Abstract: Provided are a light emitting device includes a first electrode and a second electrode facing each other; an emissive layer disposed between the first electrode and the second electrode and a display device including the same. The emissive layer comprises: a first emission layer disposed on the first electrode and having a hole transporting property; a second emission layer and a third emission layer disposed on the first emission layer; wherein the second emission layer comprises an organic compound having a bipolar transport property and the third emission layer has a composition different from the first emission layer and the second emission layer; wherein the first emission layer, the second emission layer, and the third emission layer comprises a plurality of quantum dots, and wherein the first emission layer, the second emission layer, and the third emission layer are configured to emit light of a same color.

Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

Abstract: Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.

Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.

Abstract: A semiconductor device comprising a fingerprint sensor configured to generate first-direction sensing data and second-direction sensing data by sensing a fingerprint image in a first direction and a second direction, respectively, which is perpendicular to the first direction; a differential sensing circuit configured to generate first-direction first differential data and second-direction first differential data by performing a differential operation on the first-direction sensing data and the second-direction sensing data, respectively; and a fingerprint processing circuit configured to generate first-direction second differential data and second-direction second differential data by performing a differential operation on the first-direction first differential data and the second-direction first differential data, respectively, and generate fingerprint data by adding the first-direction second differential data and the second-direction second differential data.

Abstract: A quantum dot device including an anode and a cathode facing each other; a quantum dot layer between the anode and the cathode; a hole transport layer between the anode and the quantum dot layer, the hole transport layer being configured to increase a hole transporting property from the anode to the quantum dot layer; an inorganic electron transport layer between the cathode and the quantum dot layer, the inorganic electron transport layer being configured to increase an electron transporting property from the cathode to the quantum dot layer; and an inorganic electron controlling layer between the cathode and the quantum dot layer, the inorganic electron controlling layer being configured to decrease an electron transporting property from the cathode to the quantum dot layer, and an electronic device including the same.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: A lock-in amplifier includes a clock signal generator configured to generate a first demodulation clock signal and a second demodulation clock signal having a phase difference of 90 degrees and a same demodulation frequency; and a detector configured to, based on an input signal, the first demodulation clock signal, and the second demodulation clock signal, provide an offset voltage corresponding to an offset of the lock-in amplifier in a first operation mode, and provide a first output voltage and a second output voltage, each of which correspond to a demodulation frequency component of the input signal in a second operation mode.

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.

Abstract: An electroluminescent device including an anode and a cathode facing each other, an emission layer disposed between the anode and the cathode, the emission layer including quantum dots, a hole auxiliary layer disposed between the emission layer and the anode and an electron auxiliary layer disposed between the emission layer and the cathode, wherein the electroluminescent device is configured such that electrons are dominant in the emission layer and a logarithmic value (log (HT/ET)) of a hole transport capability (HT) relative to an electron transport capability (ET) is less than or equal to about ?1, or the electroluminescent device is configured such that holes are dominant in the emission layer and the logarithmic log value (log (HT/ET)) of the hole transport capability (HT) relative to the electron transport capability (ET) is greater than or equal to about 0.5.

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).

Abstract: An electroluminescent device and a display device including the same are provided. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including at least two light emitting particles; a hole transport layer disposed between the first electrode and the emission layer; and an electron transport layer disposed between the emission layer and the second electrode and including at least two different organic semiconductor compounds, wherein a first root-mean surface roughness of a surface of the electron transport layer obtained using a laser interferometer is in a range from about 0.5 nanometers to about 3 nanometers.

Abstract: A light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and an electron auxiliary layer disposed between the emission layer and the second electrode, the electron auxiliary layer including nanoparticles and a small molecule organic compound and a display device including the same. The nanoparticles include a metal oxide including zinc, and an electron mobility of the small molecule organic compound is less than an electron mobility of the nanoparticles.