Abstract: The invention provides a color conversion arrangement, a lighting unit, a solid state light emitter package, a luminaire and a specific use of a graphene layer. A color conversion arrangement (140) with the first aspect comprises a first luminescent layer (110), a supporting layer (106) and a first graphene layer (108). The color conversion arrangement (140) is for converting light of a first color to light of another color. The first luminescent layer (110) comprises a first luminescent material which absorbs a portion of light of a first spectral distribution comprising the first color and converts at least a portion of the absorbed light towards light of a second spectral distribution. The supporting layer (106) supports the luminescent layer (110). The first graphene layer (108) thermally conducts heat in a lateral direction such that temperature differences in the color conversion arrangement (140) are reduced. Different arrangements of the layers of the color conversion arrangement (140) are provided.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode; a second electrode; an organic light emissive layer arranged between said first electrode and said second electrode; and an organic charge transport layer arranged between said first electrode and said emissive layer, wherein i) the charge transport layer is patterned or provided with a periodic surface structure on a surface of the charge transport layer facing the emissive layer, and/or ii) an alignment layer which allows for charge transport to the emissive layer is provided between said charge transport layer and said emissive layer, which alignment layer promotes alignment of the optical dipoles of molecules of said light emissive layer towards a common preferred direction of the molecular axes. The use of the patterned or structured charge transport layer and/or the alignment layer provides improved light out coupling from the OLED layer stack, i.e. increased external quantum efficiency.

Abstract: Method for producing a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: Low cost large area photodetector arrays are provided. In a first embodiment, the photodetectors comprise an inorganic photoelectric conversion material formed in a single thick layer of material. In a second embodiment, the photodetectors comprise a lamination of several thin layers of an inorganic photoelectric conversion material, the combined thickness of which is large enough to absorb incoming x-rays with a high detector quantum efficiency. In a third embodiment, the photodetectors comprise a lamination of several layers of inorganic or organic photoelectric conversion material, wherein each layer has a composite scintillator coating.

Abstract: The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode; a second electrode; an organic light emissive layer arranged between said first electrode and said second electrode; and an organic charge transport layer arranged between said first electrode and said emissive layer, wherein i) the charge transport layer is patterned or provided with a periodic surface structure on a surface of the charge transport layer facing the emissive layer, and/or ii) an alignment layer which allows for charge transport to the emissive layer is provided between said charge transport layer and said emissive layer, which alignment layer promotes alignment of the optical dipoles of molecules of said light emissive layer towards a common preferred direction of the molecular axes. The use of the patterned or structured charge transport layer and/or the alignment layer provides improved light out coupling from the OLED layer stack, i.e. increased external quantum efficiency.

Abstract: The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode (102); a second electrode (105); an organic light emissive layer (104) arranged between said first electrode and said second electrode; and an organic charge transport layer (103) arranged between said first electrode and said emissive layer, wherein i) the charge transport layer is patterned or provided with a periodic surface structure on a surface of the charge transport layer facing the emissive layer, and/or ii) an alignment layer (406) which allows for charge transport to the emissive layer is provided between said charge transport layer and said emissive layer, which alignment layer promotes alignment of the optical dipoles of molecules of said light emissive layer towards a common preferred direction of the molecular axes. The use of the patterned or structured charge transport layer and/or the alignment layer provides improved light out coupling from the OLED layer stack, i.e.

Abstract: The invention provides a color conversion arrangement, a lighting unit, a solid state light emitter package, a luminaire and a specific use of a graphene layer. A color conversion arrangement (140) with the first aspect comprises a first luminescent layer (110), a supporting layer (106) and a first graphene layer (108). The color conversion arrangement (140) is for converting light of a first color to light of another color. The first luminescent layer (110) comprises a first luminescent material which absorbs a portion of light of a first spectral distribution comprising the first color and converts at least a portion of the absorbed light towards light of a second spectral distribution. The supporting layer (106) supports the luminescent layer (110). The first graphene layer (108) thermally conducts heat in a lateral direction such that temperature differences in the color conversion arrangement (140) are reduced. Different arrangements of the layers of the color conversion arrangement (140) are provided.

Abstract: Disclosed is a semiconductor device (1) for determining NO concentrations in fluids such as exhaled breath. The device (1) typically comprises a pair of electrodes (18) separated from each other to define a channel region (16) in an organic semiconductor (14), a gate structure (10) for controlling said channel region, and a receptor layer (22) at least partially overlapping said channel region, said receptor layer comprising a porphine or phtalocyanine coordination complex including a group III-XII transition metal ion or a lead (Pb) ion for complexing NO. Such a semiconductor device is capable of sensing NO concentrations in the ppb range.

Abstract: The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode (102); a second electrode (105); an organic light emissive layer (104) arranged between said first electrode and said second electrode; and an organic charge transport layer (103) arranged between said first electrode and said emissive layer, wherein i) the charge transport layer is patterned or provided with a periodic surface structure on a surface of the charge transport layer facing the emissive layer, and/or ii) an alignment layer (406) which allows for charge transport to the emissive layer is provided between said charge transport layer and said emissive layer, which alignment layer promotes alignment of the optical dipoles of molecules of said light emissive layer towards a common preferred direction of the molecular axes. The use of the patterned or structured charge transport layer and/or the alignment layer provides improved light out coupling from the OLED layer stack, i.e.

Abstract: Low cost large area photodetector arrays are provided. In a first embodiment, the photodetectors comprise an inorganic photoelectric conversion material formed in a single thick layer of material. In a second embodiment, the photodetectors comprise a lamination of several thin layers of an inorganic photoelectric conversion material, the combined thickness of which is large enough to absorb incoming x-rays with a high detector quantum efficiency. In a third embodiment, the photodetectors comprise a lamination of several layers of inorganic or organic photoelectric conversion material, wherein each layer has a composite scintillator coating.

Abstract: Disclosed is a semiconductor device (1) for determining NO concentrations in fluids such as exhaled breath. The device (1) typically comprises a pair of electrodes (18) separated from each other to define a channel region (16) in an organic semiconductor (14), a gate structure (10) for controlling said channel region, and a receptor layer (22) at least partially overlapping said channel region, said receptor layer comprising a porphine or phtalocyanine coordination complex including a group III-XII transition metal ion or a lead (Pb) ion for complexing NO. Such a semiconductor device is capable of sensing NO concentrations in the ppb range.

Abstract: The present invention relates to a dual gate field-effect transistor (1) comprising a first and a second dielectric layer (6,7), a first and a second gate electrode (9,11) and an assembly (2) of at least one source electrode (3), at least one drain electrode (4) and at least one organic semiconductor (5), wherein—the source electrode (3) and the drain electrode (4) are in contact with the semiconductor (5), the assembly (2) is located between the first dielectric layer (6) and the second dielectric layer (7), the first dielectric layer (6) is located between the first gate electrode (9) and a first side (8) of the assembly (2), and the second dielectric layer (7) is located between the second gate electrode (11) and a second side (10) of the assembly (2), wherein the organic semi-conductor (5) is an organic ambipolar conduction semiconductor (12) which enables at least one electron injection area (18) at the first side (8) and at least one hole injection area (18) at the second side (19) of the assembly (2).

Abstract: A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with—and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.

Abstract: Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.

Abstract: Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.

Abstract: The present invention relates to non-volatile ferroelectric memory devices (30) comprising a transistor (22) and a capacitor (23), and more particularly to non-volatile electrically erasable programmable ferroelectric memory elements, and a method for processing such non-volatile ferroelectric memory devices (30). The method according to the invention comprises a limited number of mask steps because a gate dielectric layer of the transistor (22) and a dielectric layer of the capacitor (23) are made from the same organic or inorganic ferroelectric layer (14).

Abstract: A gas analyser (12) comprises a transistor (1) that has a cavity (7) between its gate (2) and its organic semiconductor (6) based conducting channel. In operation a component from a gas sample introduced into the cavity (7) may absorb onto an exposed absorption sensitive surface portion of the organic semiconductor (6). A detector (13) detects a change in the threshold voltage of the transistor caused by the component absorbing on the exposed surface portion. In response to detecting this change, the detector generates a measurement signal indicative of a concentration of the component in the sample.

Abstract: The present invention provides a field-effect transistor and method for the fabrication of a field-effect transistor by deposition on a substrate (480), which method comprises a wet chemical deposition of materials that react to form a semi-conducting material. The materials deposited include cadmium, zinc, lead, tin, bismuth, antimony, indium, copper or mercury. The wet chemical deposition may be by chemical bath deposition or spray pyrolysis. A vacuum deposition process is not required.