Patents by Inventor Dae Hong Min

Dae Hong Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device having a cell area with a high device element density
    Patent number: 7550378
    Abstract: A method for manufacturing a semiconductor device including providing a semiconductor substrate including a cell area formed with relatively high device element density and a scribe line area formed with a device element density lower than the device element density of the cell area. An insulating layer is deposited over the semiconductor substrate. The insulating layer is planarized through a chemical mechanical polishing (CMP) process including a first polishing step and a second polishing step having different removal rates with respect to the insulating layer formed over the cell area and the scribe area.
    Type: Grant
    Filed: December 26, 2006
    Date of Patent: June 23, 2009
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Dae Hong Min
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20070148969
    Abstract: A method for manufacturing a semiconductor device including providing a semiconductor substrate including a cell area formed with relatively high device element density and a scribe line area formed with a device element density lower than the device element density of the cell area. An insulating layer is deposited over the semiconductor substrate. The insulating layer is planarized through a chemical mechanical polishing (CMP) process including a first polishing step and a second polishing step having different removal rates with respect to the insulating layer formed over the cell area and the scribe area.
    Type: Application
    Filed: December 26, 2006
    Publication date: June 28, 2007
    Inventor: Dae Hong Min