Abstract: In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.

Abstract: A semiconductor processing apparatus comprises a pyrophoric source vessel within an enclosure, the vessel containing a pyrophoric material. An air intake labyrinth extends away from the enclosure and has an inlet and an outlet. The inlet is in fluid communication with an exterior of the enclosure, and the outlet is in fluid communication with an interior of the enclosure. The labyrinth defines a tortuous path between the inlet and the outlet. In order to thermally isolate the enclosure, it can be surrounded by an air gap of at least 10 mm separating the enclosure from other components of the processing apparatus, to prevent damage to such other components. The thermal isolation can also be achieved by forming the enclosure from double walls with a 10 mm gap therebetween. The pyrophoric enclosure can have a separate exhaust duct and/or scrubber than those of a semiconductor processing reactor associated with the enclosure.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.