Patents by Inventor Dae Hong Min

Dae Hong Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250255040
    Abstract: A light emitting element includes a first semiconductor layer doped with a first conductivity type, a stress relief layer disposed on the first semiconductor layer, the stress relief layer including an indium-containing layer containing a nitride-based semiconductor material containing indium, and doped with the first conductivity type, a light emitting layer disposed on the stress relief layer, the light emitting layer including a quantum well layer containing a nitride-based semiconductor material containing indium in a composition greater than or equal to an indium composition of the indium-containing layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type, the indium composition of the indium-containing layer is in a range of about 30% to about 100% of an indium composition of the quantum well layer.
    Type: Application
    Filed: October 7, 2024
    Publication date: August 7, 2025
    Applicant: Samsung Display Co., LTD.
    Inventors: Dae Hong MIN, Jin Wan KIM, Su Jeong KIM
  • Publication number: 20250176344
    Abstract: A display panel, including an a-th first electrode connected to a pixel circuit of a first pixel, and electrically connected to a first emission layer in a first contact hole, a b-th first electrode connected to a pixel circuit of a second pixel, and electrically connected to a second emission layer in a second contact hole formed by removing at least a portion of the first emission layer, a c-th first electrode connected to a pixel circuit of a third pixel, and electrically connected to a third emission layer in a third contact hole formed by removing at least portions of the first and second emission layers, and a second electrode connected to the pixel circuits of the first to third pixels, and connected to the first to third emission layers in a fourth contact hole formed by removing at least portions of the first to third emission layers.
    Type: Application
    Filed: August 7, 2024
    Publication date: May 29, 2025
    Applicant: Samsung Display Co., LTD.
    Inventors: Dae Hong MIN, Seok Jin KANG, Su Jeong KIM
  • Publication number: 20250107280
    Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
    Type: Application
    Filed: December 5, 2024
    Publication date: March 27, 2025
    Inventors: Dae Hong MIN, Jun Ho YOON, Woo Cheol GWAK, Jin Woo HUH, Yong Hyun BAEK
  • Patent number: 12176458
    Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
    Type: Grant
    Filed: May 22, 2023
    Date of Patent: December 24, 2024
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Dae Hong Min, Jun Ho Yoon, Woo Cheol Gwak, Jin Woo Huh, Yong Hyun Baek
  • Publication number: 20240363674
    Abstract: The present disclosure relates to a light-emitting element structure and a display device. According to one or more embodiments, the display device includes a growth substrate, light-emitting elements including a first light-emitting element for emitting light of a first wavelength and a second light-emitting element for emitting light of a second wavelength on the growth substrate, and including current-spreading layers including a first current-spreading layer having a first width on the first light-emitting element and a second current-spreading layer having a second width that is less than the first width on the second light-emitting element, and an insulating layer between the light-emitting elements.
    Type: Application
    Filed: January 11, 2024
    Publication date: October 31, 2024
    Inventors: Su Jeong KIM, Dae Hong MIN
  • Publication number: 20240154064
    Abstract: A display device includes: a base layer; and light emitting elements disposed on the base layer, the light emitting elements including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type and P-type semiconductor layers. The light emitting elements include a first light emitting element emitting light of a first color and a second light emitting element emitting light of a second color. The N-type semiconductor layer includes a first N-type semiconductor layer of the first light emitting element and a second N-type semiconductor layer of the second light emitting element. The active layer includes a first active layer of the first light emitting element and a second active layer of the second light emitting element. The first and second N-type semiconductor layers are integral with each other, and form a plane surface in an area where the active layer is disposed.
    Type: Application
    Filed: May 1, 2023
    Publication date: May 9, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Su Jeong KIM, Dae Hong MIN
  • Publication number: 20230378394
    Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
    Type: Application
    Filed: May 22, 2023
    Publication date: November 23, 2023
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Dae Hong MIN, Jun Ho YOON, Woo Cheol GWAK, Jin Woo HUH, Yong Hyun BAEK
  • Publication number: 20230335673
    Abstract: A light emitting diode and a light emitting device having the same, in which the light emitting diode can include a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; a lower active layer disposed there between; and an upper active layer disposed between the lower active layer and the second conductivity type semiconductor layer. The lower active layer can emit light having a wavelength shorter than that of the upper active layer, the upper active layer can include a plurality of well layers and a plurality of barrier layers, at least one of the plurality of barrier layers can include a first barrier layer and a second barrier layer having an n-type impurity doping concentration lower than that of the first barrier layer, and the first barrier layer can be closer to the first conductivity type semiconductor layer than the second barrier layer.
    Type: Application
    Filed: March 10, 2023
    Publication date: October 19, 2023
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Dae Hong MIN, Yong Hyun BAEK, Ji Hun KANG
  • Publication number: 20230215846
    Abstract: A light emitting device according to an exemplary embodiment includes a first light emission region and a second light emission region. The first and second light emission regions include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active region formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, an area of the first light emission region is larger than an area of the second emission region, and at least one of the first emission region or the second emission region emits light of a plurality of peak wavelengths.
    Type: Application
    Filed: December 26, 2022
    Publication date: July 6, 2023
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Dae Hong MIN, Yong Hyun BAEK, Ji Hun KANG, Chung Hoon LEE
  • Patent number: 11658264
    Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: May 23, 2023
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Dae Hong Min, Jun Ho Yoon, Woo Cheol Gwak, Jin Woo Huh, Yong Hyun Baek
  • Publication number: 20230098895
    Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; a second conductivity type nitride semiconductor layer disposed on the upper active layer, an upper step coverage layer disposed between the second conductivity type semiconductor layer and the upper active layer; and a lower step coverage layer disposed between the intermediate layer and the lower active layer, in which in an electroluminescence spectrum, the light emitting diode emits light having a highest peak intensity in a wavelength range of 500 nm or more in a visible light region.
    Type: Application
    Filed: December 8, 2022
    Publication date: March 30, 2023
    Inventors: Dae Hong MIN, Yong Hyun BAEK, Ji Hun KANG
  • Publication number: 20230093367
    Abstract: A light emitting device and a light emitting module having the same are provided. A light emitting device includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which, upon operation, the active layer emits light of a first peak wavelength and light of a second peak wavelength in which the first peak wavelength may be within a range of about 400 nm to about 415 nm, and the second peak wavelength may be greater than or equal to about 440 nm.
    Type: Application
    Filed: November 29, 2022
    Publication date: March 23, 2023
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Yong Hyun BAEK, Dae Hong MIN, Ji Hun KANG, Chung Hoon LEE
  • Publication number: 20230076963
    Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; and a second conductivity type nitride semiconductor layer disposed on the upper active layer, in which the lower active layer and the upper active layer emit light having different peak wavelengths from each other.
    Type: Application
    Filed: August 22, 2022
    Publication date: March 9, 2023
    Inventors: Dae Hong MIN, Yong Hyun BAEK, Ji Hun KANG
  • Publication number: 20230011795
    Abstract: A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 12, 2023
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Dae Hong MIN, Yong Hyun BAEK, Ji Hun KANG
  • Publication number: 20220367752
    Abstract: A light emitting diode includes a first conductivity type nitride semiconductor layer, a V-pit generation layer disposed on the first conductivity type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer, a stress relief layer disposed between the V-pit generation layer and the active layer, and a second conductivity type nitride semiconductor layer disposed on the active layer. The stress relief layer and the active layer may be formed in the V-pits, as well as on a flat surface of the V-pit generation layer, and the active layer may emit light of a multi-band spectrum.
    Type: Application
    Filed: May 10, 2022
    Publication date: November 17, 2022
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Dae Hong MIN, Yong Hyun BAEK, Ji Hun KANG
  • Publication number: 20220285579
    Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes an n-type nitride semiconductor layer, a V-pit generation layer, a sub-emission layer, an active layer, and a p-type nitride semiconductor layer. The sub-emission layer is disposed on the n-type nitride semiconductor layer and having V-pits. The active layer is disposed on the sub-emission layer and having a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer. The p-type nitride semiconductor layer is disposed on the active layer. An energy band gap of the sub-emission layer is wider than that of the first well region of the active layer. The light emitting diode emits light having at least three different peak wavelengths at a single chip level.
    Type: Application
    Filed: February 28, 2022
    Publication date: September 8, 2022
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Yong Hyun BAEK, Dae Hong MIN, Ji Hun KANG
  • Publication number: 20220262983
    Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205?X?0.495 and 0.265?Y?0.450 in CIE color coordinates (X, Y).
    Type: Application
    Filed: February 16, 2022
    Publication date: August 18, 2022
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Chung Hoon LEE, Yong Hyun BAEK, Ji Hun KANG, Dae Hong MIN, Dae Sung CHO, So Ra LEE
  • Publication number: 20220216188
    Abstract: A light emitting device and a light emitting module having the same are provided. The light emitting module includes a circuit board and a plurality of light emitting units arranged on the circuit board. Each of the plurality of light emitting units includes a light emitting device. The plurality of light emitting units emits light of different colors from one another.
    Type: Application
    Filed: January 5, 2022
    Publication date: July 7, 2022
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Yong Hyun BAEK, Dae Hong MIN, Ji Hun KANG, Chung Hoon LEE
  • Publication number: 20210074883
    Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
    Type: Application
    Filed: September 18, 2020
    Publication date: March 11, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Dae Hong MIN, Jun Ho YOON, Woo Cheol GWAK, Jin Woo HUH, Yong Hyun BAEK
  • Patent number: 8048800
    Abstract: A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: November 1, 2011
    Assignee: Dongguk University Industry—Academic Corporation Foundation
    Inventors: Jin-Koo Rhee, Seong-Dae Lee, Mi-Ra Kim, Dae-Hong Min, Wan-Joo Kim