtained from the prepossessing, to generate a matrix for clustering; step 6. clustering the matrix for clustering generated in step 5; step 7. guiding a more targeted development of demand response projects.

Abstract: Disclosed herein are a manufacturing method of an anode for a secondary battery and an anode for a secondary battery manufactured thereby. The manufacturing method of an anode for a secondary battery includes firstly fusing a plurality of electrolytes to a first adhesive member and a second adhesive member, secondly fusing the first adhesive member and the second adhesive member to a first case and a second case, respectively, injecting an anode active material and a liquid electrolyte into the second case to which the second adhesive member is fused, and thirdly fusing the first case and the second case to each other. The anode for a secondary battery has an effect of maximizing a reaction area because an electrolyte is exposed at both surfaces of the anode for a secondary battery.

Abstract: Disclosed herein is an anode for a secondary battery manufactured thereby. The anode for a secondary battery includes a first adhesive member and a second adhesive member to which a plurality of electrolytes are fused, a first case configured to be fused to the first adhesive member, and a second case configured to be fused to the second adhesive member and the first case and into which an anode active material and a liquid electrolyte are injected. The anode has an effect of maximizing a reaction area because an electrolyte is exposed at both surfaces of the anode for a secondary battery.

Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Abstract: Disclosed herein are a manufacturing method of an anode for a secondary battery and an anode for a secondary battery manufactured thereby. The manufacturing method of an anode for a secondary battery includes firstly fusing a plurality of electrolytes to a first adhesive member and a second adhesive member, secondly fusing the first adhesive member and the second adhesive member to a first case and a second case, respectively, injecting an anode active material and a liquid electrolyte into the second case to which the second adhesive member is fused, and thirdly fusing the first case and the second case to each other. The anode for a secondary battery has an effect of maximizing a reaction area because an electrolyte is exposed at both surfaces of the anode for a secondary battery.

Abstract: A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×1019 atoms/cm3; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.

Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Abstract: A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×1019 atoms/cm3; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.

Abstract: An embodiment of the invention relates to a power converter formed with an error amplifier and a related method. In an embodiment, a first switch is coupled in series with an error amplifier compensation capacitor. Upon detection of a current level greater than a threshold level, the compensation capacitor is decoupled from the error amplifier by opening the first switch. In an embodiment, a second switch is coupled in parallel with the compensation capacitor, and the current-sensing circuit enables conductivity of the second switch to discharge the compensation capacitor upon detection of the current level greater than the threshold level. The second switch is opened upon detection of the current level less than the threshold level. In an embodiment, the current-sensing circuit controls an output current of the power converter at a current-limit level upon detection of the internal current level greater than the threshold level.

Abstract: Embodiments related to an undervoltage detector are described and depicted. An undervoltage detector is formed to detect a low input bias voltage with a voltage divider network including first and second series circuits of semiconductor devices coupled to terminals of the input bias voltage source, and a resistor voltage divider including first and second voltage divider resistors coupled in series with the first and second series circuits. A ratio representing the numbers of semiconductor devices in the series circuits is substantially equal to a ratio of resistances in the resistor voltage divider. The equality of the ratios may be corrected by the presence of other resistances in the undervoltage detector. The semiconductor devices are each coupled in a diode configuration. The first series circuit is coupled to a current mirror to provide a bias current for a comparator that produces an output signal for the undervoltage detector.