Abstract: A method of forming a pattern may include: disposing a first material layer; disposing a first photoresist film including first shot regions; exposing the first shot regions to light, wherein an overlapping region between first shot regions may be overlappingly exposed to light exposures onto the first shot regions; forming a first photoresist pattern by developing the first photoresist film; forming a first pattern by etching the first material layer using the first photoresist pattern as an etching mask; disposing a second material layer on the first pattern; disposing a second photoresist film including second shot regions; exposing the second shot regions, wherein a boundary region between second shot regions may be disposed spaced apart from the overlapping region; forming a second photoresist pattern by developing the second photoresist film; and forming a second pattern by etching the second material layer using the second photoresist pattern as an etching mask.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes a panel including pixels which are configured to control an amount of current that flows from a first power source to a second power source to generate an image of predetermined brightness. The display may also include at least one first power source line formed on a top of the panel and at least one second power source line positioned on a bottom of the panel to face the first power source line. The display may further include a first switch configured to alternately supply the first power source to the first power source line and the second power source line.

Abstract: An OLED display includes: a substrate; a first signal line provided on the substrate; a second signal line crossing the first signal line; a thin film transistor connected to the first signal line and the second signal line; a pixel electrode connected to a drain electrode of the thin film transistor; an emission layer formed on the pixel electrode; a common electrode formed on the emission layer and formed of a reflective material; and a capacitor overlapping the pixel electrode.

Abstract: A scan driving apparatus includes a plurality of sequentially arranged scan driving blocks, each including: a first node configured to receive a first clock signal; a second node configured to receive an input signal according to a second clock signal input; a first transistor having a gate electrode coupled to the first node, a first electrode configured to receive a power source voltage, and a second electrode coupled to an output terminal; and a second transistor having a gate electrode coupled to the second node, a first electrode for receiving a third clock signal, and a second electrode coupled to the output terminal. Each scan driving block is configured to receive the first, second, and third clock signals as a corresponding three clock signals among four clock signals sequentially shifted by a first period, and to output the third clock signal by being synchronized with the input signal.

Abstract: An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.

Abstract: A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.

Abstract: An OLED display includes: a substrate; a first signal line provided on the substrate; a second signal line crossing the first signal line; a thin film transistor connected to the first signal line and the second signal line; a pixel electrode connected to a drain electrode of the thin film transistor; an emission layer formed on the pixel electrode; a common electrode formed on the emission layer and formed of a reflective material; and a capacitor overlapping the pixel electrode.

Abstract: An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes a panel including pixels which are configured to control an amount of current that flows from a first power source to a second power source to generate an image of predetermined brightness. The display may also include at least one first power source line formed on a top of the panel and at least one second power source line positioned on a bottom of the panel to face the first power source line. The display may further include a first switch configured to alternately supply the first power source to the first power source line and the second power source line.

Abstract: In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.

Abstract: An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.

Abstract: A scan driving apparatus includes a plurality of sequentially arranged scan driving blocks, each including: a first node configured to receive a first clock signal; a second node configured to receive an input signal according to a second clock signal input; a first transistor having a gate electrode coupled to the first node, a first electrode configured to receive a power source voltage, and a second electrode coupled to an output terminal; and a second transistor having a gate electrode coupled to the second node, a first electrode for receiving a third clock signal, and a second electrode coupled to the output terminal. Each scan driving block is configured to receive the first, second, and third clock signals as a corresponding three clock signals among four clock signals sequentially shifted by a first period, and to output the third clock signal by being synchronized with the input signal.

Abstract: An inverter is capable of improving the reliability of driving. The inverter includes a first transistor coupled between a first power source and an output terminal of the inverter and having a gate electrode coupled to a first input terminal of the inverter, a second transistor coupled between a second power source and the output terminal, and having a gate electrode coupled to a second input terminal of the inverter, a first capacitor coupled between the gate electrode of the first transistor and the first input terminal, a second capacitor coupled between the gate electrode of the second transistor and the second input terminal, a third transistor coupled between the gate electrode of the first transistor and a reset power source, and a fourth transistor coupled between the gate electrode of the second transistor and the reset power source.

Abstract: In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.

Abstract: An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.

Abstract: A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.