Patents by Inventor Dae-hyeon Kim
Dae-hyeon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12266656Abstract: A semiconductor device includes a substrate with first and second regions separated from each other, a laminate structure including at least one sacrificial layer and at least one active layer alternately stacked on the substrate, a first isolation insulating layer on the laminate structure on the first region, a second isolation insulating layer on the laminate structure on the second region, the second isolation insulating layer having a same thickness as the first isolation insulating layer, a first upper active pattern spaced apart from the first isolation insulating layer, a first gate electrode surrounding at least a portion of the first upper active pattern, a second upper active pattern spaced apart from the second isolation insulating layer, and a second gate electrode surrounding at least a portion of the second upper active pattern, wherein top surfaces of the first and second isolation insulating layers are at different heights.Type: GrantFiled: March 24, 2021Date of Patent: April 1, 2025Assignee: Samsung Electronics Co., Ltd.Inventors: Mun Hyeon Kim, Sung Min Kim, Dae Won Ha
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Publication number: 20250105049Abstract: Disclosed is a substrate processing apparatus including: a processing container having a processing space therein; a support unit for supporting and rotating a substrate within the processing space; and a nozzle unit for supplying a treatment solution to the substrate, in which the processing container includes a plurality of cups that encloses the processing space and is provided so that openings through which the treatment solution is introduced are stacked in an up and down direction, and each of the plurality of cups includes: a sidewall; and an upper wall extending from the sidewall toward the processing space, and an inner end of an upper wall of a first cup, of which the upper wall is located at the uppermost side among the plurality of cups, protrudes further toward the processing space than an inner end of an upper wall of another cup.Type: ApplicationFiled: September 25, 2024Publication date: March 27, 2025Applicant: Semes Co., LtdInventors: Seung Eun NA, Dae Hun KIM, Hyun Woo BAE, Seong Hyeon KIM
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Patent number: 12262021Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.Type: GrantFiled: February 2, 2024Date of Patent: March 25, 2025Assignees: Electronics and Telecommunications Research Institute, INDUSTRY ACADEMY COOPERATION FOUNDATION OF SEJONG UNIVERSITY, CHIPS&MEDIA, INC, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION KOREA AEROSPACE UNIVERSITYInventors: Sung Chang Lim, Jung Won Kang, Ha Hyun Lee, Jin Ho Lee, Hui Yong Kim, Yung Lyul Lee, Ji Yeon Jung, Nam Uk Kim, Myung Jun Kim, Yang Woo Kim, Dae Yeon Kim, Jae Gon Kim, Do Hyeon Park
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Patent number: 12261204Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on the substrate, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a source/drain region on at least one side of the gate electrode, a source/drain contact extending into the source/drain region and including a filling layer and a barrier layer along a sidewall of the filling layer, and a silicide layer between the source/drain region and the filling layer, the silicide layer including a first sidewall in contact with the filling layer and a second sidewall in contact with the source/drain region, wherein the barrier layer is not between the filling layer and the source/drain region.Type: GrantFiled: March 25, 2024Date of Patent: March 25, 2025Assignee: Samsung Electronics Co., Ltd.Inventors: Mun Hyeon Kim, Kern Rim, Dae Won Ha
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Patent number: 12253505Abstract: An embodiment contact combustion type hydrogen sensor includes a substrate including silicon, lamination layers disposed over a top surface of the substrate and including a first thin oxide layer and a first thin nitride layer, a heater over the lamination layers, the heater including a connecting part electrically connected to a predetermined part and a heating part configured to be heated in response to power being applied, insulating layers covering a top surface of the heater and configured to perform an insulating operation, the insulating layers including a second thin oxide layer and a second thin nitride layer, a platinum catalyst over the insulating layers and configured to be heated by the heater to perform a hydrogen reaction, and a slit outside the heating part and passing through the substrate and the lamination layers.Type: GrantFiled: May 12, 2022Date of Patent: March 18, 2025Assignees: Hyundai Motor Company, Kia CorporationInventors: Il Seon Yoo, Hyun Soo Kim, Jang Hyeon Lee, Dong Gu Kim, Dae Sung Kwon
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Publication number: 20250070100Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0?x?1, 0?y?1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.Type: ApplicationFiled: November 7, 2024Publication date: February 27, 2025Applicant: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon CHAE, Chang Yeon KIM, Ho Joon LEE, Seong Gyu JANG, Chung Hoon LEE, Dae Sung CHO
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Publication number: 20250033471Abstract: A non-contact interface device for a vehicle and a method for controlling the same, may display an operation system menu for a driver and passengers to operate various kinds of devices of the vehicle as a hologram, enable a user to operate the displayed operation system menu in a non-contact manner by use of the user's finger or the like, and provide the user with a tactile feedback for a non-contact operation, so that the user can recognize whether to have operated the menu.Type: ApplicationFiled: November 20, 2023Publication date: January 30, 2025Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, Korea Institute of Science and TechnologyInventors: Dong Gu Kim, Jang Hyeon Lee, Dae Sung Kwon, Hyun Soo Kim, Il Seon Yoo, Byung Chul Lee, Seong Hun Cho, Seung Hyub Baek, Min Seok Kim, Soo Young Jung
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Patent number: 12027486Abstract: The present invention relates to a substrate aligning device for bonding a first substrate (100) and a second substrate (200), wherein the first substrate (100) and the second substrate (200) have respective bonding surfaces via which the first substrate (100) and the second substrate (200) are bonded face-to-face with each other, and respective non-bonding surfaces which are located on the reverse sides from the bonding surfaces.Type: GrantFiled: July 19, 2019Date of Patent: July 2, 2024Assignee: L TRIN.CO., LTDInventors: Yong Won Cha, Mi Ok Cho, Ji Soo Cho, Dae Hyeon Kim
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Publication number: 20220052018Abstract: The present invention relates to a substrate aligning device for bonding a first substrate (100) and a second substrate (200), wherein the first substrate (100) and the second substrate (200) have respective bonding surfaces via which the first substrate (100) and the second substrate (200) are bonded face-to-face with each other, and respective non-bonding surfaces which are located on the reverse sides from the bonding surfaces.Type: ApplicationFiled: July 19, 2019Publication date: February 17, 2022Applicant: L TRIN.CO.,LTDInventors: Yong Won CHA, Mi Ok CHO, Ji Soo CHO, Dae Hyeon KIM
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Patent number: 10548847Abstract: The present invention relates to a method of manufacturing an orally disintegrating dosage form which masks a bitter or unpleasant taste. A composition including a ratio of excipients and a coated active substance prevents a coating layer on the active substance from being destroyed during manufacture.Type: GrantFiled: July 20, 2015Date of Patent: February 4, 2020Assignee: CHOONGWAE PHARMA CORPORATIONInventors: Mikyoung Hahn, Jin-Woo Choi, Dae-Hyeon Kim
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Patent number: 10439613Abstract: An integrated circuit for a physically unclonable function (PUF) includes first and second PUF cells and a combination circuit. The first and second PUF cells respectively output first and second cell signals having unique levels based on a threshold level of a logic gate. The combination circuit includes a first stage that generates a first combination signal based on the first and second cell signals. The first and second PUF cells respectively include first and second logic gates to respectively output the first and second cell signals. The combination circuit includes a third logic gate that receives the first and second cell signals and outputs the first combination signal. The third logic gate has a same structure as each of the first and second logic gates.Type: GrantFiled: June 11, 2018Date of Patent: October 8, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Bohdan Karpinskyy, Dae-hyeon Kim, Mi-jung Noh, Sang-wook Park, Yong-ki Lee, Yun-hyeok Choi
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Patent number: 10308566Abstract: Provided are a separation system for easily recovering normal butene from an olefin fraction including isobutene, isobutane, 1-butene, 2-butene, and normal butane, and a separation process system using the method. Since the separation system may easily convert 1-butene included in the olefin fraction to 2-butene, normal butene may be effectively separated and recovered by factional distillation and each recovered fraction may be easily refluxed even if the use of a reflux system using a refrigerant is reduced or excluded. Thus, economic efficiency may be improved and simultaneously, separation efficiency may be increased.Type: GrantFiled: January 17, 2019Date of Patent: June 4, 2019Assignee: LG CHEM, LTD.Inventors: Dae Hyeon Kim, Soo Hwan Hwang, Jong Ku Lee, Jeong Seok Lee
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Publication number: 20190152878Abstract: Provided are a separation system for easily recovering normal butene from an olefin fraction including isobutene, isobutane, 1-butene, 2-butene, and normal butane, and a separation process system using the method. Since the separation system may easily convert 1-butene included in the olefin fraction to 2-butene, normal butene may be effectively separated and recovered by factional distillation and each recovered fraction may be easily refluxed even if the use of a reflux system using a refrigerant is reduced or excluded. Thus, economic efficiency may be improved and simultaneously, separation efficiency may be increased.Type: ApplicationFiled: January 17, 2019Publication date: May 23, 2019Inventors: Dae Hyeon KIM, Soo Hwan HWANG, Jong Ku LEE, Jeong Seok LEE
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Patent number: 10243749Abstract: A physical unclonable function (PUF) circuit and a PUF system including the same are provided. The PUF circuit includes a plurality of PUF cells each configured to generate an output voltage by dividing a power voltage, a reference voltage generator configured to generate a first reference voltage by dividing the power voltage, and a comparing unit configured to sequentially compare the output voltages of the plurality of PUF cells with the first reference voltage to output data values of the plurality of PUF cells.Type: GrantFiled: January 15, 2018Date of Patent: March 26, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-wook Park, Dae-hyeon Kim, Mi-jung Noh, Bohdan Karpinskyy, Yong-ki Lee, Yun-hyeok Choi
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Patent number: 10227270Abstract: Provided are a separation method for easily recovering normal butene from an olefin fraction including isobutene, isobutane, 1-butene, 2-butene, and normal butane, and a separation process system using the method. Since the separation method according to the present invention may easily convert 1-butene included in the olefin fraction to 2-butene, normal butene may be effectively separated and recovered by factional distillation and each recovered fraction may be easily refluxed even if the use of a reflux system using a refrigerant is reduced or excluded. Thus, economic efficiency may be improved and simultaneously, separation efficiency may be increased.Type: GrantFiled: April 28, 2016Date of Patent: March 12, 2019Assignee: LG CHEM, LTD.Inventors: Dae Hyeon Kim, Soo Hwan Hwang, Jong Ku Lee, Jeong Seok Lee
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Publication number: 20190068190Abstract: An integrated circuit for a physically unclonable function (PUF) includes first and second PUF cells and a combination circuit. The first and second PUF cells respectively output first and second cell signals having unique levels based on a threshold level of a logic gate. The combination circuit includes a first stage that generates a first combination signal based on the first and second cell signals. The first and second PUF cells respectively include first and second logic gates to respectively output the first and second cell signals. The combination circuit includes a third logic gate that receives the first and second cell signals and outputs the first combination signal. The third logic gate has a same structure as each of the first and second logic gates.Type: ApplicationFiled: June 11, 2018Publication date: February 28, 2019Inventors: Bohdan KARPINSKYY, Dae-hyeon KIM, Mi-jung NOH, Sang-wook PARK, Yong-ki LEE, Yun-hyeok CHOI
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Publication number: 20180337793Abstract: A physical unclonable function (PUF) circuit and a PUF system including the same are provided. The PUF circuit includes a plurality of PUF cells each configured to generate an output voltage by dividing a power voltage, a reference voltage generator configured to generate a first reference voltage by dividing the power voltage, and a comparing unit configured to sequentially compare the output voltages of the plurality of PUF cells with the first reference voltage to output data values of the plurality of PUF cells.Type: ApplicationFiled: January 15, 2018Publication date: November 22, 2018Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-wook Park, Dae-hyeon Kim, Mi-jung Noh, Bohdan Karpinskyy, Yong-ki Lee, Yun-hyeok Choi
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Patent number: 10066514Abstract: Provided is a method for recycling energy in process of butadiene preparation, which includes, in the process of preparing butadiene using oxidative dehydrogenation reaction, steps of: a) supplying part or all of a light gas discharged from a solvent absorption tower to a turbine to produce electricity; b) passing the light gas passed through the turbine through one or more device units provided with a heat exchanger; and c) feeding the light gas passed through the device units provided with the heat exchanger into a reactor, according to which more economical butadiene preparation process is provided, by reducing net energy value required in process of butadiene preparation using oxidative dehydrogenation reaction.Type: GrantFiled: July 2, 2015Date of Patent: September 4, 2018Assignee: LG CHEM, LTD.Inventors: Mi Kyung Kim, Jeong Seok Lee, Jae Ik Lee, Dae Hyeon Kim, Jong Ku Lee
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Patent number: 10018080Abstract: Provided is a method for recycling energy in process of butadiene preparation, which includes, in the process of preparing butadiene using oxidative dehydrogenation reaction, steps of: a) supplying part or all of a light gas discharged from a solvent absorption tower to a turbine to produce electricity; b) passing the light gas passed through the turbine through one or more device units provided with a heat exchanger; and c) feeding the light gas passed through the device units provided with the heat exchanger into a reactor, according to which more economical butadiene preparation process is provided, by reducing net energy value required in process of butadiene preparation using oxidative dehydrogenation reaction.Type: GrantFiled: July 2, 2015Date of Patent: July 10, 2018Assignee: LG CHEM, LTD.Inventors: Mi Kyung Kim, Jeong Seok Lee, Jae Ik Lee, Dae Hyeon Kim, Jong Ku Lee
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Method of recovering absorption solvent in butadiene production process by oxidative dehydrogenation
Patent number: 9919260Abstract: The present invention relates to a method of recovering an absorption solvent in a butadiene production process through oxidative dehydrogenation, the method including: a) transferring a light gas discharged from an upper portion of an absorption tower to a wash column; and b) recovering the absorption solvent included in the light gas by a solvent circulating in the wash column. Since an absorption solvent may be prevented from being introduced into a reactor, or being discharged to an outside of a system, economic efficiency of a butadiene production process is improved.Type: GrantFiled: November 21, 2014Date of Patent: March 20, 2018Assignee: LG CHEM, LTD.Inventors: Dae Hyeon Kim, Jeong Seok Lee, Mi Kyung Kim, Jae IK Lee, Jong Ku Lee