Abstract: Provided is a deposition apparatus including a connection channel connecting a gas inflow channel and a gas outflow channel so as to increase cleaning efficiency by providing a portion of cleaning gas to the dead space of the gas inflow channel and controlling a flow of a cleaning gas.

Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.

Abstract: A deposition apparatus includes: a substrate support having a main surface on which a substrate is placed; a body disposed on the main surface and including a hollow portion having an exposed upper portion; a plasma electrode unit provided at a inner circumferential surface of the body to separate the hollow portion into an upper space and a lower space; and a gas supply unit supplying process gas to the plasma electrode unit, wherein a gas exhaust channel extending from the lower space to an exhaust outlet provided at a top of the body is formed in the body.

Abstract: Provided is a deposition apparatus including a connection channel connecting a gas inflow channel and a gas outflow channel so as to increase cleaning efficiency by providing a portion of cleaning gas to the dead space of the gas inflow channel and controlling a flow of a cleaning gas.

Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T?(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: Provided is a deposition apparatus including a connection channel connecting a gas inflow channel and a gas outflow channel so as to increase cleaning efficiency by providing a portion of cleaning gas to the dead space of the gas inflow channel and controlling a flow of a cleaning gas.

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.

Abstract: The present invention relates to a method and apparatus for transaction securities. According to the present invention, a disposal restriction on securities can be set or canceled by setting up a security right or creating other contracts according to an enterprise declaration of will. Also, according to the present invention, securities liquidity and stability can be increased by enabling an owner of securities to dispose of the securities having a disposal restriction set through a sell restriction management agreement, as well as by imposing certain restrictions on disposal.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval.