Abstract: An EL device comprising a first electrode, an EL layer formed on the first electrode, and a second electrode formed on the EL layer, wherein at least one layer of a material whose wettability changes when light is applied thereto is formed. The invention provides EL devices that can be simply produced, and processes for producing the same.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.

Abstract: A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.

Abstract: A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.

Abstract: An EL device comprising a first electrode, an EL layer formed on the first electrode, and a second electrode formed on the EL layer, wherein at least one layer of a material whose wettability changes when light is applied thereto is formed. The invention provides EL devices that can be simply produced, and processes for producing the same.

Abstract: A thin-film magnetic head includes a spin-valve thin-film magnetic element, first and second insulating layers, and first and second shielding layers. The spin-valve thin-film magnetic element includes a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, an antiferromagnetic layer, a pair of bias layers, and a pair of conductive layers. The pair of conductive layers is located on one side in the thickness direction of the free magnetic layer, and the pair of bias layers is located on the other side in the thickness direction of the free magnetic layer, is disposed on both sides in the track width direction of at least a portion of the second insulating layer, and is in contact with the free magnetic layer.

Abstract: A photoelectric sensor having a photoconductive layer on an electrode and used to form information on an information recording medium. The photoelectric sensor is semiconductive and has such a function that when a voltage is applied between the electrode of the photoelectric sensor and an electrode of the information recording medium while information exposure is being carried out, or when information exposure is carried out with a voltage being applied between the two electrodes, information can be recorded on the information recording medium with an electric current amplified to a level higher than the intensity of a photoelectric current induced by the information exposure, and that even after termination of the information exposure, when the voltage is continuously applied, the photoelectric sensor shows electrical conductivity and continuously effects information recording to the information recording medium.

Abstract: In a photoelectric sensor that enables information to be recorded on an information recording medium at an intensity amplified to a level higher than that of a current induced by information exposure and allows conductivity to remain maintained by a continued application of voltage even after termination of the information exposure, so that information can subsequently be recorded on the information recording medium, a photoconductive layer contains a substance that emits fluorescence in a wavelength region in which a charge generation substance-containing layer absorbs light, so that color images can be well recorded on the information recording medium. Also provided is an information recording system using such a photoelectric sensor.

Abstract: An information recording system including a photoelectric sensor having a semiconductive, photoconductive layer stacked on an electrode, and an information recording medium having an information recording layer stacked on an electrode so that information can be recorded on the information recording layer by an electric field or electric charge. The photoelectric sensor and the information recording medium are disposed to face each other, and information exposure is carried out with a voltage being applied between the two electrodes, thereby enabling information to be recorded on the information recording medium. The photoconductive layer of the photoelectric sensor is capable of amplifying an electric field or electric charge given to the information recording medium, so that the intensity of electric field or the amount of electric charge given to the information recording medium can be increased to a level higher than the light energy actually applied.

Abstract: An information recording system including a photoelectric sensor being semiconductive and having a photoconductive layer stacked on an electrode, and an information recording medium having an information recording layer stacked on an electrode so that information can be recorded on the information recording layer by an electric field or electric charge. The photoelectric sensor and the information recording medium are disposed to face each other, and information exposure is carried out with a voltage being applied between the two electrodes, thereby enabling information to be recorded on the information recording medium. The photoconductive layer of the photoelectric sensor is capable of amplifying an electric field or electric charge given to the information recording medium, so that the intensity of electric field or the amount of electric charge given to the information recording medium can be increased to a level higher than the light energy actually applied.

Abstract: An electrostatic information recording medium according to this invention includes an inorganic oxide layer 3 and a photoconductive layer comprising a charge-generating layer 4 and a charge-transport layer 5 laminated onto an electrode 2 in this sequence, as illustrated in FIG. 1. To record information, the information is exposed to light while voltage is being applied between the electrode 3 and another opposite electrode, or alternatively voltage is applied therebetween while the information is being exposed to light.After information recording, the electrostatic information recording medium is uniformly electrified on its surface as by corona charging, whereby the information can be easily reproduced in the form of electrostatic information. This recording medium, if tone-developed, can be used as an original plate for electrostatic printing.