Abstract: A bio-signal quality assessment apparatus may include: a bio-signal obtainer configured to obtain a bio-signal; and a processor configured to extract periodic signals from the obtained bio-signal, and determine a signal quality index based on at least one of similarity between the extracted periodic signals and signal variability of the obtained bio-signal.

Abstract: An apparatus for estimating bio-information may include: a bio-signal acquirer configured to acquire a bio-signal; and a processor configured to extract one or more first feature values from the bio-signal, determine a scale factor based on the first feature values, and to estimate bio-information based on the scale factor and the first feature values.

Abstract: An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract: A photon-counting detector configured to detect photons included in multi-energy radiation. The photon-counting detector includes a pixel area configured to absorb photons incident thereto, and bias circuits configured to supply one of a bias voltage and a bias current to electronic devices in the pixel area, wherein the bias circuits are in the pixel area.

Abstract: A photomultiplier detector cell for tomography includes a detector unit and a readOUT unit. The detector unit is configured to generate a digitized detect signal in response to receives light having a certain range of wavelength. The readOUT unit is configured to generate an output signal corresponding to the detect signal generated by the detector unit and to transmit the output signal to an external circuit. The readOUT unit is configured to transmit the output signal to the external circuit right after the detect signal is received.

Abstract: A method of calibrating a first threshold voltage that is a reference of X-ray detection for each unit cell of a plurality of unit cells of an X-ray detector may comprise detecting an X-ray by using a plurality of second threshold voltages for each of a plurality of X-rays having spectra at different energy levels; determining a correspondence relationship between energies having a maximum intensity in the spectra of X-rays and third threshold voltages at which a maximum number of photons having a same energy intensity are detected; and/or calibrating the first threshold voltage based on the determined correspondence relationship.

Abstract: A flip-flop circuit includes a first unit configured to receive a reference clock signal and a reset signal, and a second unit configured to change an output node to a first level in response to the reference clock signal and change the output node to a second level by precharging the output node in response to a signal output from the first unit according to the reset signal.

Abstract: A duty ratio correction circuit includes a duty cycle ratio controlling unit configured to generate an internal clock signal having a duty cycle ratio defined according to a first reference clock signal and a reset signal and a reset signal generating unit configured to generate the reset signal in response to a second reference clock signal and the internal clock signal fed back thereto.

Abstract: A photon-counting detector configured to detect photons included in multi-energy radiation. The photon-counting detector includes a pixel area configured to absorb photons incident thereto, and bias circuits configured to supply one of a bias voltage and a bias current to electronic devices in the pixel area, wherein the bias circuits are in the pixel area.

Abstract: A method of calibrating a first threshold voltage that is a reference of X-ray detection for each unit cell of a plurality of unit cells of an X-ray detector may comprise detecting an X-ray by using a plurality of second threshold voltages for each of a plurality of X-rays having spectra at different energy levels; determining a correspondence relationship between energies having a maximum intensity in the spectra of X-rays and third threshold voltages at which a maximum number of photons having a same energy intensity are detected; and/or calibrating the first threshold voltage based on the determined correspondence relationship.

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract: A ring oscillator including a plurality of buffer units, each of which has a cross-coupled structure, for generating clock signals using a bias voltage having a predetermined voltage level applied thereto, wherein the clock signals have a swing width corresponding to the bias voltage.

Abstract: An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

Abstract: According to example embodiments, a photomultiplier detector cell for tomography includes a detector unit and a readOUT unit. The detector unit is configured to generate a digitized detect signal in response to receives light having a certain range of wavelength. The readOUT unit is configured to generate an output signal corresponding to the detect signal generated by the detector unit and to transmit the output signal to an external circuit. The readOUT unit is configured to transmit the output signal to the external circuit right after the detect signal is received.

Abstract: A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel.

Abstract: A semiconductor memory device can optimize the layout area and current consumption based on multi-phase clock signals which are generated by dividing a source clock signal using a reset signal without a delay locked loop and a phase locked loop in order to have various phase information of low frequencies and different activation timings with a constant phase difference.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

Abstract: A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.