Abstract: A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.

Abstract: There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.

Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

Abstract: A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

Abstract: There is disclosed a polishing method which comprises positioning a treating substrate held by a substrate holder over a turntable so as to enable the treating substrate to press-contact with a polishing region of a polishing surface of the turntable, the polishing surface having the polishing region where the treating substrate moves relative thereto, and a non-polishing region surrounded by the polishing region, introducing a first liquid and a second liquid into a slurry mixing section disposed at the non-polishing region of the polishing surface, at least one of the first and second liquids containing an abrasive component, and applying a mixed slurry comprising the first and second liquids which have been mixed together in advance in the slurry mixing section to the polishing surface while rotating the turntable to enable the treating substrate to move relative to the polishing region, thereby polishing the treating substrate.

Abstract: A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

Abstract: A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

Abstract: A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

Abstract: A chemical mechanical polishing method comprises preparing a workpiece to be treated and chemically and mechanically polishing the workpiece to be treated by pressing the workpiece to be treated against a rotating disk carrying a piece of abrasive cloth bonded to the surface thereof at a first position on the disk, while dropping abrasive solution on the abrasive cloth, and, in parallel with the polishing, dressing the abrasive cloth by pressing a dresser carrying diamond grains sticked thereto against the abrasive cloth at a second position on the disk.

Abstract: A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

Abstract: The CMP apparatus including a polishing pad having functional groups charged at an opposite polarity to that of the abrasives in the slurry, on its surface is used, so as to eliminate unnecessary Cu film (Cu wiring) and TaN film (barrier metal film) present outside the damascene wiring, by polishing.