Abstract: According to an embodiment, a polishing device which polishes a surface of a polishing target, includes a sensor, an end point detector, and an end point condition setter. The sensor senses a characteristic value correlated with a state of the surface during polishing. The end point detector detects that the characteristic value or a polishing time satisfies an end point condition corresponding to an end point of the polishing. The end point condition setter sets the end point condition in accordance with at least one of device information about the polishing device and polishing target information about the polishing target, and outputs the set end point condition to the end point detector.

Abstract: According to one embodiment, there is provided a cleaning apparatus including a substrate cleaner and a member cleaner. The substrate cleaner has a substrate cleaning member placed over a first region to be opposite a substrate and a second region different from the first region. The member cleaner is placed adjacent to the second region.

Abstract: According to an embodiment, a polishing device which polishes a surface of a polishing target, includes a sensor, an end point detector, and an end point condition setter. The sensor senses a characteristic value correlated with a state of the surface during polishing. The end point detector detects that the characteristic value or a polishing time satisfies an end point condition corresponding to an end point of the polishing. The end point condition setter sets the end point condition in accordance with at least one of device information about the polishing device and polishing target information about the polishing target, and outputs the set end point condition to the end point detector.

Abstract: A polishing apparatus includes a polisher, a holder, and a supplier. The polisher polishes a semiconductor substrate or a polishing target film on a semiconductor substrate. The holder holds the semiconductor substrate and presses the semiconductor substrate or the polishing target film against the polisher to rub the semiconductor substrate or the polishing target film against the polisher. The supplier has a nozzle that is to be inserted to the inside of the polisher and that supplies a polishing solution to the inside of the polisher.

Abstract: In one embodiment, a polishing pad dresser includes a first base portion, and first convex portions provided in a first region of the first base portion. Furthermore, a width of the first convex portions is 1 to 10 ?m, a height of the first convex portions is 0.5 to 10 ?m, and a density of the first convex portions in the first region is 0.1 to 50%.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a first cleaner and a second cleaner. The first cleaner polishes a semiconductor substrate or a polishing target material on the semiconductor substrate with an abrasive and then cleans a top face of the semiconductor substrate or of the polishing target material while the semiconductor substrate is rotated. The second cleaner rubs an end portion of the semiconductor substrate with a physical contact according to rotation of the semiconductor substrate.

Abstract: According to one embodiment, there is provided a cleaning apparatus including a substrate cleaner and a member cleaner. The substrate cleaner has a substrate cleaning member placed over a first region to be opposite a substrate and a second region different from the first region. The member cleaner is placed adjacent to the second region.

Abstract: A retainer ring configured to be attachable, at a first side thereof, to a polish head of a polish apparatus configured to polish a polish object by depressing the polish object against a polish pad is disclosed. The retainer ring is configured to depress the polish pad at a second side thereof. The retainer ring includes a contact surface contacting the polish pad. The contact surface applies depressing force on the polish pad. The depressing force is directed from a polish head side and is applied so as to be centered on an imaginary circle of pressure center having a radius falling substantially in a middle of an inner radius of the retainer ring and an outer radius of the retainer ring. An area of the contact surface is greater in a first region inside the circle of pressure center than in a second region outside the circle of pressure center.

Abstract: A polish apparatus including a rotatable table configured to receive a polish pad having a polish surface; a polish head configured to hold a polish object and configured to be capable of placing the polish object in contact with the polish surface while holding the polish object; at least one contact portion being provided with a contact surface and configured to be capable of contacting the polish surface when the table is in rotation; and a measurement portion configured to measure a state of the contact surface of the contact portion being configured to contact the polish surface of the polish pad.

Abstract: In one embodiment, a polishing pad dresser includes a first base portion, and first convex portions provided in a first region of the first base portion. Furthermore, a width of the first convex portions is 1 to 10 ?m, a height of the first convex portions is 0.5 to 10 ?m, and a density of the first convex portions in the first region is 0.1 to 50%.

Abstract: A polishing apparatus includes a polisher, a holder, and a supplier. The polisher polishes a semiconductor substrate or a polishing target film on a semiconductor substrate. The holder holds the semiconductor substrate and presses the semiconductor substrate or the polishing target film against the polisher to rub the semiconductor substrate or the polishing target film against the polisher. The supplier has a nozzle that is to be inserted to the inside of the polisher and that supplies a polishing solution to the inside of the polisher.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a first cleaner and a second cleaner. The first cleaner polishes a semiconductor substrate or a polishing target material on the semiconductor substrate with an abrasive and then cleans a top face of the semiconductor substrate or of the polishing target material while the semiconductor substrate is rotated. The second cleaner rubs an end portion of the semiconductor substrate with a physical contact according to rotation of the semiconductor substrate.

Abstract: A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.

Abstract: A polish apparatus including a rotatable table configured to receive a polish pad having a polish surface; a polish head configured to hold a polish object and configured to be capable of placing the polish object in contact with the polish surface while holding the polish object; at least one contact portion being provided with a contact surface and configured to be capable of contacting the polish surface when the table is in rotation; and a measurement portion configured to measure a state of the contact surface of the contact portion being configured to contact the polish surface of the polish pad.

Abstract: A retainer ring configured to be attachable, at a first side thereof, to a polish head of a polish apparatus configured to polish a polish object by depressing the polish object against a polish pad is disclosed. The retainer ring is configured to depress the polish pad at a second side thereof. The retainer ring includes a contact surface contacting the polish pad. The contact surface applies depressing force on the polish pad. The depressing force is directed from a polish head side and is applied so as to be centered on an imaginary circle of pressure center having a radius falling substantially in a middle of an inner radius of the retainer ring and an outer radius of the retainer ring. An area of the contact surface is greater in a first region inside the circle of pressure center than in a second region outside the circle of pressure center.

Abstract: A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.

Abstract: A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

Abstract: A polishing apparatus includes a substrate holder configured to hold and rotate a substrate, a press pad configured to press a polishing tape having a polishing surface against a bevel portion of the substrate held by the substrate holder, and a feeding mechanism configured to cause the polishing tape to travel in its longitudinal direction. The press pad includes a hard member having a pressing surface for pressing the bevel portion of the substrate through the polishing tape, and at least one elastic member for pressing the hard member against the bevel portion of the substrate through the belt-shaped polishing tool.

Abstract: A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

Abstract: A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.