Abstract: Provided is a polishing pad having a high following performance even when a surface to be polished is a curved face. A polishing pad (1) in an embodiment of the present invention includes a polishing layer (2) having a polishing face (21) and a support layer (3) that is formed from a material softer than the polishing layer (2) and is fixed to a face (22) opposite to the polishing face (21) of the polishing layer (2). The support layer (3) has a hardness of not less than 30 and less than 70 in terms of F hardness.

Abstract: The present invention relates to light-scattering silica particles having a light scattering property, the light-scattering silica particles including: a plurality of hollow portions each having a closed pore structure inside the particle, in which the light-scattering silica particles have a volume-based cumulative 50% particle diameter of 1 ?m to 500 ?m and an average circularity of 0.80 or more, and in use of the light-scattering silica particles, a reflectance A of a water cake containing 20 mg/cm2 of silica per measurement cross-sectional area at an ultraviolet wavelength of 310 nm is 30% or more.

Abstract: An image forming system includes an image forming apparatus, a fixing device, a varnish image forming apparatus, an image reading portion, and a controller. The controller corrects first image data depending on first detection image data on a toner image formed on a first recording material and read by the image reading portion, and then depending on the corrected first image data, a toner image is formed on a second recording material subsequent to the first recording material. The controller corrects second image data depending on second detection image data on a varnish image read by the image reading portion, and then depending on the corrected second image data, a varnish image is formed on the second recording material.

Abstract: An image forming system includes an image forming apparatus, a varnish applying apparatus, and a controller. A toner image formed on a recording material by the image forming apparatus on the basis of inputted first image data is a first toner image, and an image formed on the recording material by the varnish applying apparatus on the basis of inputted second image data is a varnish image. In a case that the varnish image is formed in a non-image region where the first toner image is not formed, before the varnish image is formed, a second toner image is formed with monochromatic toner by the image forming apparatus on a portion of the non-image region where the varnish image is formed.

Abstract: An image forming system including an image forming apparatus, a varnish applying apparatus, an input unit, a first image processing unit, and a second image processing unit. The image forming apparatus forms a toner image on a recording material on the basis of image data obtained by subjecting first image data to data change processing. The varnish applying apparatus forms a varnish image on the recording material on the basis of image data obtained by subjecting second image data to the data change processing.

Abstract: An image forming system includes an image forming unit, a varnish applying unit, a conveying unit, an irradiation unit, and a controller. The controller controls conveyance of a recording material so that a conveying speed of the recording material in a case that varnish is applied to the recording material with a toner image is formed is slower than a conveying speed of the recording material in a case that varnish is applied to the recording material with no toner image. The controller controls irradiation of the varnish with light so that intensity of the light with which the varnish is irradiated in a case that the varnish is applied to the recording material with the toner image is lower than intensity of the light with which the varnish is irradiated in a case that the varnish is applied to the recording material with no toner image.

Abstract: An image forming system includes an image forming unit including a first photosensitive member, a first developing unit, a second photosensitive member, a second developing unit, a third photosensitive member, a third developing unit, a fourth photosensitive member, and a fourth developing unit, a varnish applying unit; an irradiation unit; and a controller configured to control image formation by the image forming unit to form a black image, on which the varnish is superimposed, with the yellow toner, the magenta toner, and the cyan toner.

Abstract: A manufacturing method that is capable of forming an electrode on any part of a surface of a sintered ceramic body in accordance with a simple approach, and a ceramic electronic component manufactured by the method. The method for manufacturing a ceramic electronic component includes steps of preparing a sintered ceramic body containing a metal oxide, irradiating an electrode formation region on a surface of the ceramic body with a laser to partially lower resistance of the ceramic body, thereby forming a low-resistance portion, and subjecting the ceramic body to plating to deposit a plated metal serving as an electrode on the low-resistance portion, and growing the plated metal to extend over the entire electrode formation region.

Abstract: The present invention relates to a copper powder for additive manufacturing, a method for producing the same, an additive manufactured product, a method for producing the same and the like, and an object of the present invention is to provide a copper powder for additive manufacturing that can sufficiently improve the mechanical strength and electrical conductivity of an additive manufactured product. The means for achieving the above-mentioned object of the present invention is, for example, a copper powder for additive manufacturing having a mean particle size of 1 ?m or more and 150 ?m or less, containing copper oxide in an amount of 0.10 g/m2 or more and 7.0 g/m2 or less per unit surface area and 0.5 mass % or more and 9.4 mass % or less per unit mass.

Abstract: A manufacturing method that is capable of forming an electrode on any part of a surface of a sintered ceramic body in accordance with a simple approach, and a ceramic electronic component manufactured by the method. The method for manufacturing a ceramic electronic component includes steps of preparing a sintered ceramic body containing a metal oxide, irradiating an electrode formation region on a surface of the ceramic body with a laser to partially lower resistance of the ceramic body, thereby forming a low-resistance portion, and subjecting the ceramic body to plating to deposit a plated metal serving as an electrode on the low-resistance portion, and growing the plated metal to extend over the entire electrode formation region.

Abstract: A manufacturing method that is capable of forming an electrode on any part of a surface of a sintered ceramic body in accordance with a simple approach, and a ceramic electronic component manufactured by the method. The method for manufacturing a ceramic electronic component includes steps of preparing a sintered ceramic body containing a metal oxide, irradiating an electrode formation region on a surface of the ceramic body with a laser to partially lower resistance of the ceramic body, thereby forming a low-resistance portion, and subjecting the ceramic body to plating to deposit a plated metal serving as an electrode on the low-resistance portion, and growing the plated metal to extend over the entire electrode formation region.

Abstract: A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.

Abstract: A treatment apparatus includes a feeding device and a laser device. The feeding device includes a feeding rotor and a motor. The feeding rotor is rotatably supported. In the outer peripheral surface of the feeding rotor, a support portion extending in a circumferential direction of the feeding rotor is formed, and holding grooves are formed in the support portion at equal angular intervals. The laser device treats the element body fed to a treatment position. A control device controls the motor so as to stop the feeding rotor at every predetermined angle (an angle at which the holding groove is formed) and to feed the element body to a treatment position. Then, the control device controls the laser device so as to treat a surface of the element body.

Abstract: A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.

Abstract: Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.

Abstract: A manufacturing method that is capable of forming an electrode on any part of a surface of a sintered ceramic body in accordance with a simple approach, and a ceramic electronic component manufactured by the method. The method for manufacturing a ceramic electronic component includes steps of preparing a sintered ceramic body containing a metal oxide, irradiating an electrode formation region on a surface of the ceramic body with a laser to partially lower resistance of the ceramic body, thereby forming a low-resistance portion, and subjecting the ceramic body to plating to deposit a plated metal serving as an electrode on the low-resistance portion, and growing the plated metal to extend over the entire electrode formation region.

Abstract: Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.

Abstract: A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container.

Abstract: A heat generating component (3) is mounted on one surface of a circuit board (2). A heat release member (4) is disposed between the one surface and an opposite wall (12) of a housing (1). The heat release member (4) has a plate (41) that extends in a specified direction and is in contact with the heat generating component (3), and fins (42) that project from the plate (41) toward the opposite wall (12). In a region of the opposite wall (12) of the housing overlapping with the heat release member (4), an air inlet (1c) is provided so as to extend in the specified direction. The heat release member (4) is, at both end portions thereof in the specified direction, in contact with the opposite wall (12) via heat-conductive spacers (9), and a gap (8) is formed between the fins (42) and the opposite wall (12).

Abstract: A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as SinH2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.