Abstract: In some examples, a peripheral circuit is configured to: when performing a first read operation on memory cells coupled to a selected word line, apply a first pass voltage to a first word line, apply a second pass voltage to a second word line, and apply a third pass voltage to a third word line, wherein the first word line comprises at least one word line physically located above and below the selected word line respectively, both the second word line and the third word line comprise word lines physically located on a side of the first word line away from the selected word line, memory cells coupled to the second word line comprise programmed memory cells, memory cells coupled to the third word line comprise unprogrammed memory cells, and the first pass voltage, the second pass voltage and the third pass voltage are all different.

Abstract: A front cover structure of a vehicle includes a front cover outer and a front cover plastic inner plate. The front cover outer plate includes a transparent plastic layer and a colored plastic layer. Along a thickness direction of the front cover outer plate, the transparent plastic layer is provided on an upper surface of the colored plastic layer. Along the thickness direction, the front cover outer plate and the front cover plastic inner plate are stacked, and the front cover plastic inner plate is connected to the colored plastic layer.

Abstract: This application relates to a vehicle control method and system, a vehicle, and a storage medium. The vehicle control method includes: when a braking system fails, activating a backup braking system, the backup braking system decelerating a vehicle by controlling a regenerative motor; when a steering system fails, implementing transverse control over the vehicle by controlling the braking system; and when a parking system fails, implementing parking by controlling a motor and the braking system to work alternately. According to this method, safety control over the vehicle can be implemented when the original braking system, steering system, or parking system fails.

Abstract: Examples of present disclosure disclose a memory device and an operation method thereof, and a readable storage medium. The memory device includes: a first memory region and a second memory region, each including a plurality of memory cells; and a peripheral circuit coupled with the first memory region and the second memory region and configured to: when writing data to the first memory region, perform a first program operation on memory cells to be programmed in the first memory region by using first program voltages that increase gradually; and when writing data in the first memory region to the second memory region, perform a second program operation on memory cells to be programmed in the second memory region by using second program voltages that increase gradually.

Abstract: A high-concentration high-entropy electrolyte and its preparation method and battery were disclosing in the present disclosure. A high-concentration high-entropy electrolyte, including a solvent, a first solute salt and added salts, the first solute salt is a solute salt with high solubility in the solvent, while the added salts are composed of at least three solute salts, the molar concentration range of the solute salts in the high-concentration high-entropy electrolyte is between 20 M-60 M, the molar concentration of the first solute salt is greater than 20 M, and the molar concentration of the first solute salt is greater than 50% of the molar concentration of the high-concentration high-entropy electrolyte. The sodium-carbon dioxide batteries assembled with high-concentration high-entropy electrolytes not only have higher power density, but also have excellent discharge specific capacity and rate performance.

Abstract: This specification relates to storage methods, systems, and apparatuses for graph data. The graph data includes a node and an edge. The storage method includes: storing, in a point table of a data block, node information of several nodes in the graph data, where the node information includes a node identifier; storing edge information of edges of the several nodes in an edge table of the data block, where the edge information includes node identifiers of target nodes connected to the edges; storing attribute information of the several nodes in a point attribute table of the data block; and storing attribute information of the edges of the several nodes in an edge attribute table of the data block.

Abstract: The vibration damping device comprises a first vibration damping unit. The first vibration damping unit comprises protective nets, a fixing plate, a base, a guide element, a first elastic element and a limiting element. The fixing plate is arranged opposite to the base and connected to the protective nets. The guide element is located between the fixing plate and the base and opposite to the base. A movement space is formed between the guide element and the base. The base is also configured to be connected to a cab body. The first elastic element is arranged in the movement space. The limiting element has one end connected to the base and the other end working together with the fixing plate to limit the stroke of the first elastic element.

Abstract: Methods for processing deposited metal nanowire inks with metal ions are used to form fused metal nanostructured networks. The metal nanowire inks include a hydrophilic polymer binder, such as a cellulose based binder. The metal nanowire inks can be deposited onto a substrate surface and dried to drive the fusing process. Transparent conductive films can be formed with desirable properties.

Abstract: A display substrate, including: a display region, a pad bending region, and a first transition region located between the display region and the pad bending region, wherein the display region is provided with a signal line layer; the pad bending region is provided with a first wire layer; the first transition region is provided with a first connecting layer; the first connecting layer is provided with a first step formed by at least one inorganic insulation layer; the signal line layer is electrically connected to the first connecting layer by means of a first through hole provided in the first step; and the first wire layer is electrically connected to the first connecting layer.

Abstract: A method for preparing a carbon nanotube sodiophilic metal anode-free sodium metal battery electrode material is provided, and the method includes the following steps: the carbon nanotubes are modified by a dielectric barrier plasma device; the modified carbon nanotubes are mixed and stirred with a sodiophilic metal salt to obtain a precursor slurry; the precursor slurry is dried, placed in a tube furnace after drying, and heated by introducing a reducing gas to react, thereby obtaining a carbon nanotube sodiophilic metal anode-free sodium metal battery electrode material. The electrode material prepared by the method has a stable structure, excellent electrical conductivity, and excellent sodium affinity, and can be applied to anode-free sodium metal battery electrode materials. The entire preparation process is controllable, the synthesis cycle is short, and the operation is simple.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: A battery cell, a battery pack and a vehicle. The battery cell comprises: a housing, which is provided with an inner cavity, and a first side wall and a second side wall, which are opposite each other, wherein an inner wall surface of the second side wall is configured to have a recess, which is recessed in a direction facing away from the inner cavity, the recess forms an air exhaust passage in the inner cavity, and the second side wall is provided with an explosion-proof hole, which corresponds to the air exhaust passage in terms of position; a terminal, which is arranged on a side wall of the housing other than the second side wall; an explosion-proof valve, which is mounted on the second side wall and is used for covering the explosion-proof hole; and an electrode core, which is arranged inside the housing and is spaced apart from the explosion-proof hole.

Abstract: A battery includes a battery shell, an electrode core, and a conductive column. The electrode core is disposed within the battery shell, and the conductive column extends through the battery shell and is connected to the electrode core, where a cross-sectional area s in mm2 of the conductive column and a battery capacity C in Ah of the battery meet: C/s?8.

Abstract: An intelligent vehicle capturing apparatus for a high-pier bridge includes: a double-layer metal protective net; and a support unit and an actuation unit connected to the double-layer metal protective net. The double-layer metal protective net is mounted to a backside of the high-pier bridge through the support unit. The actuation unit includes a hydraulic link mechanism. The hydraulic link mechanism is connected to one end of the double-layer metal protective net. The hydraulic link mechanism is moved to unwind the double-layer metal protective net on the backside of the high-pier bridge to capture a vehicle. In this way, the apparatus stops and buffers a vehicle that is about to rush out of a high-pier bridge.

Abstract: Systems and methods for cache management of a storage device are disclosed. The storage device is configured to receive a first code provided by a computing device; execute the first code; perform a first update of the first storage medium based on the first code; receive a second code provided by the computing device; execute the second code; and perform a second update of the first storage medium based on the second code.

Abstract: An asymmetric sodium-based solid-state composite electrolyte includes a first solid-state composite electrolyte layer and a second composite electrolyte layer obtained by laminated coating method. Both the two solid-state composite electrolyte layers include a polymer matrix, an inorganic filler, a sodium salt and a plasticizer, the difference is the electron conductive agent added with the mass ratio ranges from 1 wt. %˜10 wt. % into the second solid-state composite electrolyte layer. In a battery assembled with the asymmetric sodium-based solid-state composite electrolyte, the first solid-state composite electrolyte layer is contiguous with a positive electrode, and the second solid-state composite electrolyte layer is disposed between the first solid-state composite electrolyte layer and a negative electrode.

Abstract: Systems and methods for prefetching data are disclosed. A processor executes a first command for moving first data stored in a storage device. Based on the first command, the processor stores, into a first queue of the storage device, a first address associated with the first data. The storage device further retrieves the first address from the first queue, retrieves the first data from the first storage medium based on the first address, and stores the first data to the second storage medium. In some embodiments, a process for prefetch optimization is also disclosed. A processor identifies a value for prefetching data. The processor runs an application, measures performance of the application, modifies the value based on the performance, and determines that the performance satisfies a criterion.

Abstract: Systems and methods for prefetching data are disclosed. A processor in communication with a storage device identifies a first address. The processor identifies a first setting associated with the first address. The processor issues a first command to a first storage medium of the storage device based on the first setting. The first command is for performing a first type of memory read. The storage device is configured to retrieve first data associated with the first address in the first storage medium, to a second storage medium of the storage device, based on the first command.

Abstract: A method for treating battery positive electrode material includes: cold plasma treatment of at least part of the battery positive electrode material with carbon layer on the surface to be treated to have active particles doped in the carbon layer, where the doping amount is not less than 50 ppm (Part per million). At least part of the surface of the positive electrode material of the battery contains a carbon layer and at least part of the surface has a rod-like shape. The carbon layer is a carbon layer doped with active particles after cold plasma treatment, and a high-sodium ion conductance NaF layer is formed on the surface of the positive electrode material.

Abstract: A rapid preparation method of transition metal borides includes steps of: using a tungsten rod as the cathode, and a block mixture of boron powder and metal oxide as the anode, the block mixture and the tungsten rod are placed in an plasma device; the plasma device is evacuated, and then filled with a buffer gas and an electric arc is started to obtain a transition metal boride. The present disclosure adopts the direct current arc plasma method with the advantages of simple operation, low cost, environmental friendliness and controllable reaction atmosphere to prepare the transition metal boride, the preparation process is simple, the preparation process is fast, and the environment will not be affected.