Patents by Inventor Dae Gyu AN

Dae Gyu AN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integration of Ge-containing fins and compound semiconductor fins
    Patent number: 9054192
    Abstract: A stack of a germanium-containing layer and a dielectric cap layer is formed on an insulator layer. The stack is patterned to form germanium-containing semiconductor fins and germanium-containing mandrel structures with dielectric cap structures thereupon. A dielectric masking layer is deposited and patterned to mask the germanium-containing semiconductor fins, while physically exposing sidewalls of the germanium-containing mandrel structures. A ring-shaped compound semiconductor fin is formed around each germanium-containing mandrel structure by selective epitaxy of a compound semiconductor material. A center portion of each germanium-containing mandrel can be removed to physically expose inner sidewalls of the ring-shaped compound semiconductor fin. A high-mobility compound semiconductor layer can be formed on physically exposed surfaces of the ring-shaped compound semiconductor fin.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: June 9, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kevin K. Chan, Cheng-Wei Cheng, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Dae-Gyu Park, Devendra K. Sadana
  • Fabrication of field-effect transistors with atomic layer doping
    Patent number: 9048261
    Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: June 2, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Young-Hee Kim, Isaac Lauer, Ramachandran Muralidhar, Dae-Gyu Park, Xinhui Wang, Min Yang
  • Process variability tolerant hard mask for replacement metal gate finFET devices
    Patent number: 9034748
    Abstract: Embodiments include a method comprising depositing a hard mask layer over a first layer, the hard mask layer including; lower hard mask layer, hard mask stop layer, and upper hard mask. The hard mask layer and the first layer are patterned and a spacer deposited on the patterned sidewall. The upper hard mask layer and top portion of the spacer are removed by selective etching with respect to the hard mask stop layer, the remaining spacer material extending to a first predetermined position on the sidewall. The hard mask stop layer is removed by selective etching with respect to the lower hard mask layer and spacer. The first hard mask layer and top portion of the spacer are removed by selectively etching the lower hard mask layer and the spacer with respect to the first layer, the remaining spacer material extending to a second predetermined position on the sidewall.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: May 19, 2015
    Assignee: International Business Machines Corporation
    Inventors: Christopher V. Baiocco, Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Fei Liu, Dae-Gyu Park, Helen Wang, Xinhui Wang, Min Yang
  • METHOD FOR REALIZING USER INTERFACE USING CAMERA AND MOBILE COMMUNICATION TERMINAL FOR THE SAME
    Publication number: 20150135139
    Abstract: A method for realizing a user interface using a camera module and a mobile communication terminal for the same. If a user makes a predetermined motion in a state in which the camera module of the mobile communication terminal is activated, the mobile communication terminal performs a predetermined action according to the motion pattern by recognizing the user motion and patterning the motion. In this case, the action performed according to the motion pattern corresponds to mouse control in a mouse mode, game control in a game mode, and character input in a character input mode.
    Type: Application
    Filed: January 23, 2015
    Publication date: May 14, 2015
    Inventors: Soon-Ok KIM, Dae-Gyu KIM, Yong-Soo PARK
  • BALANCER AND WASHING MACHINE HAVING THE SAME
    Publication number: 20150121968
    Abstract: A washing machine includes a cabinet, a tub provided inside the cabinet to store wash water therein, a drum rotatably provided inside the tub, and a balancer comprising an upper side surface covering an outer surface of a bottom of the drum and a lower side surface formed at one side of the upper side surface in a planar shape while facing an inner surface of a bottom of the tub. The balancer is configured to counterbalance an unbalanced load of the drum, thereby saving energy and enhancing balancing efficiency.
    Type: Application
    Filed: October 20, 2014
    Publication date: May 7, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Hyun KIM, Sang Up LEE, Dae Gyu KANG, Seung Youp LEE
  • 3D transistor channel mobility enhancement
    Patent number: 9023697
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: May 5, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Min Yang, Qi Zhang
  • Three dimensional pipe gate nonvolatile memory device
    Patent number: 9000509
    Abstract: A nonvolatile memory device includes a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate; a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole; a first blocking layer and a charge trapping and charge storage layer formed on sidewalls of the columnar cell channels; and a second blocking layer formed between the first blocking layer and the plurality of gate electrodes.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: April 7, 2015
    Assignee: Hynix Semiconductor Inc.
    Inventors: Ki-Hong Lee, Kwon Hong, Dae-Gyu Shin
  • NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20150093866
    Abstract: A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.
    Type: Application
    Filed: December 8, 2014
    Publication date: April 2, 2015
    Inventors: Ki-Hong LEE, Kwon HONG, Dae-Gyu SHIN
  • Semiconductor device and method of manufacturing the same
    Patent number: 8981450
    Abstract: A semiconductor device includes conductive layers and interlayer insulating layers stacked alternately with each other, at least one first channel layer passing through the conductive layers and the interlayer insulating layers, at least one second channel layer coupled to the first channel layers and passing through the conductive layers and the interlayer insulating layers, a first insulating layer interposed between the at least one first channel layer and the conductive layers, and a second insulating layer interposed between the at least one second channel layer and the conductive layers and having a higher nitrogen concentration than the first insulating layer.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: March 17, 2015
    Assignee: SK Hynix Inc.
    Inventor: Dae Gyu Shin
  • Nonvolatile pipe gate memory device
    Patent number: 8975683
    Abstract: A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: March 10, 2015
    Assignee: SK Hynix Inc.
    Inventors: Ki-Hong Lee, Kwon Hong, Dae-Gyu Shin
  • PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE FINFET DEVICES
    Publication number: 20150064897
    Abstract: Embodiments include a method comprising depositing a hard mask layer over a first layer, the hard mask layer including; lower hard mask layer, hard mask stop layer, and upper hard mask. The hard mask layer and the first layer are patterned and a spacer deposited on the patterned sidewall. The upper hard mask layer and top portion of the spacer are removed by selective etching with respect to the hard mask stop layer, the remaining spacer material extending to a first predetermined position on the sidewall. The hard mask stop layer is removed by selective etching with respect to the lower hard mask layer and spacer. The first hard mask layer and top portion of the spacer are removed by selectively etching the lower hard mask layer and the spacer with respect to the first layer, the remaining spacer material extending to a second predetermined position on the sidewall.
    Type: Application
    Filed: September 4, 2013
    Publication date: March 5, 2015
    Applicant: International Business Machines Corporation
    Inventors: Christopher V. Baiocco, Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Fei Liu, Dae-Gyu Park, Helen Wang, Xinhui Wang, Min Yang
  • Method for realizing user interface using camera and mobile communication terminal for the same
    Patent number: 8965452
    Abstract: A method for realizing a user interface using a camera module and a mobile communication terminal for the same. If a user makes a predetermined motion in a state in which the camera module of the mobile communication terminal is activated, the mobile communication terminal performs a predetermined action according to the motion pattern by recognizing the user motion and patterning the motion. In this case, the action performed according to the motion pattern corresponds to mouse control in a mouse mode, game control in a game mode, and character input in a character input mode.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: February 24, 2015
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Soon-Ok Kim, Dae-Gyu Kim, Yong-Soo Park
  • 3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
    Publication number: 20150041858
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Application
    Filed: October 24, 2014
    Publication date: February 12, 2015
    Inventors: KEVIN K. CHAN, DAE-GYU PARK, XINHUI WANG, YUN-YU WANG, MIN YANG, QI ZHANG
  • 3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
    Publication number: 20150041911
    Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
    Type: Application
    Filed: August 8, 2013
    Publication date: February 12, 2015
    Applicants: GLOBALFOUNDRIES, INC., International Business Machines Corporation
    Inventors: KEVIN K. CHAN, DAE-GYU PARK, XINHUI WANG, YUN-YU WANG, MIN YANG, QI ZHANG
  • WASHING MACHINE
    Publication number: 20150040619
    Abstract: A washing machine includes a cabinet; a tub which is disposed in the cabinet and in which washing water is stored; a drain hose that guides the washing water in the tub toward an outer side of the cabinet; and a siphonage prevention unit disposed on the drain hose, wherein the siphonage prevention unit includes: a connection pipe having a connection flow path that communicates with the drain hose; an air pipe having an air flow path that communicates with the connection flow path; and a protrusion that is disposed adjacent to a communication portion in which the connection flow path and the air flow path communicate with each other and that protrudes from an inner side surface of the connection pipe. Through this configuration, a siphonage phenomenon in the drain hose can be prevented.
    Type: Application
    Filed: August 4, 2014
    Publication date: February 12, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Gyu KANG, Young Hyun KIM
  • USE OF A NOVEL AMINOPYRIDINE DERIVATIVE TO PREVENT OR TREAT CANCER
    Publication number: 20150038531
    Abstract: An aminopyridine derivative of Formula 1 and a method of preventing or treating cancer using the same. Formula 1: In Formula 1: X1 and X2 are each independently selected from the group consisting of carbon and nitrogen; R1 to R5 are each independently selected from the group consisting of a hydrogen, a straight, a branched, or cyclo alkyl of C1-C4, a halogen, and a hydroxyl; and R6 is a hydrogen or an alkyl of C1-C6.
    Type: Application
    Filed: October 20, 2014
    Publication date: February 5, 2015
    Inventors: Sunghoon Kim, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim
  • WASHING MACHINE
    Publication number: 20150013397
    Abstract: A washing machine including a filter device, a support, or an auxiliary damper, using pressure of water supplied thereto. The washing machine includes a casing, a reservoir installed inside the casing, a water supply tube connected to an upper portion of the reservoir such that wash water is supplied through the water supply tube, a drainage tube connected to a lower portion of the reservoir such that wash water is discharged through the drainage tube, and a filter device which allows wash water to be moved and eliminates foreign substances from the wash water at one side of the reservoir using pressure of the wash water supplied through the water supply tube. It may be possible to eliminate foreign substances from laundry using pressure of water supplied according to progress of operation of the washing machine without provision of additional power.
    Type: Application
    Filed: July 8, 2014
    Publication date: January 15, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young Hyun KIM, Dae Gyu Kang
  • Packet generating method in wireless HDMI CEC
    Patent number: 8897304
    Abstract: A packet generating method in a wireless High Definition Multimedia Interface (HDMI) environment includes generating a packet which includes either AV data or control data in a payload and a field indicative of a packet type in a header according to a HDMI environment; and transmitting the generated packet. Accordingly, the AV data and the control data can be transceived over the single channel in the HDMI.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: November 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-woo Hong, Dae-gyu Bae, Dong-young Kim, Ho-jeong You, Si-hong Park
  • LOCATION-BASED INFORMATION SERVICE METHOD AND MOBILE TERMINAL THEREFOR
    Publication number: 20140329547
    Abstract: A location-based information service method for improving utilization of location-based information services and a mobile terminal for implementing the location-based information service method are provided. A method for providing an information service using a mobile terminal includes acquiring, at a mobile terminal, location information, determining an Internet Protocol (IP) address based on the location information, and receiving service information from a cyber space associated with a service provider that corresponds to the IP address.
    Type: Application
    Filed: July 21, 2014
    Publication date: November 6, 2014
    Inventors: Seung Min CHOI, Sang Yoon LEE, Dae Gyu KIM, Jin Il KIM, Min Sook PARK
  • INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TRENCH CAPACITOR
    Publication number: 20140299882
    Abstract: At least one dielectric pad layer is formed on a semiconductor-on-insulator (SOI) substrate. A deep trench is formed in the SOI substrate, and a combination of an outer electrode, a node dielectric, and an inner electrode are formed such that the top surface of the inner electrode is recessed below the top surface of a buried insulator layer of the SOI substrate. Selective epitaxy is performed to fill a cavity overlying the inner electrode with an epitaxial semiconductor material portion. A top semiconductor material layer and the epitaxial semiconductor material portion are patterned to form a fin structure including a portion of the top semiconductor material layer and a portion of the epitaxial semiconductor material portion. The epitaxial semiconductor material portion functions as a conductive strap structure between the inner electrode and a semiconductor device to be formed on the fin structure.
    Type: Application
    Filed: April 5, 2013
    Publication date: October 9, 2014
    Applicant: International Business Machines Corporation
    Inventors: Kevin K. Chan, Babar A. Khan, Dae-Gyu Park, Xinhui Wang