Abstract: A dome-type camera includes a camera lens capable of rotating in a tilt direction, a dome cover for covering the camera lens, and an aperture control unit for controlling the amount of aperture of the camera lens. The amount of aperture is set to become smaller from an open value toward a closed value in accordance with the tilt angle of the camera lens becoming smaller from a zenith direction of the dome cover toward a horizontal direction. According to this dome-type camera, a desirable low tilt angle image with a reduced blur may be obtained even with a megapixel dome camera.

Abstract: A single-paste, self-adhesive dental curable composition that has strong self-adhesion to biological hard tissues (such as enamel and dentin of teeth) and good color tone adaptability suitable for use for aesthetic restoration is provided. A dental curable composition contains: an inorganic particle (A) with an average grain size in the range of 0.1 to 50 ?m; an inorganic particle (B) with an average grain size in the range of 0.1 to 50 ?m; a polymerizable monomer (C); and a polymerization catalyst (D). The refractive index na of the inorganic particle (A) and the refractive index nb of the inorganic particle (B) meet the relationship of na>nb. A cured resin material (E), which is obtained by curing a polymerizable composition containing the polymerizable monomer (C) and the polymerization catalyst (D), has a refractive index ne that meets the relationship (1): 0?|na?ne|<0.01?ne?nb?0.05??(1).

Abstract: A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated.

Abstract: A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

Abstract: A dome-type camera includes a camera lens capable of rotating in a tilt direction, a dome cover for covering the camera lens, and an aperture control unit for controlling the amount of aperture of the camera lens. The amount of aperture is set to become smaller from an open value toward a closed value in accordance with the tilt angle of the camera lens becoming smaller from a zenith direction of the dome cover toward a horizontal direction. According to this dome-type camera, a desirable low tilt angle image with a reduced blur may be obtained even with a megapixel dome camera.

Abstract: When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

Abstract: Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

Abstract: Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.

Abstract: A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further includes an upper wafer holder being placed to cover an upper surface of each of the plurality of wafers when the plurality of wafer is supported by the boat and including a gas introduction suppression part suppressing an introduction of the reaction gas onto the upper surface of each the plurality of wafers by surrounding each of the plurality of wafers.

Abstract: There are provided a substrate processing apparatus and a method of manufacturing a substrate in which induction heating of members made of a metal material and installed outside an induction coil is suppressed and safety may be improved during processing of a substrate. The substrate processing apparatus includes: a reaction tube for accommodating a substrate; an induction heating unit installed to surround an outer circumference of the reaction tube; a shielding unit installed to surround an outside of the induction heating unit; a gas supply unit for supplying at least a source gas into the reaction tube; and a controller for processing the substrate by heating an inside of the reaction tube using the induction heating unit, and supplying at least the source gas from the gas supply unit into the reaction tube.

Abstract: Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit.

Abstract: A method and system for lithography simulation is disclosed. The method and system specify a subject region of a lithography image with a CD marker, specify a threshold intensity over the lithography image, specify a gradient to a threshold value of the threshold intensity, and calculate a sensitivity or ratio of change of an image boundary of the lithography image to lithography process variation.

Abstract: In a fixing device in which fixing defects can be suppressed and which can be reduced in size, and an image forming apparatus comprising the fixing device, setting is performed such that the surface temperature of an outer peripheral belt surface serving as a non-heated belt surface of a fixing belt is substantially equal at a heating region inlet at the upstream end of a heating region and a heating region outlet at the downstream end of the heating region such that the temperature difference between the surface temperature of the outer peripheral belt surface at the heating region inlet and the surface temperature of the outer peripheral belt surface at the heating region outlet is no more than 5 [° C.].

Abstract: A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).

Abstract: A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of dose intensity change between adjacent writing objects, selecting a writing object that may need accuracy improvement of dose correction based on the rate of dose intensity change, and improving accuracy of the dose correction of the writing object that is selected and its adjacent objects.

Abstract: A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism.

Abstract: A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of dose intensity change between adjacent writing objects, selecting a writing object that may need accuracy improvement of dose correction based on the rate of dose intensity change, and improving accuracy of the dose correction of the writing object that is selected and its adjacent objects.

Abstract: A method and system for lithography simulation is disclosed. The method and system specify a subject region of a lithography image with a CD marker, specify a threshold intensity over the lithography image, specify a gradient to a threshold value of the threshold intensity, and calculate a sensitivity or ratio of change of an image boundary of the lithography image to lithography process variation.

Abstract: A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).

Abstract: In a fixing device in which fixing defects can be suppressed and which can be reduced in size, and an image forming apparatus comprising the fixing device, setting is performed such that the surface temperature of an outer peripheral belt surface serving as a non-heated belt surface of a fixing belt is substantially equal at a heating region inlet at the upstream end of a heating region and a heating region outlet at the downstream end of the heating region such that the temperature difference between the surface temperature of the outer peripheral belt surface at the heating region inlet and the surface temperature of the outer peripheral belt surface at the heating region outlet is no more than 5 [° C.].