Abstract: Provided is an organic light-emitting diode display device (100) in which an anode electrode (134) extends to cover sides of a reflective metal (131) below the anode electrode (134).

Abstract: An organic light emitting display device in which a sidewall of a reflective metal layer in a blue pixel region is covered with an inorganic film and in which the reflective metal layer is thus prevented from being damaged or rendered defective when performing subsequent processes, such as etching and cleaning, for forming an anode on the reflective metal layer.

Abstract: Provided is an organic light-emitting diode display device (100) in which an anode electrode (134) extends to cover sides of a reflective metal (131) below the anode electrode (134).

Abstract: An organic light emitting display device in which a sidewall of a reflective metal layer in a blue pixel region is covered with an inorganic film and in which the reflective metal layer is thus prevented from being damaged or rendered defective when performing subsequent processes, such as etching and cleaning, for forming an anode on the reflective metal layer.

Abstract: A display substrate includes a substrate, a plurality of first sensing loops and second sensing loops, an insulating layer covering the first and second sensing loops, a plurality of bridges disposed on the insulating layer, a gate line disposed on the insulating layer, and a transistor connected to the gate line, the transistor being disposed on the insulating layer. The first sensing loops are arranged on the substrate in a first direction at a predetermined interval. The second sensing loops are arranged on the substrate in a second direction different from the first direction at a predetermined interval. The second sensing loops are electrically separated from the first sensing loops. Each of the second sensing loops includes passing regions at which the first sensing loops pass through. One side of each of the first sensing loops and one side of each of the second sensing loops are open.

Abstract: A display substrate includes a substrate, a plurality of first sensing loops and second sensing loops, an insulating layer covering the first and second sensing loops, a plurality of bridges disposed on the insulating layer, a gate line disposed on the insulating layer, and a transistor connected to the gate line, the transistor being disposed on the insulating layer. The first sensing loops are arranged on the substrate in a first direction at a predetermined interval. The second sensing loops are arranged on the substrate in a second direction different from the first direction at a predetermined interval. The second sensing loops are electrically separated from the first sensing loops. Each of the second sensing loops includes passing regions at which the first sensing loops pass through. One side of each of the first sensing loops and one side of each of the second sensing loops are open.

Abstract: A firmware updating method for the new node includes (a) a new node searching for neighbor nodes located within a predetermined distance, (b) the new node designating a parent node among the searched neighbor nodes, (c) in the case where the plurality of nodes include a join receiving state for joining the new node to the wireless sensor network, the designated parent node and the new node establishing a communication link by using the join receiving state, (d) the parent node transmitting firmware to the new node through the established communication link and (e) the new node receiving the firmware from the parent node, updating existing firmware with the received firmware, and driving the updated firmware to be jointed to the wireless network.

Abstract: A method for updating firmware of a plurality of nodes constituting a wireless sensor network is disclosed. The wireless sensor network includes a server, a gateway and the plurality of nodes. The firmware to be updated is transmitted from the server through the gateway to an uppermost node. The firmware is sequentially transmitted to the plurality of nodes from the uppermost node to a lowermost node using wireless communication, and the respective nodes, which have received the firmware, record the firmware in their own memory. When the recording of the firmware is completed in all the nodes, boot programs of the respective nodes are run and the firmware, stored in the memory, is recorded in program memory, the firmware recorded in the nodes are executed, and the nodes constitute a new network while communicating with the peripheral nodes thereof.

Abstract: Provided is a communication quality measurement method and a portable communication quality measurement device for wireless sensor network configuration.

Abstract: Provided is a firmware updating method for a new node in a wireless sensor network including a plurality of nodes. The firmware updating method for the new node (a) a new node searching for neighbor nodes located within a predetermined distance; (b) the new node designating a parent node among the searched neighbor nodes; (c) in the case where the plurality of nodes include a join receiving state for joining the new node to the wireless sensor network, the designated parent node and the new node establishing a communication link by using the join receiving state; (d) the parent node transmitting firmware to the new node through the established communication link; and (e) the new node receiving the firmware from the parent node, updating existing firmware with the received firmware, and driving the updated firmware to be jointed to the wireless network.

Abstract: A method for updating firmware of a plurality of nodes constituting a wireless sensor network is disclosed. The wireless sensor network includes a server, a gateway and the plurality of nodes. The firmware to be updated is transmitted from the server through the gateway to an uppermost node. The firmware is sequentially transmitted to the plurality of nodes from the uppermost node to a lowermost node using wireless communication, and the respective nodes, which have received the firmware, record the firmware in their own memory. When the recording of the firmware is completed in all the nodes, boot programs of the respective nodes are run and the firmware, stored in the memory, is recorded in program memory, the firmware recorded in the nodes are executed, and the nodes constitute a new network while communicating with the peripheral nodes thereof.

Abstract: Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.

Abstract: A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.

Abstract: A method and apparatus for preventing an adjacent track erase effect due to a magnetic head. In the method, a write command is received, an ambient temperature of a hard disc drive is measured, and whether the ambient temperature exceeds a threshold temperature is determined. If the ambient temperature exceeds the threshold temperature, the intensity of a write current is adjusted according to the position of a magnetic head on the hard disc drive. If an overshooting value of the write current exceeds a predetermined steady-state value, the overshooting value of the write current is adjusted. Applying the write current having the intensity and the overshooting value adjusted to the magnetic head. An algorithm having writing intervals can also be used in a hard disc drive. Thus, a writing field can be minimized and made suitable for variations in the temperature of the hard disc drive and coercivity of a magnetic disc so that an adjacent track erase effect can be reduced.

Abstract: Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.

Abstract: A plasma display panel having a trench discharge cell and a method of fabricating the same are disclosed in the present invention. The plasma display panel having a plurality of trench discharge cells includes a transparent substrate having at least one isolated trench in a discharge cell, one or more sustain electrodes in each trench and extended to outside of the trench, one or more bus electrodes on the sustain electrode, and a dielectric layer formed on an entire surface of the transparent substrate including the sustain electrodes, the bus electrodes, and the trench, wherein the dielectric layer has a first portion on the bottom of the trench, a second portion outside the trench of the substrate, and a third portion on side-walls of the trench, and wherein the trench has a first length perpendicular to a direction of the sustain electrodes and a second length parallel to a direction of the sustain electrodes and the first length is greater than the second length.

Abstract: Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.

Abstract: Provided is helical resonator plasma processing apparatus. The plasma processing apparatus comprises a process chamber having a substrate holder for supporting a substrate, a dielectric tube disposed on the process chamber to communicate with the process chamber, a helix coil wounded around the dielectric tube, and an RF power source to supply RF power to the helix coil. The dielectric tube has a double tube shape and comprises an inner tube and an outer tube, and a plasma source gas inlet port to supply plasma source gas into a space between the inner tube and the outer tube is disposed in the outer tube. A control electrode to control plasma potential is disposed in the dielectric tube. This plasma processing apparatus provides a uniform plasma density distribution along a radial direction of a wafer, and easy control of the plasma potential in the process chamber.

Abstract: A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.

Abstract: A method of forming an non-oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an inert gas into the process chamber, ionizing the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the non-oxide thin film on the substrate from the negatively charged ions.