Abstract: A method and apparatus for dividing the frequency of an input clock signal by an odd integer is disclosed. The output of two asymmetrical clock dividers may be combined to produce a divided clock signal having a symmetrical waveform. Finite state machines may be used as asymmetrical clock dividers having desired duty cycles and relative turn-on and turn-off times to produce signals that combine to form a symmetrical divided clock signal. Alternatively, the output of an asymmetrical clock divider may be delayed by one input clock signal half-cycle and combined with the original asymmetrical signal to form a symmetrical divided clock signal.

Abstract: A circuit for providing an output current is provided. The circuit includes a differential amplifier, a transistor having a gate that is coupled to the output of the differential amplifier, a comparator, and a sense resistor that is coupled between the drain of the transistor and the input pin. One input of the differential amplifier is connected to the input pin and the other input is connected to a reference voltage. The inputs of the comparator are coupled across the sense resistor. If an external resistor is coupled to the input pin, the comparator trips. If the comparator is tripped, the current from the external resistor is mirrored to provide the output current. If the comparator is not tripped, the output current is provided from an on-chip current source.

Abstract: The performance of a bandgap reference circuit is improved by increasing the ?VBE, and thereby correspondingly decreasing the input sensitivity of the error amplifier in the control loop. The ?VBE can be increased by presenting stacked diode configurations at the amplifier inputs, by increasing the diode ratio presented at the amplifier inputs, and by providing a higher current in the CTAT leg than in the PTAT leg. The stacked diode configuration is achieved by producing isolated diodes with a triple well CMOS process. The stacked diode configuration and the triple well CMOS process also permit the input stage of the amplifier to use N-channel transistors operating in the threshold region.

Abstract: A method includes generating multiple delayed versions of a first signal using at least one first delay line, selecting at least one version of the first signal, and generating a second signal based on the first signal and the at least one selected version of the first signal. The method also includes generating multiple delayed versions of the second signal using at least one second delay line, and selecting at least one version of the second signal. In addition, the method includes modifying selection of the at least one version of the first signal and the at least one version of the second signal to achieve a desired output signal based on the at least one selected version of the second signal. This method could be used in various circuits, such as duty cycle correction circuits, frequency multiplier circuits, and digital multiphase oscillator circuits.

Abstract: A differential type delay cell includes a differential amplifier and first and second output capacitor circuits. The differential amplifier is configured to amplify a differential input signal to generate an amplified differential output signal at a pair of output nodes of the delay cell. The first and second output capacitor circuits are respectively coupled to a different one of the output nodes, and are configured to have a variable capacitance that varies in response to variation in a power supply voltage.

Abstract: A differential type delay cell includes a differential amplifier and first and second output capacitor circuits. The differential amplifier is configured to amplify a differential input signal to generate an amplified differential output signal at a pair of output nodes of the delay cell. The first and second output capacitor circuits are respectively coupled to a different one of the output nodes, and are configured to have a variable capacitance that varies in response to variation in a power supply voltage.

Abstract: A semiconductor device is provided including a printed circuit board and first, second and third rows of power and/or signal pads on the printed circuit board. A plurality of input and output buffers are also provided. Ones of the plurality of input and output buffers are provided between the first and second rows and others of the plurality of input and output buffers are provided between the second and third rows. Related methods of fabricating semiconductor devices are also provided.

Abstract: An all digital power supply system provides a supply voltage to semiconductor circuits. The power supply system utilizes an up/down counter and a pulse width modulator to output a signal into a LC network that generates the supply voltage. The width of the pulses output by the pulse width modulator are defined by an encoder that generates width information in response to a propagation delay detector that measures the propagation delay of a first clock signal when clocked by a second clock signal. The system supplies the optimum or minimum required voltage to insure that a critical path through a digital chip is met over process, voltage, and temperature (PVT) variations without the use of a band gap reference voltage source. A state machine is also used to counteract oscillations introduced by start up and load transients, thereby eliminating the need for a proportional integrator differentiator (PID).

Abstract: An input-output circuit and a current control circuit of a semiconductor memory device which is insensitive to variations in manufacturing process, in voltage levels of input-output pins, and in temperature, and can prevent undesired effects such as an excess of leakage current during operation in a test mode such as a burn-in test. The current control circuit includes first and second transmitters having CMOS transmission gates, a voltage divider, a comparator, a current control counter, a first resistor connected between a bulk of a PMOS transistor of the first CMOS transmission gate and a DC voltage, and a second resistor connected between a bulk of a PMOS transistor of the second CMOS transmission gate and a DC voltage. The first and second resistors prevent current greater than a predetermined level from leaking even though PN diodes formed in the PMOS transistors of the first and second transmitters are forward biased.